公开(公告)号：US08795488B2

公开(公告)日：2014-08-05

申请号：US13048440

申请日：2011-03-15

Applicant: Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

Inventor： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

IPC: C23C14/40

CPC classification number: H01J37/3405 ,  H01J37/3411

Abstract: In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

Abstract translation: 在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口 从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

公开(公告)号：US20120027954A1

公开(公告)日：2012-02-02

申请号：US13189992

申请日：2011-07-25

Applicant: ZHENDONG LIU ,  YONG CAO ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  THANH NGUYEN ,  MUHAMMAD RASHEED

Inventor： ZHENDONG LIU ,  YONG CAO ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  THANH NGUYEN ,  MUHAMMAD RASHEED

IPC: C23C14/35

CPC classification number: H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461 ,  H01J2237/3323

Abstract: Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed.

Abstract translation: 本文提供了用于沉积具有高厚度均匀性和低电阻率的薄膜的方法和设备。 在一些实施例中，磁控管组件包括分流板，可绕轴线旋转的分流板，耦合到分流板的内部闭环磁极和耦合分流板的外部闭环磁极，其中， 外部闭环磁极的磁场强度与内部闭环磁极的磁场强度小于约1.在一些实施例中，该比率为约0.57。 在一些实施例中，并联板和外闭环磁极具有心形形状。 还公开了一种利用RF和DC电力与本发明的磁控管组合的方法。

公开(公告)号：US20110311735A1

公开(公告)日：2011-12-22

申请号：US13163817

申请日：2011-06-20

Applicant: RONGJUN WANG ,  SALLY LOU ,  MUHAMMAD RASHEED ,  JIANXIN LEI ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  RYAN HANSON ,  TZA-JING GUNG ,  KEITH A. MILLER ,  THANH X. NGUYEN

Inventor： RONGJUN WANG ,  SALLY LOU ,  MUHAMMAD RASHEED ,  JIANXIN LEI ,  XIANMIN TANG ,  SRINIVAS GANDIKOTA ,  RYAN HANSON ,  TZA-JING GUNG ,  KEITH A. MILLER ,  THANH X. NGUYEN

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/345 ,  H01J37/3461

Abstract: Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.

Abstract translation: 本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。 在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路 环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化 弧。 在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。

公开(公告)号：US07848076B2

公开(公告)日：2010-12-07

申请号：US11888311

申请日：2007-07-31

Applicant: Kadthala Ramaya Narendranath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Goodhalekar ,  Muhammad Rasheed ,  Tony Kaushal

Inventor： Kadthala Ramaya Narendranath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Goodhalekar ,  Muhammad Rasheed ,  Tony Kaushal

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

Abstract: A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

Abstract translation: 一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。 一个实施例包括板和电介质部件，其中介电部件插入板中。 板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。 形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。 在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

公开(公告)号：US07572647B2

公开(公告)日：2009-08-11

申请号：US11670728

申请日：2007-02-02

Applicant: Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

Inventor： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

IPC: H01L21/00

CPC classification number: C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31604 ,  H01L21/31608

Abstract: A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

Abstract translation: 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

公开(公告)号：US20080041821A1

公开(公告)日：2008-02-21

申请号：US11877502

申请日：2007-10-23

Applicant: Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana Gujer

Inventor： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana Gujer

IPC: C23F1/00

CPC classification number: C23C16/4558

Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

Abstract translation: 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

公开(公告)号：US07141138B2

公开(公告)日：2006-11-28

申请号：US10630989

申请日：2003-07-28

Applicant: Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

Inventor： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC: H01L21/306 ,  C23C16/00 ,  C23F1/00

CPC classification number: H01L21/67017 ,  H01L21/67109

Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

公开(公告)号：US20060225648A1

公开(公告)日：2006-10-12

申请号：US11422212

申请日：2006-06-05

Applicant: Muhammad Rasheed ,  Steven Kim

Inventor： Muhammad Rasheed ,  Steven Kim

IPC: B05C11/00

CPC classification number: C23C16/4412 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

Abstract: High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such low-mass fluent gases permits pressures to be maintained at relatively low levels in a substrate processing chamber, thereby improving the gapfill characteristics.

Abstract translation: 在HDP-CVD工艺中使用高流量的低质量流动气体用于氧化硅膜的间隙填充。 为这种低质量流动气体提供大的压缩比的增强的涡轮分子泵允许在衬底处理室中保持相对较低水平的压力，从而提高间隙填充特性。

公开(公告)号：US09834840B2

公开(公告)日：2017-12-05

申请号：US13106392

申请日：2011-05-12

Applicant: Muhammad Rasheed ,  Rongjun Wang ,  Zhendong Liu ,  Xinyu Fu ,  Xianmin Tang

Inventor： Muhammad Rasheed ,  Rongjun Wang ,  Zhendong Liu ,  Xinyu Fu ,  Xianmin Tang

IPC: C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/35 ,  C23C14/564 ,  H01J37/32853 ,  H01J37/32871 ,  H01J37/34 ,  H01J37/3411

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

公开(公告)号：US20130256125A1

公开(公告)日：2013-10-03

申请号：US13435949

申请日：2012-03-30

Applicant: DONNY YOUNG ,  ALAN RITCHIE ,  UDAY PAI ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

Inventor： DONNY YOUNG ,  ALAN RITCHIE ,  UDAY PAI ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

IPC: C23C14/34 ,  C23C14/35

CPC classification number: C23C14/3407 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3435

Abstract: Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

Abstract translation: 本文提供基板处理系统。 在一些实施例中，衬底处理系统可以包括目标组件，其具有包含待沉积在衬底上的源材料的靶; 设置在所述目标组件周围并且具有大致平行于所述目标组件的背面并相对于所述目标组件的后侧的第一表面的接地组件; 联接到所述接地组件以将所述目标组件支撑在所述接地组件内的支撑构件; 设置在目标组件的背面与接地组件的第一表面之间的一个或多个绝缘体; 以及设置在接地组件的第一表面和目标组件的后侧之间的一个或多个偏置元件，以将目标组件朝向支撑构件偏压。