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    Light-emitting device
    1.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09515225B2

    公开(公告)日：2016-12-06

    申请号：US14953876

    申请日：2015-11-30

    Applicant: Epistar Corporation

    Inventor： Ching-Huai Ni ,  Chia-Liang Hsu ,  Yi-Ming Chen

    IPC: H01L31/12 ,  H01L27/32 ,  H01L33/10 ,  H01L33/24 ,  H01L33/38 ,  H01L33/30 ,  H01L33/32 ,  H01L33/22

    CPC classification number: H01L33/382 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016

    Abstract: A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface higher than the non-planar roughened surface of the first type semiconductor layer.

    Abstract translation: 本公开的实施例的发光器件包括衬底; 包括第一类型半导体层，第二类型半导体层和形成在第一类型半导体层和第二类型半导体层之间的有源层的半导体堆叠，其中第一类型半导体层包括非平面粗糙表面; 形成在所述基板和所述半导体叠层之间的接合层; 以及多个凹部，每个凹部包括比所述非平面粗糙表面低的底面; 以及物理地埋置在第一类型半导体层中的多个埋置电极，其中多个埋入电极分别形成在多个凹槽中，并且多个埋入电极中的一个包括比第一类型半导体的非平面粗糙化表面高的上表面 层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
    半导体发光装置及其制造方法

    公开(公告)号：US20160204305A1

    公开(公告)日：2016-07-14

    申请号：US14442319

    申请日：2013-07-03

    Applicant: EPISTAR CORPORATION

    Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

    IPC: H01L33/00 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46

    CPC classification number: H01L33/0025 ,  H01L21/00 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.

    Abstract translation: 一种制造半导体发光器件的方法，包括以下步骤：提供第一衬底; 在所述第一衬底上提供多个外延单元，​​其中所述多个外延单元包括：多个第一外延单元，​​其中所述第一外延单元中的每一个具有第一几何形状和第一区域; 和多个第二外延单元，​​其中每个第二外延单元具有第二几何形状和第二区域; 提供具有表面的第二基底; 将所述多个第二外延单元转移到所述第二基板的表面; 并且分割所述第一基板以形成多个第一半导体发光器件，其中所述第一半导体发光器件中的每一个具有所述第一外延单元; 其中所述第一几何形状与所述第二几何形状不同，或者所述第一区域不同于所述第二区域。

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