公开(公告)号：US20230317520A1

公开(公告)日：2023-10-05

申请号：US17712461

申请日：2022-04-04

Applicant: Winbond Electronics Corp.

Inventor： Chun-Hung LIN ,  Kao-Tsair TSAI ,  Chung-Hsien LIU ,  Tz-Hau GUO ,  Yen-Jui CHU

IPC: H01L21/768 ,  H01L21/8234

CPC classification number: H01L21/76897 ,  H01L21/76816 ,  H01L21/823475 ,  H01L21/76834

Abstract: A manufacturing method for a semiconductor structure is provided. First active areas, a second active area, and a third active area are formed. A first dielectric layer is formed on the active areas. A patterned region that includes a cavity region and a dielectric region is formed in the first dielectric layer, and the cavity region surrounds the dielectric region. A filling layer is formed in the cavity region. Multiple first contact holes and at least one second contact hole that penetrate the first dielectric layer are formed. Each first contact hole exposes a portion of the corresponding first active area, and the second contact hole replaces the dielectric region and exposes a portion of the second active area. Metal layers are filled in to the first contact holes and the second contact hole.

公开(公告)号：US20220181339A1

公开(公告)日：2022-06-09

申请号：US17545519

申请日：2021-12-08

Applicant: Winbond Electronics Corp.

Inventor： Chien-Hsien WU ,  Chun-Hung LIN ,  Kao-Tsair TSAI ,  Yao-Ting TSAI

IPC: H01L27/11517 ,  H01L29/66

Abstract: A method for manufacturing a non-volatile memory device is provided. The method includes forming a trench through a sacrificial layer and extending into a substrate, filling a first insulating material into the trench, and implanting a dopant in the first insulating material by an implantation process. Then, the first insulating material is partially removed to form a first recess between the sacrificial layers. The lowest point of the first recess is lower than the top surface of the substrate. The method includes filling a second insulating material in the first recess and removing the sacrificial layer to form a second recess adjacent to the second insulating material The method includes forming a first polycrystalline silicon layer in the second recess, and sequentially forming a dielectric layer and a second polycrystalline silicon layer on the first polycrystalline silicon layer.

公开(公告)号：US20190051527A1

公开(公告)日：2019-02-14

申请号：US16046069

申请日：2018-07-26

Applicant: Winbond Electronics Corp.

Inventor： Chun-Hung LIN ,  Ching-Chun HUANG ,  Chung-Chen HSU

IPC: H01L21/266 ,  H01L21/027

Abstract: A method for forming a photo-mask includes providing a first pattern, wherein the first pattern includes a first light-transmitting region and a first light-shielding region; transforming the first pattern into a second pattern, wherein the second pattern includes a second light-transmitting region and a second light-shielding region, the second light-transmitting region is located within range of the first light-transmitting region, and the second light-transmitting region has an area which is smaller than that of the first light-transmitting region, the second light-shielding region includes the entire region of the first light-shielding region, and the second light-shielding region has an area which is greater than that of the first light-shielding region; and forming the second pattern on a photo-mask substrate to form a photo-mask, wherein the photo-mask is used in an ion implantation process of a material layer.