公开(公告)号：US20220246440A1

公开(公告)日：2022-08-04

申请号：US17586251

申请日：2022-01-27

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Yusuke TAKINO

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: A substrate processing method includes: (a) providing a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed on the first mask, the second mask being different in film type from the first mask and having an opening; (b) selectively etching the first mask with respect to the second mask, thereby forming an opening in the first mask such that an opening dimension of at least a portion of the first mask is larger than an opening dimension of a bottom of the second mask; and (c) etching the etching target film.

公开(公告)号：US20250062130A1

公开(公告)日：2025-02-20

申请号：US18935294

申请日：2024-11-01

Applicant: Tokyo Electron Limited

Inventor： Yusuke TAKINO ,  Takahiro YONEZAWA

IPC: H01L21/3065 ,  C23F1/12 ,  H01J37/32 ,  H01L21/308

Abstract: A plasma processing method according to the present disclosure includes a preparing a substrate having a first etching film and a mask on the first etching film, the mask including a metal-containing film; and generating plasma in a chamber with a processing gas including one or both of a chlorine-containing gas and a bromine-containing gas to etch the first etching film.

公开(公告)号：US20210265169A1

公开(公告)日：2021-08-26

申请号：US17179502

申请日：2021-02-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kentaro YAMAGUCHI ,  Yusuke TAKINO

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: An etching method includes: (a) etching a substrate including an etching target film and a mask formed on the etching target film to form a recess that reaches the etching target film; (b) forming a protective film having a thickness corresponding to one molecular layer on a surface of the recess using a first gas; (c) etching the etching target film with plasma generated from a second gas while leaving the protective film on a side wall of the recess; and (d) repeating (b) and (c).

公开(公告)号：US20230377899A1

公开(公告)日：2023-11-23

申请号：US18199734

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Takahiro YONEZAWA ,  Yusuke TAKINO ,  Kenta ONO ,  Tetsuya NISHIZUKA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01J37/32449 ,  H01J37/3211 ,  H01L21/32136 ,  H01L21/31116 ,  H01J2237/334

Abstract: A plasma processing method according to the present disclosure is performed with a plasma processing apparatus, and includes: (a) preparing a substrate on a substrate support in the chamber, the substrate having an etching target film including a first silicon-containing film, and a first metal-containing film on the etching target film, the first metal-containing film including an opening pattern; and (b) etching the etching target film. (b) includes supplying a processing gas including one or more gases containing carbon, hydrogen, and fluorine into the chamber to form a plasma from the processing gas within the chamber and etch the first silicon-containing film to form the opening pattern in the first silicon-containing film, and a ratio of the number of hydrogen atoms to the number of fluorine atoms in the processing gas is 0.3 or more.

公开(公告)号：US20210233778A1

公开(公告)日：2021-07-29

申请号：US17160780

申请日：2021-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Maju TOMURA ,  Tomohiko NIIZEKI ,  Takayuki KATSUNUMA ,  Hironari SASAGAWA ,  Yuta NAKANE ,  Shinya ISHIKAWA ,  Kenta ONO ,  Sho KUMAKURA ,  Yusuke TAKINO ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/3205 ,  H01L21/3213

Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

公开(公告)号：US20190259860A1

公开(公告)日：2019-08-22

申请号：US16274273

申请日：2019-02-13

Applicant: Tokyo Electron Limited

Inventor： Yusuke TAKINO ,  Kentarou Fujita ,  Yusuke Yanagisawa

IPC: H01L29/66 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/78 ,  C23C16/455 ,  H01J37/32 ,  C23C16/52

Abstract: In a processing method according to one exemplary embodiment, a first nitrified region of a workpiece is etched. The first nitrified region is provided on a first protrusion made of silicon. The workpiece further has a second protrusion, a second nitrified region, and an organic region. The second protrusion is made of silicon. The second nitrified region contains silicon and nitrogen and is provided on the second protrusion. The organic region covers the first and second protrusions and the first and second nitrified regions. In the processing method, the organic region is partially etched to expose the first nitrified region. Then, a silicon oxide film is formed to cover the surface of an intermediate product produced from the workpiece. Then, the silicon oxide film is etched to expose an upper surface of the first nitrified region. Then, the first nitrified region is isotropically etched.

公开(公告)号：US20240312771A1

公开(公告)日：2024-09-19

申请号：US18603584

申请日：2024-03-13

Applicant: Tokyo Electron Limited

Inventor： Yusuke TAKINO ,  Noboru SAITO ,  Takahiro YOKOYAMA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32724 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/334

Abstract: An etching method includes: (a) providing a substrate having a film stack including at least two different silicon-containing films and a mask on the film stack; (b) etching the film stack using plasma generated from a first processing gas to form a recess in the film stack; and (c) supplying hydrogen fluoride to the recess in the film stack.

公开(公告)号：US20220199415A1

公开(公告)日：2022-06-23

申请号：US17553879

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Yusuke TAKINO ,  Takayuki HOSHI

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/32

Abstract: A plasma processing method includes: (a) providing a substrate having an etching target film with a recess formed therein, on a substrate support; (b) forming a protective film on a side wall of the recess; (c) after (b), generating plasma from a processing gas to etch a bottom of the recess; and (d) performing a sequence including (b) and (c) one or more times. The step (c) includes a first stage of etching the bottom of the recess while suppressing a formation of a shoulder portion caused when reaction by-products produced by the etching adhere to the side wall, and a second stage of further etching the bottom of the recess in a state where a temperature of the substrate support is controlled to −40° C. or lower, after the first stage.

公开(公告)号：US20210057220A1

公开(公告)日：2021-02-25

申请号：US16979063

申请日：2019-07-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke YANAGISAWA ,  Yusuke TAKINO

IPC: H01L21/033 ,  H01L21/67

Abstract: An etching method includes: forming a second film on a workpiece target including a processing target film, a layer including a plurality of convex portions formed on the processing target film, and a first film that covers the plurality of convex portions and the processing target film exposed between the plurality of convex portions; etching the second film in a state where the second film remains on a portion of the first film that covers a side surface of each of the plurality of convex portions; and etching the first film in a state where the second film remains on the portion of the first film that covers the side surface of each of the plurality of convex portions, thereby exposing a top portion of each of the plurality of convex portions and the processing target film between the plurality of convex portions.