公开(公告)号：US20240248417A1

公开(公告)日：2024-07-25

申请号：US18412739

申请日：2024-01-15

Applicant: Tokyo Electron Limited

Inventor： Yoji SAKATA ,  Shingo KATSUKI ,  Ryohei FUJISE ,  Kenichirou MATSUYAMA ,  Shinsuke TAKAKI ,  Hiroyuki IWAKI ,  Hiroki TADATOMO ,  Tomoya ONITSUKA

IPC: G03F7/00

CPC classification number: G03F7/70866 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70808

Abstract: A substrate processing apparatus includes a first transfer path that is a transfer path for a substrate after MOR film formation and before exposure, and a second transfer path that is a transfer path for the substrate after exposure; and one or a plurality of nitrogen atmosphere placement stages provided on at least one of the first transfer path and the second transfer path and configured to place the substrate in an environment with a nitrogen concentration of an atmosphere set higher than that of air.

公开(公告)号：US20240402609A1

公开(公告)日：2024-12-05

申请号：US18673751

申请日：2024-05-24

Applicant: Tokyo Electron Limited

Inventor： Kenji IIZUKA ,  Koji USHIMARU ,  Kazuhiko OOSHIMA ,  Kei MIYAZAKI ,  Yuichi TERASHITA ,  Yukinobu OTSUKA ,  Katsuhiro IKEDA ,  Ryohei FUJISE

IPC: G03F7/36 ,  G03F7/00

Abstract: A developing apparatus for developing a substrate having a coating film of a metal-containing resist formed thereon, includes: a heating part configured to support and heat the substrate; a chamber configured to cover the heating part and form a treatment space above the heating part; a gas supplier to which a developing gas containing acid is supplied; and a dispersion mechanism configured to disperse the developing gas supplied to the gas supplier and discharge the developing gas to the treatment space from a plurality of discharge ports formed at positions above the heating part.

公开(公告)号：US20240030049A1

公开(公告)日：2024-01-25

申请号：US18375958

申请日：2023-10-02

Applicant: Tokyo Electron Limited

Inventor： Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Yasuhiro KUGA ,  Koji USHIMARU ,  Ryohei FUJISE

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  F27B17/00 ,  G03F7/16 ,  F27D3/00 ,  H05B3/22 ,  H05B1/02 ,  F27D5/00

CPC classification number: H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  F27B17/0025 ,  G03F7/168 ,  F27D3/0084 ,  H05B3/22 ,  H05B1/0233 ,  F27D5/0037 ,  F27B17/0083

Abstract: A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.

公开(公告)号：US20210118707A1

公开(公告)日：2021-04-22

申请号：US17072457

申请日：2020-10-16

Applicant: Tokyo Electron Limited

Inventor： Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Yasuhiro KUGA ,  Koji USHIMARU ,  Ryohei FUJISE

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  F27B17/00 ,  F27D3/00 ,  H05B3/22 ,  H05B1/02 ,  F27D5/00 ,  G03F7/16

Abstract: A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.