Invention Grant
- Patent Title: Multilayer structure, method for manufacturing same, semiconductor device, and crystalline film
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Application No.: US15508465Application Date: 2015-08-28
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Publication No.: US10043664B2Publication Date: 2018-08-07
- Inventor: Masaya Oda , Akio Takatsuka , Toshimi Hitora
- Applicant: FLOSFIA INC.
- Applicant Address: JP Kyoto-shi, Kyoto
- Assignee: FLOSFIA INC.
- Current Assignee: FLOSFIA INC.
- Current Assignee Address: JP Kyoto-shi, Kyoto
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Priority: JP2014-178601 20140902
- International Application: PCT/JP2015/074380 WO 20150828
- International Announcement: WO2016/035696 WO 20160310
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/02 ; H01L29/24 ; H01L29/04 ; H01L21/24
Abstract:
A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.
Public/Granted literature
- US20170278706A1 MULTILAYER STRUCTURE, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR DEVICE, AND CRYSTALLINE FILM Public/Granted day:2017-09-28
Information query
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