公开(公告)号：US11854843B2

公开(公告)日：2023-12-26

申请号：US17892396

申请日：2022-08-22

Applicant: Tokyo Electron Limited

Inventor： Hajime Tamura

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/683

CPC classification number: H01L21/67109 ,  H01L21/68785 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6875

Abstract: A substrate stage includes: a base portion having a mounting surface; an annular support configured to support a substrate; an annular partition wall configured to divide the mounting surface into an outer region and an inner region in a radial direction of the substrate; a plurality of protrusions provided on the mounting surface and configured to support the substrate with a gap left between an upper end surface of the partition wall and the substrate; an outer flow path in communication with the outer region, and configured to allow a heat transfer gas supplied to a space between the substrate and the mounting surface to flow therethrough; an inner flow path in communication with the inner region, and configured to allow the heat transfer gas to flow therethrough; and an annular diffusion portion configured to diffuse the heat transfer gas along a circumferential direction of the partition wall.

公开(公告)号：US11587769B2

公开(公告)日：2023-02-21

申请号：US17381698

申请日：2021-07-21

Applicant: Tokyo Electron Limited ,  TOKYO KEIKI INC.

Inventor： Yohei Ishida ,  Kazushi Kaneko ,  Hajime Tamura ,  Koichi Murai

IPC: H01J37/32

Abstract: A device includes a microwave generator configured to generate a microwave having a bandwidth, an output unit, a directional coupler and a measurer. The microwave generator generates a microwave a power of which is pulse-modulated to be a High level and a Low level. A set carrier pitch is set to satisfy a preset condition. The preset condition includes a condition that a value obtained by dividing a set pulse frequency by the set carrier pitch or a value obtained by dividing the set carrier pitch by the set pulse frequency is not an integer and a condition that an ON-time of the High level is equal to or larger than 50%. The microwave generator averages a first High measurement value and a first Low measurement value in a preset moving average time longer than a sum of the ON-time of the High level at a preset sampling interval.

公开(公告)号：US11450538B2

公开(公告)日：2022-09-20

申请号：US16922172

申请日：2020-07-07

Applicant: Tokyo Electron Limited

Inventor： Hajime Tamura

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/683

Abstract: A substrate stage includes: a base portion having a mounting surface; an annular support configured to support a substrate; an annular partition wall configured to divide the mounting surface into an outer region and an inner region in a radial direction of the substrate; a plurality of protrusions provided on the mounting surface and configured to support the substrate with a gap left between an upper end surface of the partition wall and the substrate; an outer flow path in communication with the outer region, and configured to allow a heat transfer gas supplied to a space between the substrate and the mounting surface to flow therethrough; an inner flow path in communication with the inner region, and configured to allow the heat transfer gas to flow therethrough; and an annular diffusion portion configured to diffuse the heat transfer gas along a circumferential direction of the partition wall.

公开(公告)号：US11437223B2

公开(公告)日：2022-09-06

申请号：US16905470

申请日：2020-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu Sasaki ,  Tsuguto Sugawara ,  Shin Yamaguchi ,  Hajime Tamura

IPC: H01J37/32 ,  H01L21/683

Abstract: A stage includes an electrostatic chuck that supports a substrate and an edge ring; and a base that supports the electrostatic chuck. The electrostatic chuck includes a first region having a first upper surface and supports the substrate placed on the first upper surface; a second region having a second upper surface, provided integrally around the first region, and supports the edge ring placed on the second upper surface; a first electrode provided in the first region to apply a DC voltage; a second electrode provided in the second region to apply a DC voltage, and a third electrode to apply a bias power.

公开(公告)号：US12293903B2

公开(公告)日：2025-05-06

申请号：US18582329

申请日：2024-02-20

Applicant: Tokyo Electron Limited

Inventor： Hajime Tamura ,  Yasuharu Sasaki ,  Shin Yamaguchi ,  Tsuguto Sugawara ,  Katsuyuki Koizumi

IPC: H01J37/32 ,  H02N13/00

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

公开(公告)号：US12272528B2

公开(公告)日：2025-04-08

申请号：US18415667

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Yasuharu Sasaki ,  Tsuguto Sugawara ,  Shin Yamaguchi ,  Hajime Tamura

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

公开(公告)号：US12198906B2

公开(公告)日：2025-01-14

申请号：US17036943

申请日：2020-09-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hajime Tamura

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: A substrate support includes a substrate supporting surface, an electrode, a power supply line, and a power supply terminal. The electrode is disposed below the substrate supporting surface and configured to provide a bias power. The power supply line is disposed below the electrode and configured to apply the bias power to the electrode. The power supply terminal is configured to electrically couple the electrode and the power supply line. Further, an area of a surface of the power supply terminal that is coupled to the electrode is greater than an area of a surface of the power supply terminal that is coupled to the power supply line.

公开(公告)号：US11935729B2

公开(公告)日：2024-03-19

申请号：US17190178

申请日：2021-03-02

Applicant: Tokyo Electron Limited

Inventor： Hajime Tamura ,  Yasuharu Sasaki ,  Shin Yamaguchi ,  Tsuguto Sugawara ,  Katsuyuki Koizumi

IPC: H01J37/32 ,  H02N13/00

CPC classification number: H01J37/32715 ,  H01J37/32082 ,  H01J37/32642 ,  H02N13/00 ,  H01J2237/2007 ,  H01J2237/334

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

公开(公告)号：US11908666B2

公开(公告)日：2024-02-20

申请号：US17883264

申请日：2022-08-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu Sasaki ,  Tsuguto Sugawara ,  Shin Yamaguchi ,  Hajime Tamura

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32715 ,  H01J37/3255 ,  H01J37/32091 ,  H01J37/32211 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68721

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

公开(公告)号：US20220384155A1

公开(公告)日：2022-12-01

申请号：US17883264

申请日：2022-08-08

Applicant: Tokyo Electron Limited

Inventor： Yasuharu SASAKI ,  Tsuguto Sugawara ,  Shin Yamaguchi ,  Hajime Tamura

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.