公开(公告)号：US10032883B2

公开(公告)日：2018-07-24

申请号：US15236430

申请日：2016-08-13

Applicant: Ultratech, Inc.

Inventor： Oleg Gluschenkov ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/08 ,  H01L29/737 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L29/10

CPC classification number: H01L29/66242 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/7378

Abstract: Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.

公开(公告)号：US20160351682A1

公开(公告)日：2016-12-01

申请号：US15236430

申请日：2016-08-13

Applicant: Ultratech, Inc.

Inventor： Oleg Gluschenkov ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

IPC: H01L29/66 ,  H01L29/737 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/66242 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/7378

Abstract: Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.

公开(公告)号：US09450069B2

公开(公告)日：2016-09-20

申请号：US13852013

申请日：2013-03-28

Applicant: Ultratech, Inc.

Inventor： Oleg Gluschenkov ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/08 ,  H01L29/737

CPC classification number: H01L29/66242 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/7378

Abstract: Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.