公开(公告)号：US20180019107A1

公开(公告)日：2018-01-18

申请号：US15642517

申请日：2017-07-06

Applicant: Tokyo Electron Limited

Inventor： Shigeru ISHIZAWA

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32807 ,  B08B7/0035 ,  H01J37/32642 ,  H01J37/32862

Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

公开(公告)号：US20160284577A1

公开(公告)日：2016-09-29

申请号：US15068759

申请日：2016-03-14

Applicant: Tokyo Electron Limited

Inventor： Shigeru ISHIZAWA

IPC: H01L21/67 ,  H01L21/677

Abstract: A substrate transfer method of a substrate processing apparatus that includes a load lock chamber including a drive unit that is capable of forming, between a first opening at an atmospheric side and a second opening connected to a transfer chamber of a housing of the load lock chamber, each of a first space in which a single substrate is capable of being transferred, and a second space in which a plurality of substrates are capable of being transferred, the substrate transfer method including selecting either of the first space or the second space of the load lock chamber in accordance with process statuses of substrates at a plurality of processing chambers, and controlling the drive unit based on the selected result to form either of the first space or the second space.

Abstract translation: 一种基板处理装置的基板转印方法，该基板处理装置包括负载锁定室，所述载荷锁定室包括驱动单元，所述驱动单元能够在大气压侧的第一开口与连接到所述载荷锁定室的壳体的输送室的第二开口 其中单个衬底能够被转移的第一空间和能够被转移多个衬底的第二空间，所述衬底传送方法包括选择所述第一空间或第二空间中的任一个， 负载锁定室，根据多个处理室中的基板的过程状态，并且基于所选择的结果来控制驱动单元以形成第一空间或第二空间。

公开(公告)号：US20230282461A1

公开(公告)日：2023-09-07

申请号：US18196443

申请日：2023-05-12

Applicant: Tokyo Electron Limited

Inventor： Shigeru ISHIZAWA

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32807 ,  H01J37/32899 ,  B08B7/0035 ,  H01J37/32642 ,  H01J37/32862

Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

公开(公告)号：US20190122870A1

公开(公告)日：2019-04-25

申请号：US16223678

申请日：2018-12-18

Applicant: Tokyo Electron Limited

Inventor： Shigeru ISHIZAWA

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing system includes a plasma processing apparatus, a transfer device, and a processor configured to perform a process that includes removing deposits on a wall of a process chamber of the plasma processing apparatus, on a substrate mounting surface of a mount table of the process chamber, and on a first focus ring on a focus-ring mounting surface of the mount table; after removing the deposits, transferring the first focus ring out of the process chamber without opening the process chamber to atmosphere; cleaning the focus-ring mounting surface after the first focus ring is transferred out of the process chamber and before a second focus ring is transferred into the process chamber; and transferring the second focus ring into the process chamber and placing the second focus ring on the focus-ring mounting surface without opening the process chamber to the atmosphere.

公开(公告)号：US20230282460A1

公开(公告)日：2023-09-07

申请号：US18196438

申请日：2023-05-12

Applicant: Tokyo Electron Limited

Inventor： Shigeru ISHIZAWA

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32807 ,  B08B7/0035 ,  H01J37/32642 ,  H01J37/32862 ,  H01J37/32899

Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

公开(公告)号：US20200035470A1

公开(公告)日：2020-01-30

申请号：US16594277

申请日：2019-10-07

Applicant: Tokyo Electron Limited

Inventor： Shigeru ISHIZAWA

IPC: H01J37/32 ,  B08B7/00

Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

公开(公告)号：US20200035471A1

公开(公告)日：2020-01-30

申请号：US16594422

申请日：2019-10-07

Applicant: Tokyo Electron Limited

Inventor： Shigeru ISHIZAWA

IPC: H01J37/32 ,  B08B7/00

Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

公开(公告)号：US20180061692A1

公开(公告)日：2018-03-01

申请号：US15687649

申请日：2017-08-28

Applicant: Tokyo Electron Limited

Inventor： Toru NISHINO ,  Kiyohito IIJIMA ,  Shigeru ISHIZAWA

IPC: H01L21/67 ,  H01L21/677 ,  G05B19/418

CPC classification number: H01L21/67294 ,  B65G2201/0297 ,  G05B19/41865 ,  G05B19/4189 ,  G05B2219/31276 ,  G05B2219/32173 ,  G05B2219/32174 ,  G05B2219/45031 ,  H01L21/67069 ,  H01L21/67173 ,  H01L21/67248 ,  H01L21/67265 ,  H01L21/67276 ,  H01L21/67727 ,  H01L21/6773 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67769 ,  H01L21/67772 ,  H01L21/67775 ,  Y02P90/28 ,  Y10S134/902 ,  Y10S414/14

Abstract: A substrate processing method is provided. The substrate processing method includes placing a substrate storage container storing a substrate on a load port; automatically determining a type of the substrate stored in the placed substrate storage container; and, by referring to a storage unit that stores parameter data set related to a transport condition for each type of substrate, controlling transport of the substrate stored in the substrate storage container based on the parameter data set corresponding to the automatically determined substrate type to process the substrate.