公开(公告)号：US20230086425A1

公开(公告)日：2023-03-23

申请号：US17993600

申请日：2022-11-23

Applicant: Yangtze Memory Technologies Co., Ltd.

Inventor： Zhongwang SUN ,  Guangji LI ,  Kun ZHANG ,  Ming HU ,  Jiwei CHENG ,  Shijin LUO ,  Kun BAO ,  Zhiliang XIA

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11529

Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.

公开(公告)号：US20210265375A1

公开(公告)日：2021-08-26

申请号：US17313740

申请日：2021-05-06

Applicant: Yangtze Memory Technologies Co., Ltd.

Inventor： Zhongwang SUN ,  Guangji LI ,  Kun ZHANG ,  Ming HU ,  Jiwei CHENG ,  Shijin LUO ,  Kun BAO ,  Zhiliang XIA

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11529

Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.

公开(公告)号：US20210066335A1

公开(公告)日：2021-03-04

申请号：US16684793

申请日：2019-11-15

Applicant: Yangtze Memory Technologies Co., Ltd.

Inventor： Yingjie OUYANG ,  Zhiliang XIA ,  Lei JIN ,  Qiguang WANG ,  Wenxi ZHOU ,  Zhongwang SUN ,  Rui SU ,  Yueqiang PU ,  Jiwei CHENG

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L23/522 ,  H01L23/528 ,  G11C5/06

Abstract: A semiconductor device is provided. The semiconductor device includes a channel structure that extends from a side of a substrate. The channel structure has sidewalls and a bottom region. The channel structure includes a bottom channel contact that is positioned at the bottom region, and a channel layer that is formed along the sidewalls and over the bottom channel contact. The channel structure further includes a high-k layer that is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.