公开(公告)号：US20240112922A1

公开(公告)日：2024-04-04

申请号：US18479599

申请日：2023-10-02

Applicant: Tokyo Electron Limited

Inventor： Ryo MATSUBARA ,  Atsushi TAKAHASHI ,  Yuta NAKANE ,  Noboru SAITO

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/31116 ,  H01J37/32899 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/332 ,  H01J2237/334

Abstract: In one exemplary embodiment, there is provided an etching method. The method includes (a) preparing a substrate, the substrate comprising a silicon-containing film and a mask, the silicon-containing film including a recess, the mask being provided on the silicon-containing film and including an opening that exposes the recess; (b) forming a carbon-containing film on a side wall of the silicon-containing film, the side wall defining the recess; and (c) by using a plasma generated from a processing gas, forming a protective film containing tungsten on the carbon-containing film and etching the silicon-containing film in the recess, the processing gas including a fluorine-containing gas and a tungsten-containing gas.

公开(公告)号：US20230135998A1

公开(公告)日：2023-05-04

申请号：US17978558

申请日：2022-11-01

Applicant: Tokyo Electron Limited

Inventor： Satoshi OHUCHIDA ,  Koki MUKAIYAMA ,  Noboru SAITO ,  Yoshihide KIHARA ,  Maju TOMURA

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CxFy gas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.

公开(公告)号：US20240312771A1

公开(公告)日：2024-09-19

申请号：US18603584

申请日：2024-03-13

Applicant: Tokyo Electron Limited

Inventor： Yusuke TAKINO ,  Noboru SAITO ,  Takahiro YOKOYAMA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32724 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/334

Abstract: An etching method includes: (a) providing a substrate having a film stack including at least two different silicon-containing films and a mask on the film stack; (b) etching the film stack using plasma generated from a first processing gas to form a recess in the film stack; and (c) supplying hydrogen fluoride to the recess in the film stack.

公开(公告)号：US20240112918A1

公开(公告)日：2024-04-04

申请号：US18479986

申请日：2023-10-03

Applicant: Tokyo Electron Limited

Inventor： Noboru SAITO ,  Yuta NAKANE ,  Atsushi TAKAHASHI ,  Shinya ISHIKAWA ,  Satoshi OHUCHIDA ,  Maju TOMURA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32899 ,  H01L21/308 ,  H01L21/31144

Abstract: A plasma processing system includes: first and second processing chambers having respective first and second substrate supports; a transport chamber connected to the first and second processing chambers, and having a transport device; and a controller that executes processing of (a) disposing a substrate including a silicon-containing film having a recess portion and a mask on the silicon-containing film on the first substrate support of the first processing chamber, (b) forming a carbon-containing film on a side wall of the silicon-containing film defining the recess portion in the first processing chamber, (c) transporting the substrate from the first processing chamber to the second processing chamber via the transport chamber and disposing the substrate on the second substrate support, and (d) etching a bottom portion of the recess portion where the carbon-containing film is formed by using a plasma formed from a first processing gas in the second processing chamber.