公开(公告)号：US20250046617A1

公开(公告)日：2025-02-06

申请号：US18362608

申请日：2023-07-31

Applicant: Tokyo Electron Limited

Inventor： Adam Pranda ,  Yusuke Yoshida ,  Aelan Mosden ,  Yun Han

IPC: H01L21/311 ,  H01J37/32 ,  H01L29/66

Abstract: A method of processing a substrate that includes: forming a bottom passivation layer including an oxide over a first portion of a dielectric layer at a bottom of a recess of the substrate, the recess having sidewalls including a second portion of the dielectric layer; and performing a lateral etch to etch the second portion of the dielectric layer, the bottom passivation layer covering the first portion of the dielectric layer during the lateral etch, and where the forming of the bottom passivation layer includes exposing the substrate to a first plasma including a halogen, and exposing the substrate to a second plasma including oxygen to form the bottom passivation layer.

公开(公告)号：US20240379372A1

公开(公告)日：2024-11-14

申请号：US18619628

申请日：2024-03-28

Applicant: Tokyo Electron Limited

Inventor： Adam Pranda ,  Christopher Catano ,  Yusuke Lent-Yoshida ,  Aelan Mosden ,  Yun Han ,  Ken Kobayashi

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L29/06 ,  H01L29/66

Abstract: A method for forming a semiconductor device can include providing a substrate having a patterned structure comprising semiconductor materials, where the patterned structure has a side profile including indentations, such as a patterned film stack, and where a spacer layer is conformally deposited over the patterned structure and within the indentations, reacting a surface of the spacer layer with a plasma-excited first etch gas to form a reacted layer on the spacer layer, wherein the plasma-excited first etch gas includes fluorine, hydrogen, and nitrogen, and removing at least part of the reacted layer by ion bombardment from exposure to a plasma-excited second etch gas. The spacer layer can be SiOCN. The reacted layer can be ammonium fluorosilicate. The first etch gas can contain SF6, H2, and N2, or NF3, H2, and N2. The reacting and removing can be done at room temperature in a same chamber.