Invention Grant
- Patent Title: Structure including SiOCN layer and method of forming same
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Application No.: US18225366Application Date: 2023-07-24
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Publication No.: US12293911B2Publication Date: 2025-05-06
- Inventor: YoungChol Byun , Bed Prasad Sharma , Shankar Swaminathan , Eric James Shero
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/36 ; H01L21/02 ; H01L21/768
Abstract:
A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.
Public/Granted literature
- US20230369040A1 STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME Public/Granted day:2023-11-16
Information query
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