公开(公告)号：US20210242209A1

公开(公告)日：2021-08-05

申请号：US17166583

申请日：2021-02-03

Applicant: Winbond Electronics Corp.

Inventor： Cheol-Soo PARK ,  Ming-Tang CHEN

IPC: H01L27/108

Abstract: A DRAM device and its manufacturing method are provided. The DRAM device includes an interlayer dielectric layer and capacitor units framed on a substrate. The interlayer dielectric layer has capacitor unit accommodating through holes and includes a first support layer, a composite dielectric layer, and a second support layer sequentially formed on the substrate. The composite dielectric layer includes at least one first insulating layer and second insulating layer alternately stacked. Each capacitor unit accommodating through hole forms a first opening in the second insulating layer and forms a second opening communicating with the first opening in the first insulating layer. The second opening is wider than the first opening. The capacitor units are formed in the capacitor unit accommodating through holes. The top of the capacitor unit is higher than the top surface of the interlayer dielectric layer and defines a recessed region.