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    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
    1.
    发明申请
    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权

    公开(公告)号：US20250166980A1

    公开(公告)日：2025-05-22

    申请号：US19033080

    申请日：2025-01-21

    Applicant: Tokyo Electron Limited

    Inventor： Yusuke SHIMIZU ,  Satoru NAKAMURA ,  Toshihisa OZU ,  Naoki MATSUMOTO

    IPC: H01J37/32

    Abstract: Provided is a technique for grasping the state of plasma processing. A plasma processing method is a method for generating plasma in a chamber to executing plasma processing on a substrate in a plasma processing apparatus having the chamber and a substrate support disposed in the chamber, the method including (a) placing the substrate on the substrate support, (b) generating plasma in the chamber to execute the plasma processing on the substrate on the substrate support, (c) acquiring data related to ion flux generated between the plasma generated in the chamber and the substrate placed on the substrate support in the (b), and (d) detecting an end point of the plasma processing based on the data.

    DRY-DEVELOPING RESIST FILM FORMED OF METAL-CONTAINING RESIST
    2.
    发明申请
    DRY-DEVELOPING RESIST FILM FORMED OF METAL-CONTAINING RESIST 有权

    公开(公告)号：US20250166976A1

    公开(公告)日：2025-05-22

    申请号：US19032757

    申请日：2025-01-21

    Applicant: Tokyo Electron Limited

    Inventor： Yuta NAKANE ,  Kenta ONO ,  Sho KUMAKURA ,  Tetsuya NISHIZUKA ,  Masanobu HONDA

    IPC: H01J37/32

    Abstract: A method for processing a substrate is disclosed. The method includes (a) providing a substrate on a substrate support in a processing chamber, the substrate having an underlying film and a resist film disposed on the underlying film and formed of a metal-containing resist, and the resist film having a first region and a second region. The method further includes (b) dry-developing the resist film by supplying a processing gas containing a carboxylic acid into the processing chamber, exposing the substrate to the carboxylic acid, and selectively removing the second region with respect to the first region. In the (b), a pressure or a partial pressure of the carboxylic acid is 0.3 Torr (40 Pa) or more and less than 100 Torr (13,332 Pa).

    SULFUR-CONTAINING MOLECULES FOR HIGH ASPECT RATIO PLASMA ETCHING PROCESSES
    3.
    发明申请
    SULFUR-CONTAINING MOLECULES FOR HIGH ASPECT RATIO PLASMA ETCHING PROCESSES 有权

    公开(公告)号：US20250166974A1

    公开(公告)日：2025-05-22

    申请号：US18513489

    申请日：2023-11-17

    Applicant: L'Air Liquide, Societe Anonyme pour l'Etude et l’Exploitation des Procedes Georges Claude

    Inventor： Nathan STAFFORD

    IPC: H01J37/32 ,  C09K13/00 ,  H01L21/311

    Abstract: A method for forming a structure using a patterned mask layer comprises introducing an etching gas containing a sulfur-containing gas into a reaction chamber, converting the etching gas to a plasma, and allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films so that the one or more silicon-containing films are selectively etched versus the patterned mask layer to form the structure, wherein the sulfur-containing gas contains a —SH thiol group and an aromatic 6 membered carbon ring having the formula wherein R1, R2, R3, R4 and R5 are independently selected from F, H, and/or CxFyHz group substituted on the aromatic ring, where x, y and z are integers, and at least one of the R1, R2, R3, R4 and R5 contains at least one fluorine atom, and S represents the —SH thiol group.

    CONTROL OF PLASMA SHEATH WITH BIAS SUPPLIES
    4.
    发明申请
    CONTROL OF PLASMA SHEATH WITH BIAS SUPPLIES 有权

    公开(公告)号：US20250166970A1

    公开(公告)日：2025-05-22

    申请号：US18925583

    申请日：2024-10-24

    Applicant: Advanced Energy Industries, Inc.

    Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

    IPC: H01J37/32 ,  H01L21/67

    Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

    PLASMA CHAMBER FOR WAFER ETCHING AND WAFER ETCHING METHOD USING PLASMA CHAMBER
    5.
    发明申请
    PLASMA CHAMBER FOR WAFER ETCHING AND WAFER ETCHING METHOD USING PLASMA CHAMBER 有权

    公开(公告)号：US20250166968A1

    公开(公告)日：2025-05-22

    申请号：US18727333

    申请日：2022-11-09

    Applicant: Nam Hun KIM

    Inventor： Nam Hun KIM

    IPC: H01J37/32

    Abstract: The present invention relates to a plasma chamber for wafer etching and a wafer etching method using the plasma chamber, wherein the plasma chamber includes: a housing having a reaction space therein to etch a wafer through plasma; a base plate provided inside the housing and on which the wafer is seated; and a pressure adjusting unit for adjusting the pressure inside the housing, wherein the pressure adjusting unit adjusts the pressure inside the housing to 50-150 mTorr. The wafer etching method using the plasma chamber of the present invention comprises: a pressure adjustment step of adjusting the pressure inside the housing to 50-150 mTorr through the pressure adjusting unit; a source power adjustment step of adjusting a source power of the plasma source to 300-1000 W through the plasma source.

    DUAL PLENUM SHOWERHEAD WITH CENTER TO EDGE TUNABILITY
    9.
    发明申请
    DUAL PLENUM SHOWERHEAD WITH CENTER TO EDGE TUNABILITY 有权

    公开(公告)号：US20250163581A1

    公开(公告)日：2025-05-22

    申请号：US18840365

    申请日：2023-02-13

    Applicant: Lam Research Corporation

    Inventor： Krishna Birru

    IPC: C23C16/455 ,  H01J37/32

    Abstract: A dual-zone process gas distribution showerhead is disclosed. In at least one embodiment, dual-zone showerhead comprises an inner zone and an outer zone surrounding the inner zone. At least a first plenum is within the first zone and coupled to a first gas inlet port. In at least one embodiment, outer zone comprises at least a second plenum coupled to a second gas inlet port. In at least one embodiment, first plenum is coupled to a first plurality of apertures within the inner zone. In at least one embodiment, second plenum is coupled to a second plurality of apertures in the outer zone.

    ETCH FEEDBACK FOR CONTROL OF UPSTREAM PROCESS
    10.
    发明申请
    ETCH FEEDBACK FOR CONTROL OF UPSTREAM PROCESS 有权

    公开(公告)号：US20250157802A1

    公开(公告)日：2025-05-15

    申请号：US19023108

    申请日：2025-01-15

    Applicant: Applied Materials, Inc.

    Inventor： Priyadarshi Panda ,  Lei Lian ,  Leonard Michael Tedeschi

    IPC: H01J37/32 ,  H01L21/66

    Abstract: A substrate processing system comprises an etch chamber configured to perform an etch process on a substrate, the etch chamber comprising an optical sensor to generate one or more optical measurements of a film on the substrate during and/or after the etch process. The system further comprises a computing device operatively connected to the etch chamber, wherein the computing device is to: receive the one or more optical measurements of the film; determine, for each optical measurement of the one or more optical measurements, a film thickness of the film; determine an etch rate of the film based on the one or more optical measurements using the determined film thickness of each optical measurement of the one or more optical measurements; and determine a process parameter value of at least one process parameter for a previously performed process that was performed on the substrate based on the etch rate.

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