公开(公告)号：US09450094B1

公开(公告)日：2016-09-20

申请号：US14848305

申请日：2015-09-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Chieh Yeh ,  Kai-Lin Lee

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/267

CPC classification number: H01L29/7848 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor process includes the following steps. A fin on a substrate is provided. Spacers are formed only on sidewalls of the fin, where a top surface of the fin is higher than or equal to top surfaces of the spacers. An epitaxial structure is formed on the fin. The present invention also provides a fin-shaped field effect transistor including a fin, spacers and an epitaxial structure. The fin is located on a substrate. The spacers are disposed only on sidewalls of the fin, where a top surface of the fin is higher than or equal to top surfaces of the spacers. The epitaxial structure is disposed on the fin.

Abstract translation: 半导体工艺包括以下步骤。 提供了基板上的翅片。 间隔件仅形成在翅片的侧壁上，其中翅片的顶表面高于或等于间隔件的顶表面。 在翅片上形成外延结构。 本发明还提供了一种鳍状场效应晶体管，其包括鳍状物，间隔物和外延结构。 翅片位于基底上。 间隔件仅设置在翅片的侧壁上，其中翅片的顶表面高于或等于间隔件的顶表面。 外延结构设置在翅片上。

公开(公告)号：US20160181383A1

公开(公告)日：2016-06-23

申请号：US14613343

申请日：2015-02-03

Applicant: United Microelectronics Corp.

Inventor： Shih-Hsien Huang ,  Che-Wei Chang ,  Chih-Chieh Yeh ,  Tzu-I Tsai

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L21/302 ,  H01L29/66 ,  H01L29/45

CPC classification number: H01L29/41791 ,  H01L21/28518 ,  H01L21/302 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L29/0847 ,  H01L29/41758 ,  H01L29/458 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial structure, and a recess. The epitaxial structure is disposed in the substrate. The recess is formed in the epitaxial structure, where the recess has a cross-section in a direction perpendicular to the substrate, and at least one portion of the recess is gradually expanded from an opening of the recess.

Abstract translation: 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件包括衬底，外延结构和凹部。 外延结构设置在基板中。 凹槽形成在外延结构中，其中凹部在垂直于衬底的方向上具有横截面，并且凹部的至少一部分从凹部的开口逐渐膨胀。

公开(公告)号：US09466678B2

公开(公告)日：2016-10-11

申请号：US14613343

申请日：2015-02-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Hsien Huang ,  Che-Wei Chang ,  Chih-Chieh Yeh ,  Tzu-I Tsai

IPC: H01L21/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/45 ,  H01L21/285 ,  H01L21/302 ,  H01L29/08

CPC classification number: H01L29/41791 ,  H01L21/28518 ,  H01L21/302 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L29/0847 ,  H01L29/41758 ,  H01L29/458 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial structure, and a recess. The epitaxial structure is disposed in the substrate. The recess is formed in the epitaxial structure, where the recess has a cross-section in a direction perpendicular to the substrate, and at least one portion of the recess is gradually expanded from an opening of the recess.

Abstract translation: 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件包括衬底，外延结构和凹部。 外延结构设置在基板中。 凹槽形成在外延结构中，其中凹部在垂直于衬底的方向上具有横截面，并且凹部的至少一部分从凹部的开口逐渐膨胀。