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公开(公告)号：US11960203B2
公开(公告)日：2024-04-16
申请号：US17749114
申请日：2022-05-19
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yi-Chieh Lai , Chih-Hsien Tang
CPC classification number: G03F7/0002 , B29C59/022 , B29C59/026
Abstract: A method of forming patterns on a substrate by double nanoimprint processes includes providing a first replicate mold and a second replicate mold. The first replicate mold includes numerous first patterns. The second replicate mold includes at least one second pattern. The second pattern corresponds to at least one of the first patterns. Later, a first substrate is provided. A first polymeric compound layer is coated on the first substrate. Next, the first patterns are nanoimprinted into the first polymeric compound layer. Subsequently, the first substrate is etched by taking the first polymeric compound layer as a mask. After that, a second polymeric compound layer is coated on the first substrate. Later, the second pattern is nanoimprinted into the second polymeric compound layer. Finally, the first substrate is etched by taking the second polymeric compound layer as a mask.
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公开(公告)号：US09524362B2
公开(公告)日：2016-12-20
申请号：US14692723
申请日：2015-04-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Harn-Jiunn Wang , Kuei-Chun Hung , Chih-Hsien Tang , Chin-Lung Lin
IPC: G06F17/50
CPC classification number: G06F17/5068 , G03F1/70 , G03F7/70433 , G03F7/70466
Abstract: A method of decomposing pattern layout for generating patterns on photomasks is disclosed. The method includes decomposing features of an integrated circuit layout into discrete patterns based on the relation between these features. The features include first features and second features. The first features are then classified into a first feature pattern and a second feature pattern, and the second features are classified into third, fourth, fifth and sixth feature patterns. The spacings of the second features in the fifth and sixth feature patterns are greater than a minimum exposure limits. Finally, the first feature pattern is outputted to a first photomask, the second feature pattern is outputted to a second photomask, the third and fifth feature patterns are outputted to a third photomask, and the fourth and sixth feature patterns are outputted to a fourth photomask.
Abstract translation: 公开了一种分解用于在光掩模上产生图案的图案布局的方法。 该方法包括基于这些特征之间的关系将集成电路布局的特征分解为离散模式。 功能包括第一个功能和第二个功能。 然后将第一特征分类为第一特征图案和第二特征图案，并且将第二特征分类为第三，第四，第五和第六特征图案。 第五和第六特征图案中的第二特征的间距大于最小暴露极限。 最后，将第一特征图案输出到第一光掩模，将第二特征图案输出到第二光掩模，将第三和第五特征图案输出到第三光掩模，并将第四和第六特征图案输出到第四光掩模 。
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公开(公告)号：US12140863B2
公开(公告)日：2024-11-12
申请号：US17750421
申请日：2022-05-23
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Su-Yun Fang , Chih-Hsien Tang , Yi-Lin Tsai
IPC: G03F7/00 , H01L21/308 , H01L21/311 , H01L21/3213
Abstract: An imprint method includes the following steps. A first resist layer is formed on a first substrate. A first imprinting step using a first mold is performed to the first resist layer. A first etching process is performed to the first substrate with the first resist layer as an etching mask after the first imprinting step so as to form a first recess pattern in the first substrate. A second resist layer is formed on the first substrate. A second imprinting step using a second mold is performed to the second resist layer. A second etching process is performed to the first substrate with the second resist layer as an etching mask after the second imprinting step so as to form second recess patterns in the first substrate. A depth of the first recess pattern is greater than a depth of each of the second recess patterns.
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公开(公告)号：US09268896B1
公开(公告)日：2016-02-23
申请号：US14576212
申请日：2014-12-19
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Hsien Tang , Shih-Hung Tsai , Chun-Hsien Huang , Yao-Jen Fan
IPC: G06F17/50
CPC classification number: G03F1/38 , G03F1/70 , G03F7/70425 , H01L21/823431
Abstract: A method of forming a photomask comprises providing a predetermined fin array having a plurality of fin patterns to a computer readable medium in a computer system. First of all, a plurality of width markers is defined by using the computer system, with each of the width marker parallel to each other and comprising two fin patterns, wherein each of the width markers is spaced from each other by a space. Then, a number of the width markers is checked to be an even. Following this, a plurality of pre-mandrel patterns is defined corresponding to odd numbered ones of the spaces. Then, a plurality of mandrel patterns is defined by sizing up the pre-mandrel patterns. Finally, the mandrel patterns are outputted to form a photomask.
Abstract translation: 形成光掩模的方法包括向计算机系统中的计算机可读介质提供具有多个鳍图案的预定鳍阵列。 首先，通过使用计算机系统来定义多个宽度标记，其中每个宽度标记彼此平行并且包括两个鳍图案，其中每个宽度标记彼此间隔一个空间。 然后，多个宽度标记被检查为均匀。 此后，对应于空格中的奇数编号的多个预心轴图案被定义。 然后，通过调整预心轴图案的尺寸来定义多个心轴图案。 最后，输出心轴图案以形成光掩模。
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公开(公告)号：US20160048072A1
公开(公告)日：2016-02-18
申请号：US14504401
申请日：2014-10-01
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Hsien Tang , Yao-Jen Fan , Chin-Lung Lin
IPC: G03F1/70
CPC classification number: G03F1/70 , G03F7/70433 , G03F7/70466 , G06F17/5081
Abstract: A layout pattern decomposition method includes following steps. A layout pattern is received. The layout pattern includes a plurality of features, and an edge-to-edge space is respectively defined in between two adjacent features. A sum of a width of the edge-to-edge space and a width of the feature on a left side of the edge-to-edge space and a sum of the width of the edge-to-edge space and a width of the feature on a right side of the edge-to-edge space are respectively calculated. The sums and a predetermined value are respectively compared. When any one of the sums is smaller than the predetermined value, the two features on the two sides of the edge-to-edge space are colored by a first color and alternatively a second color. The features including the first color are assigned to a first pattern and the features including the second color to a second pattern.
Abstract translation: 布局模式分解方法包括以下步骤。 接收到布局模式。 布局图案包括多个特征，并且在两个相邻特征之间分别限定边缘到边缘空间。 边缘至边缘空间的宽度和边缘至边缘空间的左侧上的特征的宽度的总和以及边缘至边缘空间的宽度和宽度之和 分别计算边缘到边缘空间右侧的特征。 分别对和值和预定值进行比较。 当总和中的任何一个小于预定值时，边缘到边缘空间的两侧上的两个特征被第一颜色和第二颜色着色。 包括第一颜色的特征被分配给第一图案，并且将包括第二颜色的特征分配给第二图案。
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Patent Agency Ranking
公开(公告)号：US20240393676A1
公开(公告)日：2024-11-28
申请号：US18334382
申请日：2023-06-14
Applicant: United Microelectronics Corp.
Inventor： Ming-Hsien Kuo , Chih-Hsien Tang , Song-Yi Lin
IPC: G03F1/70 , G06F30/398
Abstract: A design method of a photomask structure including the following steps is provided. A layout pattern is provided. The layout pattern includes first to third basic patterns. The second basic pattern is located between the first and third basic patterns and connected to the first and third basic patterns. There is a first jog portion between the first and second basic patterns, there is a second jog portion between the second and third basic patterns, and the first and second jog portions are located at two opposite sides of the layout pattern. The first and second jog portions are moved to align the first and second jog portions with each other and to eliminate the second basic pattern, wherein a first area change amount produced by moving the first jog portion is equal to a second area change amount produced by moving the second jog portion.
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公开(公告)号：US20230350286A1
公开(公告)日：2023-11-02
申请号：US17749114
申请日：2022-05-19
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yi-Chieh Lai , Chih-Hsien Tang
CPC classification number: G03F7/0002 , B29C59/022 , B29C59/026
Abstract: A method of forming patterns on a substrate by double nanoimprint processes includes providing a first replicate mold and a second replicate mold. The first replicate mold includes numerous first patterns. The second replicate mold includes at least one second pattern. The second pattern corresponds to at least one of the first patterns. Later, a first substrate is provided. A first polymeric compound layer is coated on the first substrate. Next, the first patterns are nanoimprinted into the first polymeric compound layer. Subsequently, the first substrate is etched by taking the first polymeric compound layer as a mask. After that, a second polymeric compound layer is coated on the first substrate. Later, the second pattern is nanoimprinted into the second polymeric compound layer. Finally, the first substrate is etched by taking the second polymeric compound layer as a mask.
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公开(公告)号：US20200212030A1
公开(公告)日：2020-07-02
申请号：US16255786
申请日：2019-01-23
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chung-Liang Chu , Chih-Hsien Tang , Yu-Ruei Chen , Ya-Huei Tsai , Rai-Min Huang , Chueh-Fei Tai
Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes: a first magnetic tunneling junction (MTJ) pattern on a substrate; a second MTJ pattern adjacent to the first MTJ pattern; and a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement.
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公开(公告)号：US09529254B2
公开(公告)日：2016-12-27
申请号：US14504401
申请日：2014-10-01
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Hsien Tang , Yao-Jen Fan , Chin-Lung Lin
CPC classification number: G03F1/70 , G03F7/70433 , G03F7/70466 , G06F17/5081
Abstract: A layout pattern decomposition method includes following steps. A layout pattern is received. The layout pattern includes a plurality of features, and an edge-to-edge space is respectively defined in between two adjacent features. A sum of a width of the edge-to-edge space and a width of the feature on a left side of the edge-to-edge space and a sum of the width of the edge-to-edge space and a width of the feature on a right side of the edge-to-edge space are respectively calculated. The sums and a predetermined value are respectively compared. When any one of the sums is smaller than the predetermined value, the two features on the two sides of the edge-to-edge space are colored by a first color and alternatively a second color. The features including the first color are assigned to a first pattern and the features including the second color to a second pattern.
Abstract translation: 布局模式分解方法包括以下步骤。 接收到布局模式。 布局图案包括多个特征，并且在两个相邻特征之间分别限定边缘到边缘空间。 边缘至边缘空间的宽度和边缘至边缘空间的左侧上的特征的宽度的总和以及边缘至边缘空间的宽度和宽度之和 分别计算边缘到边缘空间右侧的特征。 分别对和值和预定值进行比较。 当总和中的任何一个小于预定值时，边缘到边缘空间的两侧上的两个特征被第一颜色和第二颜色着色。 包括第一颜色的特征被分配给第一图案，并且将包括第二颜色的特征分配给第二图案。
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公开(公告)号：US20240063023A1
公开(公告)日：2024-02-22
申请号：US17947186
申请日：2022-09-19
Applicant: United Microelectronics Corp.
Inventor： Teng Yao Chang , Chih-Hsien Tang
IPC: H01L21/308 , H01L21/3105 , G03F7/00
CPC classification number: H01L21/3086 , H01L21/31053 , G03F7/0002
Abstract: A patterning process is provided. The patterning process comprises the following steps. A material layer is formed on a substrate. An imprinting process is performed on the material layer using an imprint stamp to form a patterned material layer having a plurality of pattern portions. A hard mask layer is formed between adjacent pattern portions. An etching process is performed using the hard mask layer as an etching mask to remove the pattern portions and a part of the substrate. The hard mask layer is removed.
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