Abstract:
Techniques for using ferroelectric liquid crystals Dammann grating (FLCDG) for light detection and ranging devices are disclosed. In LiDAR devices, accuracy, response time, and cost performance can be limited by some factors, such as laser pulse width, time resolution of a time-to-digital conversion chip, detector bandwidth, shot noise, and time error generated by electronic circuits. A FLCDG-based architecture can improve a LiDAR device, and provide for one-shot capturing due to the high switching speed at very low driving voltage provided by ferroelectric liquid crystals and the equal diffracting ability of Dammann grating.
Abstract:
A method for fabricating quantum rods includes: preparing a Cd-precursor; preparing a S-precursor and CdSe seeds; preparing a Zn-precursor; mixing the S-precursor and the CdSe seeds with the Cd-precursor in a reaction mixture; adding the Zn-precursor to the reaction mixture; stopping the reaction; and performing a purification process to obtain the quantum rods.
Abstract:
A method of fabricating a hybrid organic-inorganic halide perovskite film includes depositing a precursor layer onto a substrate, the precursor layer comprising metal halide, placing an organic source-material layer onto a boat, the organic source-material layer comprising an organic cation, and annealing the precursor layer and the organic source-material layer in a vacuum chamber enclosed in a constrained volume.
Abstract:
An apparatus is provided that includes a substrate and source and drain regions within an annealed active layer having resulted from an annealing of an active layer comprising metal-oxide and formed on the substrate, and an impermeable layer over the source and drain regions of the annealed active layer, wherein the annealing resulting in the annealed active layer was performed with the impermeable layer over portions of the active layer corresponding to the source and drain regions, thereby resulting in a reduction of a resistivity of the source and drain regions of the annealed active layer relative to the active layer. In another aspect, a junctionless transistor is provided wherein the entire active area has a low resistivity based on annealing of an active layer including metal oxide while uncovered or at least partially covered with layers of various gas permeability under oxidizing or non-oxidizing conditions.
Abstract:
The present invention provides a patterned polarization converter having multiple domains that can be used to convert input linear polarized light to output light with spatially varying polarization states, including domains that produce linearly polarized light and domains that produce circular polarized light based on the patterning of the domains. A patterned polarization converter having multiple domains may be used in a polarization sensor application capable of detecting the polarization state of input light. The present invention further provides patterned radial and azimuthal polarization converters, which have utility in applications such as optical tweezers. Additionally, patterned polarization converters may be used to fabricate more patterned polarization converters having the same pattern using one-step photoalignment to copy the pattern of an existing patterned polarization converter to an unpatterned photoalignment layer.
Abstract:
A field sequential color (FSC) ferroelectric liquid crystal (FLC) display cell, part of an FSC display, is provided. The FSC FLC display cell includes: two polarizers; an FLC layer, positioned between the two polarizers, the FLC layer comprising FLCs with helix pitch less than the thickness of the FLC layer; and a voltage source, configured to apply an electrical driving voltage to the FLC layer, the electrical driving voltage applied to the FLC layer having an amplitude greater than a threshold voltage for helix unwinding, and wherein the voltage source is further configured to apply electrical driving voltages to light emitting diodes (LEDs) of the FSC display to illuminate pixels of the FSC display. The pixels are illuminated in an FSC manner. The FLC layer is configured to provide a defect-free layer of FLC under the electrical driving voltage applied to the FLC layer.
Abstract:
A low birefringence ferroelectric liquid crystal (FLC) mixture composed of at least two components shows birefringence in the range 0.05 to 0.14, which is suitable for the modern display and photonic devices. The cell gap can be tuned from 1.5 μm to 4 μm to reduces the fabrication complexity and chromatic distortion by electro-optical modulation. The FLC mixtures can be employed in a wide temperature range. The characteristics of the said FLC mixture can be tuned by tuning the concentration of the constituents of the mixture. The helical pitch of the FLC mixtures can be varied from 100 nm to 10 μm. A smectic tilt angle can be varied between 17° to 45° and the spontaneous polarization can be tuned over a wide range to meet requirements of different electro-optical modes, and the FLC mixture is applicable for a wide variety of electro-optical effects.
Abstract:
Systems and methods for driving a pixel of a liquid crystal pixel array with a driving circuit are provided. An exemplary method includes: providing a data signal (Dm) to a storage element via the first transistor (T1); and providing a ramping voltage signal (VRAMP) to a gate of a second transistor (T2) of the driving circuit to control the on-off status of the second transistor (T2); wherein the ramping voltage signal (VRAMP) is based on data stored at the storage element; and wherein a duration of an on-state of the second transistor (T2) corresponds to a transmitting state for the pixel.
Abstract:
This disclosure relates generally to the three-dimensional (3D) integrated thin-film transistors (TFTs) with silicon and metal-oxide (MO) semiconductors as the active layers. In one or more embodiments, an apparatus is provided that comprises a first transistor comprising a silicon active layer, and a second transistor comprising a metal oxide active layer. The second transistor is vertically stacked on the first transistor, and the first transistor and the second transistor share a gate electrode formed between the silicon active layer and the metal oxide active layer. With these embodiments, the gate electrode corresponds to a top gate of the first transistor and a bottom gate of the second transistor.
Abstract:
A polarization converter and polarization conversion systems are provided. The polarization converter and polarization conversion systems include a patterned polarization grating with left hand and right hand polarization grating domains. The polarization grating domains are configured to diffract incident non-polarized light into beams having left and right circular polarization states.