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公开(公告)号：US20230010081A1
公开(公告)日：2023-01-12
申请号：US17860749
申请日：2022-07-08
Applicant: EPISTAR CORPORATION
Inventor： Chun-Yu Lin , Jun-Yi Li , Yi-Yang Chiu , Chun-Wei Chang , Yi-Ming Chen , Chang-Hsiu Wu , Wen-Luh Liao , Chen Ou , Wei-Wun Jheng
Abstract: A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.
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公开(公告)号：US10749077B2
公开(公告)日：2020-08-18
申请号：US16227253
申请日：2018-12-20
Applicant: EPISTAR CORPORATION
Inventor： Chun-Yu Lin , Yung-Fu Chang , Rong-Ren Lee , Kuo-Feng Huang , Cheng-Long Yeh , Yi-Ching Lee , Ming-Siang Huang , Ming-Tzung Liou
Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.
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公开(公告)号：US10580937B2
公开(公告)日：2020-03-03
申请号：US16228575
申请日：2018-12-20
Applicant: EPISTAR CORPORATION
Inventor： Chun-Yu Lin , Yung-Fu Chang , Rong-Ren Lee , Kuo-Feng Huang , Cheng-Long Yeh , Yi-Ching Lee , Ming-Siang Huang , Ming-Tzung Liou
Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.
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公开(公告)号：US10529896B2
公开(公告)日：2020-01-07
申请号：US16136102
申请日：2018-09-19
Applicant: EPISTAR CORPORATION
Inventor： Yao-Ru Chang , Wen-Luh Liao , Chun-Yu Lin , Hsin-Chan Chung , Hung-Ta Cheng
IPC: H01L33/00 , H01L33/44 , H01L33/38 , H01L33/24 , H01L33/30 , H01L33/62 , H01L33/08 , H01L33/20 , H01L33/22
Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.
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公开(公告)号：US09929207B2
公开(公告)日：2018-03-27
申请号：US15059936
申请日：2016-03-03
Applicant: EPISTAR CORPORATION
Inventor： Rong-Ren Lee , Cheng-Hong Chen , Chih-Peng Ni , Chun-Yu Lin
CPC classification number: H01L27/15 , H01L28/20 , H01L33/025 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.
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Patent Agency Ranking
公开(公告)号：US09825088B2
公开(公告)日：2017-11-21
申请号：US14808295
申请日：2015-07-24
Applicant: EPISTAR CORPORATION
Inventor： Shao-Ping Lu , Yi-Ming Chen , Yu-Ren Peng , Chun-Yu Lin , Chun-Fu Tsai , Tzu-Chieh Hsu
CPC classification number: H01L27/153 , H01L33/005 , H01L33/08
Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.
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公开(公告)号：US09705029B2
公开(公告)日：2017-07-11
申请号：US14901415
申请日：2013-06-26
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Huang , Chih-Chiang Lu , Chun-Yu Lin , Hsin-Chih Chiu
CPC classification number: H01L33/02 , H01L22/12 , H01L22/14 , H01L24/24 , H01L25/0753 , H01L33/36 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface.
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公开(公告)号：US09508894B2
公开(公告)日：2016-11-29
申请号：US14908886
申请日：2013-07-29
Applicant: EPISTAR CORPORATION
Inventor： Chih-Chiang Lu , Yi-Ming Chen , Chun-Yu Lin , Ching-Pei Lin , Chung-Hsun Chien , Chien-Fu Huang , Hao-Min Ku , Min-Hsun Hsieh , Tzu-Chieh Hsu
IPC: H01L33/62 , H01L33/00 , H01L21/683
CPC classification number: H01L33/0079 , H01L21/6835 , H01L21/6836 , H01L33/0095 , H01L33/62 , H01L2221/68318 , H01L2221/68363 , H01L2221/68381 , H01L2933/0066
Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.
Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。
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公开(公告)号：US09461209B2
公开(公告)日：2016-10-04
申请号：US14853511
申请日：2015-09-14
Applicant: Epistar Corporation
Inventor： Min-Yen Tsai , Chao-Hsing Chen , Tsung-Hsun Chiang , Wen-Hung Chuang , Bo-Jiun Hu , Tzu-Yao Tseng , Jia-Kuen Wang , Kuan-Yi Lee , Yi-Ming Chen , Chun-Yu Lin , Tsung-Hsien Yang , Tzu-Chieh Hsu , Kun-De Lin , Yao-Ning Chan , Chih-Chiang Lu
CPC classification number: H01L33/382 , H01L33/0012 , H01L33/22 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
Abstract translation: 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。
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公开(公告)号：US20160284939A1
公开(公告)日：2016-09-29
申请号：US15176890
申请日：2016-06-08
Applicant: EPISTAR CORPORATION
Inventor： Chun-Yu Lin , Yi-Ming Chen , Shih-Chang Lee , Yao-Ning Chan , Tzu-Chieh Hsu
CPC classification number: H01L33/387 , H01L33/06 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2933/0016 , H01L2933/0025
Abstract: An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.
Abstract translation: 提供了一种光电器件。 光电子器件包括：用于发光的光电子系统; 光电子系统上的多个接触区域并且彼此分离; 和多个手指在光电子系统上并且与多个接触区域相对; 其中所述多个接触区域中的第一接触区域位于两个相邻的指状物之间，并且所述第一接触区域和所述相邻指状物之一之间的第一距离在所述两个相邻指状物之间的第二距离的5％至50％之间。
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