Invention Grant
- Patent Title: Semiconductor light emitting device and method of fabricating the same
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Application No.: US15643807Application Date: 2017-07-07
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Publication No.: US10283669B2Publication Date: 2019-05-07
- Inventor: Hsin-Chih Chiu , Chih-Chiang Lu , Chun-Yu Lin , Ching-Huai Ni , Yi-Ming Chen , Tzu-Chieh Hsu , Ching-Pei Lin
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN201210451045 20121112
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/38 ; H01L33/46 ; H01L33/62 ; H01L25/075 ; H01L33/22 ; H01L21/00
Abstract:
A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.
Public/Granted literature
- US20170309774A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-10-26
Information query
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