Invention Grant
- Patent Title: Focused ion beam apparatus
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Application No.: US15895492Application Date: 2018-02-13
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Publication No.: US10790112B2Publication Date: 2020-09-29
- Inventor: Yoshimi Kawanami
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@113a8ab5
- Main IPC: H01J37/147
- IPC: H01J37/147 ; H01J37/08 ; H01J37/09 ; H01J37/10 ; H01J37/20 ; H01J37/244 ; H01J37/28

Abstract:
The focused ion beam apparatus includes: a vacuum container; an emitter tip disposed in the vacuum container and having a pointed front end; a gas field ion source; a focusing lens; a first deflector; a first aperture; an objective lens focusing the ion beam passing through the first deflector; and a sample stage. A signal generator responding to the ion beam in a point-shaped area is formed between the sample stage and an optical system including at least the focusing lens, the first aperture, the first deflector, and the objective lens, and a scanning field ion microscope image of the emitter tip is produced by matching a signal output from the signal generator and scanning of the ion beam by the first deflector with each other.
Public/Granted literature
- US20180233319A1 FOCUSED ION BEAM APPARATUS Public/Granted day:2018-08-16
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