Harmonic multiplexer
    1.
    发明申请
    Harmonic multiplexer 有权
    谐波多路复用器

    公开(公告)号:US20040065539A1

    公开(公告)日:2004-04-08

    申请号:US10644063

    申请日:2003-08-20

    Inventor: Janusz Sosnowski

    CPC classification number: H01J37/32174 H01J37/32082 H05H1/46

    Abstract: A method and apparatus for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The energy components at frequencies that are harmonics of the fundamental frequency are monitored and controlled by placing a harmonic multiplexer containing a matching network and RF filter elements in energy receiving communication with the plasma.

    Abstract translation: 一种用于通过将等离子体区域的基本频率的RF功率与气体一起提供以维持等离子体区域中的等离子体的方法和装置,以产生与气体相互作用的RF电磁场,以产生含有电磁能的等离子体 频率为基频谐波的分量。 通过将包含匹配网络和RF滤波器元件的谐波多路复用器与等离子体进行能量接收通信来监视和控制基频谐波频率处的能量分量。

    Inductively coupled plasma source for improved process uniformity
    2.
    发明申请
    Inductively coupled plasma source for improved process uniformity 审中-公开
    电感耦合等离子体源,提高工艺均匀性

    公开(公告)号:US20030087488A1

    公开(公告)日:2003-05-08

    申请号:US10289389

    申请日:2002-11-07

    CPC classification number: H01J37/321

    Abstract: An improved apparatus for material processing, wherein the improved apparatus including a plasma processing system to process a substrate, the plasma processing system including a process chamber, a substrate holder, and a plasma source. The plasma source further includes an inductive coil assembly for inductively coupling RF power to plasma wherein the inductive coil assembly is arranged within a process chamber. The inductive coil assembly includes an inner conductor, a slotted outer conductor, and a dielectric layer. The inductive coil assembly can further include a second dielectric layer in order to protect the slotted outer conductor from plasma. The inner conductor is surrounded by the slotted outer conductor and, between which, resides the first dielectric layer. The second dielectric layer encapsulates the inner conductor, first dielectric layer and the slotted outer conductor.

    Abstract translation: 一种用于材料加工的改进的装置,其中所述改进的装置包括用于处理衬底的等离子体处理系统,所述等离子体处理系统包括处理室,衬底保持器和等离子体源。 等离子体源还包括用于将RF功率感应耦合到等离子体的感应线圈组件,其中感应线圈组件布置在处理室内。 感应线圈组件包括内部导体,开槽外部导体和介电层。 感应线圈组件还可以包括第二电介质层,以便保护开槽的外导体不受等离子体的影响。 内部导体被开槽的外部导体包围,其间位于第一介电层之间。 第二电介质层封装内导体,第一电介质层和开槽的外导体。

Patent Agency Ranking