- Patent Title: Ion source and electron source having single-atom termination structure, tip having single-atom termination structure, gas field ion source, focused ion beam apparatus, electron source, electron microscope, mask repair apparatus, and method of manufacturing tip having single-atom termination structure
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Application No.: US16203078Application Date: 2018-11-28
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Publication No.: US10529531B2Publication Date: 2020-01-07
- Inventor: Chuhei Oshima , Masahiko Tomitori , Anto Yasaka , Tatsuya Shimoda
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holland & Hart LLP
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/08 ; H01J37/28 ; H01J37/305 ; H01J37/30 ; H01J37/21 ; H01J37/252
Abstract:
Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip (1) having a single-atom termination structure includes: a thin line member (2) made of a first metal material; a protruding portion (4) made of a second metal material, which is formed at least in a distal end portion (2a) of the thin line member (2), and has a distal end terminated with only one atom; and a supply portion (5) made of the second metal material to be supplied to the protruding portion (4), which is formed in the vicinity of the distal end portion (2a) of the thin line member (2).
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