A pattern inspection apparatus according to an aspect described herein includes: a stage on which an object to be inspected is capable to be mounted, a multibeam column that irradiates the object to be inspected with multi-primary electron beams, and a multi-detector including a first detection pixel that receives irradiation of a first secondary electron beam emitted after a first beam scanning region of the object to be inspected is irradiated with a first primary electron beam of the multi-primary electron beams and a second detection pixel that receives irradiation of a second secondary electron beam emitted after a second beam scanning region adjacent to the first beam scanning region of the object to be inspected and overlapping with the first beam scanning region is irradiated with a second primary electron beam adjacent to the first primary electron beam of the multi-primary electron beams; a comparison unit that obtains a difference in beam intensity between the first primary electron beam and the second primary electron beam by comparing overlapping portions of a first frame image acquired through entering of the first secondary electron beam into the first detection pixel and a second frame image acquired through entering of the second secondary electron beam into the second detection pixel; and a sensitivity adjustor that adjusts detection sensitivity of the first detection pixel and/or the second detection pixel so as to correct the difference in beam intensity.