公开(公告)号：US12255038B2

公开(公告)日：2025-03-18

申请号：US18547556

申请日：2022-02-22

Applicant: TWI Limited

Inventor： Colin Ribton

IPC: H01J37/065 ,  H01J1/18 ,  H01J1/88 ,  H01J3/02

Abstract: The present invention relates to an electron gun cathode mount adapted at one end to secure a thermionic cathode and at the other end to be connected to an attachment member, wherein the electron gun cathode mount is structured so as to be capable of, when in use, reducing heat transfer from the thermionic cathode to the attachment member, and the material forming the electron gun cathode mount has a thermal conductivity of less than 10 Wm−1K−1 at the operating temperature of the thermionic cathode in a direction from the thermionic cathode to the attachment member. The present invention also relates to an electron gun assembly having the electron gun cathode mount installed therein.

公开(公告)号：US20240128042A1

公开(公告)日：2024-04-18

申请号：US18547556

申请日：2022-02-22

Applicant: TWI Limited

Inventor： Colin RIBTON

IPC: H01J37/065 ,  H01J1/18 ,  H01J1/88 ,  H01J3/02

CPC classification number: H01J37/065 ,  H01J1/18 ,  H01J1/88 ,  H01J3/024 ,  H01J2201/19 ,  H01J2203/02

Abstract: The present invention relates to an electron gun cathode mount adapted at one end to secure a thermionic cathode and at the other end to be connected to an attachment member, wherein the electron gun cathode mount is structured so as to be capable of, when in use, reducing heat transfer from the thermionic cathode to the attachment member, and the material forming the electron gun cathode mount has a thermal conductivity of less than 10 Wm−1K−1 at the operating temperature of the thermionic cathode in a direction from the thermionic cathode to the attachment member. The present invention also relates to an electron gun assembly having the electron gun cathode mount installed therein.

公开(公告)号：US20240029989A1

公开(公告)日：2024-01-25

申请号：US18258461

申请日：2021-12-20

Applicant: Denka Company Limited

Inventor： Hiromitsu CHATANI

IPC: H01J1/146 ,  H01J1/16 ,  H01J37/065

CPC classification number: H01J1/146 ,  H01J1/16 ,  H01J37/065 ,  H01J2237/06308

Abstract: A method for manufacturing an electron source includes steps of sandwiching a welding object in which a tip of an electron emission material and a tungsten filament overlap in direct contact between a pair of welding electrodes, and welding the tip and the tungsten filament by causing a current to flow while pressing forces are applied to the welding object by the pair of welding electrodes. A thickness of the welding object is within a range of 50 to 500 μm.

公开(公告)号：US20230352262A1

公开(公告)日：2023-11-02

申请号：US17928401

申请日：2020-06-29

Applicant: Hitachi High-Tech Corporation

Inventor： Keigo KASUYA ,  Shuhei ISHIKAWA ,  Kenji TANIMOTO ,  Takashi DOI ,  Soichiro MATSUNAGA ,  Hiroshi MORITA ,  Daigo KOMESU ,  Kenji MIYATA

IPC: H01J37/065 ,  H01J37/073 ,  H01J37/28

CPC classification number: H01J37/065 ,  H01J37/073 ,  H01J37/28

Abstract: In an electron source including a suppressor electrode having an opening at one end portion thereof in a direction along a central axis and an electron emission material having a distal end protruding from the opening, the suppressor electrode further includes a receding portion receding to a position farther from the distal end of the electron emission material than the opening in the direction along the central axis at a position in an outer peripheral direction than the opening, and at least a part of the receding portion is disposed within a diameter of 2810 μm from a center of the opening. Accordingly, an electron source, an electron gun, and a charged particle beam device such as an electron microscope using the same, in which a machine difference in a device performance due to an axial shift between the electron emission material and the suppressor electrode is reduced, are implemented.

公开(公告)号：US11688579B2

公开(公告)日：2023-06-27

申请号：US17549854

申请日：2021-12-13

Applicant: ASML Netherlands B.V.

Inventor： Juying Dou ,  Zheng Fan ,  Tzu-Yi Kuo ,  Zhong-wei Chen

IPC: H01J37/073 ,  H01J37/065 ,  H01J1/304 ,  H01J1/14 ,  H01J9/02 ,  H01J9/04 ,  H01J37/26

CPC classification number: H01J37/073 ,  H01J1/14 ,  H01J1/304 ,  H01J9/025 ,  H01J9/042 ,  H01J37/065 ,  H01J37/26 ,  H01J2201/196 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30449 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06308 ,  H01J2237/06316 ,  H01J2237/06341

Abstract: Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

公开(公告)号：US20220262592A1

公开(公告)日：2022-08-18

申请号：US17177926

申请日：2021-02-17

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Pavel Adamec

IPC: H01J37/065 ,  H01J37/28 ,  H01J37/147 ,  H01J37/21

Abstract: A charged particle beam apparatus (100) is described. The charged particle beam apparatus includes a first vacuum region (121) in which a charged particle beam emitter (105) for emitting a charged particle beam (102) along an optical axis (A) is arranged, a second vacuum region (122) downstream of the first vacuum region and separated from the first vacuum region by a first gas separation wall (132) with a first differential pumping aperture (131), wherein the first differential pumping aperture (131) is configured as a first beam limiting aperture for the charged particle beam (102); and a third vacuum region (123) downstream of the second vacuum region and separated from the second vacuum region by a second gas separation wall (134) with a second differential pumping aperture (133), wherein the second differential pumping aperture (133) is configured as a second beam limiting aperture for the charged particle beam (102). Further described are a scanning electron microscope and a method of operating a charged particle beam apparatus.

公开(公告)号：US11373836B2

公开(公告)日：2022-06-28

申请号：US16966908

申请日：2018-12-27

Applicant: 38th Research Institute, China Electronics Technology Group Corporation

Inventor： Xuehui Wang ,  Junting Wang ,  Xianbin Hu ,  Dizhi Chen ,  Guang Tang ,  Huarong Liu ,  Lei Zheng ,  Qing Qian ,  Chunning Zheng ,  Guochao Wang

IPC: H01J37/073 ,  H01J37/065 ,  H01J3/02

Abstract: The present disclosure provides a method of manufacturing an electron source. The method includes forming one or more fixed emission sites on at least one needle tip, the fixed emission sites including a reaction product formed by metal atoms on a surface of the needle tip and gas molecules.

公开(公告)号：US11335608B2

公开(公告)日：2022-05-17

申请号：US17224407

申请日：2021-04-07

Applicant: KLA Corporation

Inventor： Xinrong Jiang ,  Christopher Sears

IPC: H01J37/00 ,  H01L21/66 ,  H01J37/063 ,  H01J37/065 ,  H01J37/244 ,  H01J37/14

Abstract: An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

公开(公告)号：US11295925B2

公开(公告)日：2022-04-05

申请号：US17434833

申请日：2020-07-13

Applicant: Param Corporation

Inventor： Hiroshi Yasuda ,  Yoshihisa Ooae ,  Tatsuya Shibaoka ,  Hidekazu Murata

IPC: H01J37/073 ,  H01J37/065 ,  H01J1/05 ,  H01J37/305

Abstract: An electron gun device according to the present invention emits an electron beam by means of heating to a high temperature in a vacuum. According to the present invention, the surface of a material (108, 125), which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation; the liquid hydrogenated metal is contained in a hollow cover tube container (102, 124), which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container (102, 124) to a high temperature; subsequently, the hydrogenated liquid metal is exposed from the cover tube container (102, 124) and forms a liquid surface where gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.

公开(公告)号：US20210142975A1

公开(公告)日：2021-05-13

申请号：US17022504

申请日：2020-09-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Juying Dou ,  Zheng Fan ,  Tzu-Yi Kuo ,  Zhongwei Chen

IPC: H01J37/073 ,  H01J37/065 ,  H01J1/304 ,  H01J1/14 ,  H01J9/02 ,  H01J9/04

Abstract: Electron emitters and method of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.