公开(公告)号：US20160181383A1

公开(公告)日：2016-06-23

申请号：US14613343

申请日：2015-02-03

Applicant: United Microelectronics Corp.

Inventor： Shih-Hsien Huang ,  Che-Wei Chang ,  Chih-Chieh Yeh ,  Tzu-I Tsai

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L21/302 ,  H01L29/66 ,  H01L29/45

CPC classification number: H01L29/41791 ,  H01L21/28518 ,  H01L21/302 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L29/0847 ,  H01L29/41758 ,  H01L29/458 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial structure, and a recess. The epitaxial structure is disposed in the substrate. The recess is formed in the epitaxial structure, where the recess has a cross-section in a direction perpendicular to the substrate, and at least one portion of the recess is gradually expanded from an opening of the recess.

Abstract translation: 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件包括衬底，外延结构和凹部。 外延结构设置在基板中。 凹槽形成在外延结构中，其中凹部在垂直于衬底的方向上具有横截面，并且凹部的至少一部分从凹部的开口逐渐膨胀。

公开(公告)号：US09466678B2

公开(公告)日：2016-10-11

申请号：US14613343

申请日：2015-02-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Hsien Huang ,  Che-Wei Chang ,  Chih-Chieh Yeh ,  Tzu-I Tsai

IPC: H01L21/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/45 ,  H01L21/285 ,  H01L21/302 ,  H01L29/08

CPC classification number: H01L29/41791 ,  H01L21/28518 ,  H01L21/302 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L29/0847 ,  H01L29/41758 ,  H01L29/458 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial structure, and a recess. The epitaxial structure is disposed in the substrate. The recess is formed in the epitaxial structure, where the recess has a cross-section in a direction perpendicular to the substrate, and at least one portion of the recess is gradually expanded from an opening of the recess.

Abstract translation: 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件包括衬底，外延结构和凹部。 外延结构设置在基板中。 凹槽形成在外延结构中，其中凹部在垂直于衬底的方向上具有横截面，并且凹部的至少一部分从凹部的开口逐渐膨胀。

公开(公告)号：US20240145564A1

公开(公告)日：2024-05-02

申请号：US17994007

申请日：2022-11-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tzu-I Tsai ,  Shih-An Huang

IPC: H01L29/423 ,  H01L29/40

CPC classification number: H01L29/42364 ,  H01L29/401

Abstract: The invention provides a semiconductor structure, which comprises a substrate, a gate dielectric layer on the substrate, wherein the gate dielectric layer comprises two sidewall portions and a horizontal portion between the two sidewall portions, wherein a height of the horizontal portion is lower than that of the two sidewall portions, and the horizontal portion and the two sidewall portions are perpendicular to each other, and a gate conductive layer on the horizontal portion of the gate dielectric layer.