Invention Grant
- Patent Title: Method of fabricating substrate structure and substrate structure fabricated by the same method
-
Application No.: US14265369Application Date: 2014-04-30
-
Publication No.: US10087527B2Publication Date: 2018-10-02
- Inventor: Babak Radi , Shih-Hong Chen , Yu-Fu Kuo , Chun-Lin Chen , Jing-Wen Chen
- Applicant: Wistron NeWeb Corp.
- Applicant Address: TW Hsinchu
- Assignee: Wistron NeWeb Corp.
- Current Assignee: Wistron NeWeb Corp.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/528
- IPC: H01L23/528 ; C23C18/16 ; C23C18/18 ; H01L23/532 ; H01L23/522 ; H01L23/498 ; G03F7/20 ; H01L23/06 ; B32B15/04 ; B32B15/08 ; B32B15/20 ; B32B3/02 ; B32B3/30 ; H05K3/10 ; H05K3/24 ; H05K1/09 ; H05K3/00

Abstract:
The present disclosure is directed to a method of fabricating a substrate structure and a substrate structure fabricated by the same method. The method would include forming a first metal layer directly on a base, forming a first protective layer directly on the first metal layer, forming a second protective layer by using a compound comprising a thiol group directly on the first protective layer, patterning the second protective layer to form a pattern having an opening exposing the first protective layer, and forming a second metal layer within the opening of the second protective layer and directly on the first protective layer. The substrate structure would include a base, a first metal layer, a first protective layer, a second protective layer, and a second metal layer.
Public/Granted literature
- US20150315708A1 METHOD OF FABRICATING SUBSTRATE STRUCTURE AND SUBSTRATE STRUCTURE FABRICATED BY THE SAME METHOD Public/Granted day:2015-11-05
Information query
IPC分类: