公开(公告)号：US09450077B2

公开(公告)日：2016-09-20

申请号：US14586009

申请日：2014-12-30

Applicant: Ye Xin Technology Consulting Co., Ltd.

Inventor： Kuo-Lung Fang ,  Yi-Chun Kao ,  Po-Li Shih ,  Chih-Lung Lee ,  Hsin-Hua Lin

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L29/7869

Abstract: A method of manufacturing a thin film transistor substrate is provided, including a first photoresist pattern covers a channel during a process of etching a second photoresist pattern and protects the channel. Thus, an etching stop layer is not required.

Abstract translation: 提供一种制造薄膜晶体管基板的方法，包括在蚀刻第二光致抗蚀剂图案的过程中第一光致抗蚀剂图案覆盖通道并保护通道。 因此，不需要蚀刻停止层。

公开(公告)号：US09379251B1

公开(公告)日：2016-06-28

申请号：US14591189

申请日：2015-01-07

Applicant: Ye Xin Technology Consulting Co., Ltd.

Inventor： Kuo-Lung Fang ,  Yi-Chun Kao ,  Po-Li Shih ,  Chih-Lung Lee ,  Hsin-Hua Lin

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/425 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method for forming a TFT includes providing a substrate, a gate electrode on the substrate, an electrically insulating layer on the substrate to totally cover the gate electrode, a channel layer on the electrically insulating layer, a first photoresist pattern on the channel layer, a metal layer on the electrically insulating layer, the channel layer and the first photoresist layer, and a second photoresist pattern on the metal layer. A middle portion of the metal layer is then removed to form a source electrode and a drain electrode and to expose the first photoresist pattern and a portion of the channel layer between the first and second photoresist patterns. The exposed portion of the channel layer is then processed to have its electrical conductivity be lowered to thereby reduce a hot-carrier effect of the channel layer.

Abstract translation: 一种用于形成TFT的方法，包括：在基板上设置基板，栅电极，在基板上形成电绝缘层，以完全覆盖栅电极，电绝缘层上的沟道层，沟道层上的第一光刻胶图案， 电绝缘层上的金属层，沟道层和第一光致抗蚀剂层，以及金属层上的第二光致抗蚀剂图案。 然后去除金属层的中间部分以形成源电极和漏电极，并且在第一和第二光致抗蚀剂图案之间露出第一光致抗蚀剂图案和沟道层的一部分。 然后处理通道层的暴露部分以使其导电性降低，从而降低沟道层的热载流子效应。

公开(公告)号：US09823528B2

公开(公告)日：2017-11-21

申请号：US14474553

申请日：2014-09-02

Applicant: Ye Xin Technology Consulting Co., Ltd.

Inventor： Wu-Liu Tsai ,  Yi-Chun Kao ,  Hsin-Hua Lin ,  Po-Li Shih ,  Chih-Lung Lee

IPC: G02F1/1335 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1333

CPC classification number: G02F1/136213 ,  G02F1/133555 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/136227 ,  G02F2001/133397 ,  G02F2001/134372 ,  H01L27/1244 ,  H01L27/1255

Abstract: An array substrate for a liquid crystal display device includes a first storage capacitor and a second storage capacitor for increased capacitance. The first storage capacitor is formed by a first common electrode and a pixel electrode. The second storage capacitor is formed by a second common electrode and the pixel electrode.

公开(公告)号：US09634147B2

公开(公告)日：2017-04-25

申请号：US14697154

申请日：2015-04-27

Applicant: Ye Xin Technology Consulting Co., Ltd.

Inventor： Hsin-Hua Lin ,  Yi-Chun Kao

IPC: G02F1/136 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1335 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/1248

Abstract: A thin film transistor (TFT) array substrate of a liquid crystal display (LCD) panel includes a first substrate, a gate located on the first substrate, a gate insulation layer located on the first substrate and covers the gate and the first substrate, a source layer located on the gate insulation layer to correspond to the gate, an etching stopping layer located on the source layer, and a source and a drain located on the etching stopping layer. The etching stopping layer is made of color photoresist.