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公开(公告)号：US12176224B2
公开(公告)日：2024-12-24
申请号：US18706425
申请日：2022-09-30
Applicant: Tokyo Electron Limited
Inventor： Kazuhiro Aiura , Yoshifumi Amano
IPC: H01L21/67 , H01L21/306
Abstract: A substrate processing apparatus includes: a substrate rotator configured to hold and rotate a substrate; an outer cup configured to annularly cover a periphery of the substrate held by the substrate rotator; an inner cup disposed inside the outer cup and under the substrate held by the substrate rotator; an annular drain formed between the outer cup and the inner cup to discharge a processing liquid supplied to the substrate outward; and an exhaust passage formed inside the inner cup, wherein the inner cup has an exhaust hole through which a liquid reception space, which is formed by the inner cup and the outer cup, and the exhaust passage are in communication with each other, and the exhaust hole is formed obliquely downward from an outer surface to an inner surface of the inner cup.
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公开(公告)号：US12142496B2
公开(公告)日：2024-11-12
申请号：US15930561
申请日：2020-05-13
Applicant: Tokyo Electron Limited
Inventor： Yoshifumi Amano , Kazuhiro Aiura
Abstract: A substrate processing apparatus includes a holder, a nozzle arm and a position adjusting device. The holder is configured to hold a substrate. The nozzle arm has a nozzle configured to supply a processing liquid to a peripheral portion of the substrate. The position adjusting device is provided at the nozzle arm and is configured to adjust a position of the substrate to a given position on the holder.
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公开(公告)号：US11437252B2
公开(公告)日：2022-09-06
申请号：US16890332
申请日：2020-06-02
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiromitsu Namba , Fitrianto , Yoichi Tokunaga , Yoshifumi Amano
IPC: H01L21/67 , H01L21/306 , H01L21/02 , H01L21/3213 , H01L21/683
Abstract: A substrate processing apparatus includes a substrate holder that holds a substrate in a horizontal direction; a rotation driver that rotates the substrate holder; a first processing liquid nozzle that supplies a first processing liquid to a peripheral portion of the substrate; a first gas supply source that supplies a first gas at a first temperature to the peripheral portion of the substrate; and a second gas supply source that supplies a second gas at a second temperature to an inner side of the substrate in a radial direction. The first gas supply source includes a heater that heats the first gas into the first temperature, and a first gas ejection port that supplies the first gas heated by the heater through a conduit, and the second gas supply source includes a second gas ejection port that supplies the second gas through a gas supply pipe.
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公开(公告)号：US11069546B2
公开(公告)日：2021-07-20
申请号：US15090655
申请日：2016-04-05
Applicant: Tokyo Electron Limited
Inventor： Yoshifumi Amano
IPC: H01L21/67 , H01L21/687 , H01L21/677 , H01L21/673 , H01L21/683 , B08B1/00 , B08B11/02
Abstract: A substrate processing system includes a first processing block, a second processing block, and a reversing device. The first processing block includes a first processing unit configured to perform a process on a substrate with a first surface of the substrate facing upward, and a first transfer device configured to carry the substrate into/from the first processing unit. The second processing block includes a second processing unit configured to perform a process on the substrate with a second surface of the substrate, which is opposite to the first surface, facing upward, and a second transfer device configured to carry the substrate into/from the second processing unit. The reversing device is provided on a transfer path of the substrate from the first processing block to the second processing block, and is configured to reverse the substrate.
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公开(公告)号：US11011436B2
公开(公告)日：2021-05-18
申请号：US15454269
申请日：2017-03-09
Applicant: Tokyo Electron Limited
Inventor： Yoshifumi Amano , Satoshi Morita , Ryoji Ikebe , Isamu Miyamoto
Abstract: Whether a film on a peripheral portion of a substrate is appropriately removed is rapidly determined without depending on a kind of the film on the peripheral portion to be removed. An acquisition process S502 of acquiring information upon the kind of the film of the substrate; a selection process S503 of selecting a measurement setting corresponding to the acquired kind of the film from a table for measurement settings previously stored in a storage unit; a control process S504 of controlling an imaging unit 270 to image the peripheral portion of the substrate by using the measurement setting selected in the selection process are provided.
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Patent Agency Ranking
公开(公告)号：US10128137B2
公开(公告)日：2018-11-13
申请号：US15454346
申请日：2017-03-09
Applicant: Tokyo Electron Limited
Inventor： Yoshifumi Amano , Satoshi Morita , Ryoji Ikebe , Isamu Miyamoto
Abstract: A measurement processing process S103 of measuring a cut width of a film based on an image obtained by imaging, with an imaging unit 270, a peripheral portion of a substrate which is processed based on a substrate processing recipe; a creation process S602 of creating a management list in which a set value of the cut width of the film, a measurement value of the cut width of the film measured through the measurement processing process and time information at which the measurement result is obtained are correlated; an analysis process S603 (S606) of analyzing a state of the processed substrate based on the created management list; and a notification process S605 (S608, S609) of making a preset notification to a user based on an analysis result obtained through the analysis process are provided.
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公开(公告)号：US20170278728A1
公开(公告)日：2017-09-28
申请号：US15452848
申请日：2017-03-08
Applicant: Tokyo Electron Limited
Inventor： Yoshifumi Amano , Yuki Ito , Kento Kurusu
CPC classification number: H01L21/67051 , A46B11/066 , B08B1/002 , B08B1/007 , B08B1/02 , B08B1/04 , B08B3/024 , B08B3/041 , B08B3/08 , H01L21/67046
Abstract: A substrate cleaning apparatus includes a substrate holding unit, a brush, an arm, a discharge portion and a guide member. The substrate holding unit is configured to hold a substrate rotatably. The brush has a main body, a cleaning body provided at a lower portion of the main body and configured to be pressed onto the substrate, and a hollow portion formed in the main body and provided with an open top and an open bottom. The arm is configured to rotatably support the main body with a spindle therebetween. The discharge portion is provided at the arm, and plural kinds of processing liquids are discharged from the discharge portion while being switched. The guide member is provided between the discharge portion and the brush, and is configured to receive the processing liquid discharged from the discharge portion and guide the received processing liquid into the hollow portion.
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公开(公告)号：US20160064256A1
公开(公告)日：2016-03-03
申请号：US14840237
申请日：2015-08-31
Applicant: Tokyo Electron Limited
Inventor： Yoshifumi Amano , Yuki Ito , Eiichiro Okamoto
CPC classification number: H01L21/6715
Abstract: A substrate liquid processing apparatus includes a cup 50 configured to receive a processing liquid supplied onto a substrate. The cup includes a ring-shaped first exhaust space 530 in contact with a top opening 50A, and a ring-shaped second exhaust space 540 which is in contact with an exhaust port 52 and is disposed adjacent to the first exhaust space, and the first exhaust space and the second exhaust space communicate with each other intermittently or continuously along an entire circumference thereof. Further, the cup has an inner wall that confines an inner periphery of the second exhaust space, and the inner wall includes a first wall portion 581 serving as an upper part of the inner wall, and a second wall portion which serves as a lower part of the inner wall and is located at an inner position than the first wall portion in a radial direction.
Abstract translation: 基板液体处理装置包括配置为接收供给到基板上的处理液的杯50。 杯子包括与顶部开口50A接触的环形的第一排气空间530和与排气口52接触并邻近第一排气空间设置的环形的第二排气空间540， 排气空间和第二排气空间沿其整个周边间歇地连续地连通。 此外，杯具有限制第二排气空间的内周的内壁，内壁包括用作内壁的上部的第一壁部581和作为下壁的第二壁部 并且位于比径向上的第一壁部的内部位置。
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公开(公告)号：US20140251539A1
公开(公告)日：2014-09-11
申请号：US14198922
申请日：2014-03-06
Applicant: Tokyo Electron Limited
Inventor： Tsuyoshi Mizuno , Yoichi Tokunaga , Hiromitsu Namba , Tatuhiro Ueki , Jun Nogami , Jiro Higashijima , Yoshifumi Amano , Takatoshi Miyama
IPC: H01L21/67
CPC classification number: H01L21/67051
Abstract: Disclosed are a substrate processing apparatus and a substrate processing method configured to perform a processing of a substrate by a processing liquid, in which the processing liquid is supplied to a substrate which rotates to process the substrate. The substrate processing apparatus includes a substrate rotating unit that rotates the substrate, a processing liquid supply unit that supplies the processing liquid to the substrate, a collection cup disposed around the substrate to collect the processing liquid supplied to the substrate, and form an air stream that flows downward from an opening formed at a top of the collection cup through a periphery of an outside of the substrate, and a negative pressure generating unit which is provided at an inside of the collection cup and at an outside of the opening and generates a negative pressure which acts toward the outside of the substrate.
Abstract translation: 公开了一种基板处理装置和基板处理方法，其被配置为通过处理液体进行基板的处理，其中处理液体被供给到旋转以处理基板的基板。 基板处理装置包括使基板旋转的基板旋转单元，将处理液供给到基板的处理液供给单元，设置在基板周围的收集杯，收集供给到基板的处理液，形成空气流 从形成在收集杯顶部的开口向下流过基板外部的周边;以及负压产生单元，其设置在收集杯的内部并在开口的外侧，并产生 作用于衬底外部的负压。
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公开(公告)号：US12133297B2
公开(公告)日：2024-10-29
申请号：US16842848
申请日：2020-04-08
Applicant: Tokyo Electron Limited
Inventor： Yoshifumi Amano , Akira Fujita
CPC classification number: H05B1/0247 , H01L21/6715 , H05B1/0233
Abstract: A substrate processing apparatus includes a holder and a heating device. The holder is configured to hold a central portion of a bottom surface of a substrate to be rotated. The heating device is configured to supply a heated fluid to the bottom surface of the substrate. The heating device includes multiple fins, a heat source, a fluid introduction unit and a fluid discharge unit. The multiple fins are arranged along a circumferential direction of the substrate to be located under the substrate at an outer side than the holder. The heat source is configured to heat the multiple fins. The fluid introduction unit is configured to introduce the fluid to the multiple fins. The fluid discharge unit is configured to discharge the fluid, which is heated while passing through the multiple fins, to the bottom surface of the substrate.
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