公开(公告)号：US20240222085A1

公开(公告)日：2024-07-04

申请号：US18605902

申请日：2024-03-15

Applicant: Tokyo Electron Limited

Inventor： Koichiro NAKAMURA ,  Norihisa KIYOFUJI

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32174 ,  H01J37/32238 ,  H01J2237/327 ,  H01J2237/335

Abstract: A plasma processing method is implementable with a plasma processing apparatus. The plasma processing method includes applying a voltage to a lower electrode in a substrate support with a gas being supplied into a chamber in the plasma processing apparatus. The substrate support is located in the chamber. The plasma processing method further includes generating plasma by providing a radio-frequency wave after application of the voltage to the lower electrode is started. In the method, the applying of the voltage and the generating of the plasma are performed without an object on a substrate support surface of the substrate support.