公开(公告)号：US20230412989A1

公开(公告)日：2023-12-21

申请号：US18320000

申请日：2023-05-18

Applicant: VERMON SA

Inventor： Youngil KIM ,  Cyril MEYNIER ,  Dominique GROSS ,  Jacques HELLER ,  Nicolas SENEGOND

IPC: H04R19/00 ,  H04R31/00 ,  H04R17/10

CPC classification number: H04R19/005 ,  H04R17/10 ,  H04R31/006

Abstract: A method of manufacturing a CMUT transducer includes: a) forming a first silicon oxide layer on a face of a first silicon layer defining a first electrode of the transducer; b) forming a second silicon oxide layer on a face of a second silicon layer; c) subsequent to step a), forming, at the side of said face of the first silicon layer, by locally oxidizing the silicon of the first silicon layer, silicon oxide walls; and d) subsequent to steps b) and c), transferring and attaching the set comprising the second silicon layer and the second silicon oxide layer on the set comprising the first silicon layer, the first silicon oxide layer, and the silicon oxide walls.