公开(公告)号：US09351081B2

公开(公告)日：2016-05-24

申请号：US13779210

申请日：2013-02-27

Applicant: Texas Instruments Incorporated

Inventor： Peter B Johnson ,  Ira Oaktree Wygant

IPC: H02N1/00 ,  H04R19/00 ,  B06B1/02

CPC classification number: B06B1/0292 ,  B06B2201/76 ,  B81B7/007 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/036 ,  H02N1/006 ,  H04R19/005 ,  H05K2201/09845 ,  H05K2201/09863

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate of a single crystal material having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region, and a through-substrate via (TSV) extending a full thickness of the first substrate. The TSV is formed of the single crystal material, is electrically isolated by isolation regions in the single crystal material, and is positioned under a top side contact area of the first substrate. A membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A metal layer is over the top side substrate contact area and over the movable membrane including coupling of the top side substrate contact area to the movable membrane.

Abstract translation: 电容式微加工超声波传感器（CMUT）装置包括至少一个CMUT单元，其包括单晶材料的第一基板，其具有包括厚和薄的电介质区域的在其上的图案化电介质层的顶侧，以及贯穿基板通孔 TSV）延伸第一基板的整个厚度。 TSV由单晶材料形成，通过单晶材料中的隔离区电隔离，并且位于第一基板的顶侧接触区域的下方。 膜层结合到厚电介质区域和薄介电区域上，以在微机电系统（MEMS）腔体上提供可移动膜。 金属层在顶侧基板接触区域上方并且在可移动膜上方，包括顶侧基板接触区域与可动膜的耦合。