公开(公告)号：US20150108469A1

公开(公告)日：2015-04-23

申请号：US14515579

申请日：2014-10-16

Applicant: UNIVERSITAET STUTTGART

Inventor： Marcus Herrmann ,  Norbert Fruehauf

IPC: H01L29/786 ,  H01L21/465 ,  H01L27/12 ,  H01L29/66 ,  H01L21/321 ,  H01L29/45 ,  H01L21/467

CPC classification number: H01L29/78606 ,  H01L21/321 ,  H01L21/465 ,  H01L21/467 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.

Abstract translation: 薄膜晶体管包括氧化半导体沟道，金属或氧化栅极，漏极和源极接触以及位于氧化物半导体沟道与漏极和源极之间的至少一个势垒层，以阻止氧化半导体沟道 和漏极和源极接触。

公开(公告)号：US09446946B2

公开(公告)日：2016-09-20

申请号：US14862504

申请日：2015-09-23

Applicant: UNIVERSITAET STUTTGART

Inventor： Patrick Schalberger ,  Norbert Fruehauf ,  Marcus Herrmann

IPC: H01L21/00 ,  H01L21/16 ,  B81C1/00 ,  H01L29/66 ,  H01L21/306 ,  H01L21/465 ,  H01L21/28 ,  H01L21/44 ,  H01L29/24 ,  H01L29/872 ,  H01L29/16

CPC classification number: B81C1/00246 ,  B81C2201/0133 ,  B81C2203/0742 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/44 ,  H01L21/465 ,  H01L29/1604 ,  H01L29/24 ,  H01L29/247 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/872

Abstract: A method for the fabrication of thin-film transistors together with micromechanical components, other active electrical components or both on an amorphous or polycrystalline substrate includes disposing the thin-film transistors and the other components on different areas of the substrate.

公开(公告)号：US09425321B2

公开(公告)日：2016-08-23

申请号：US14515579

申请日：2014-10-16

Applicant: UNIVERSITAET STUTTGART

Inventor： Marcus Herrmann ,  Norbert Fruehauf

IPC: H01L21/321 ,  H01L29/786 ,  H01L21/465 ,  H01L21/467 ,  H01L27/12 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L21/321 ,  H01L21/465 ,  H01L21/467 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.

公开(公告)号：US08983240B2

公开(公告)日：2015-03-17

申请号：US13645394

申请日：2012-10-04

Applicant: Universitaet Stuttgart

Inventor： Patrick Schalberger ,  Norbert Fruehauf

IPC: G02F1/035

CPC classification number: G02F1/13 ,  G02F2001/13793

Abstract: The invention relates to an electro-optical phase modulator with a plurality of elements arranged between two substrates, which\are produced from an optically isotropic material which becomes optically anisotropic when an electrical field is applied, wherein for each of the elements respectively one electrode is arranged on both substrates and the electrodes can be individually controlled at least on one of the substrates.

Abstract translation: 本发明涉及一种电光相位调制器，其具有布置在两个基板之间的多个元件，其由施加电场时成为光学各向异性的光学各向同性材料制成，其中对于每个元件，一个电极是 布置在两个基板上，并且可以至少在一个基板上单独地控制电极。