公开(公告)号：US20230369040A1

公开(公告)日：2023-11-16

申请号：US18225366

申请日：2023-07-24

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/36 ,  H01L21/768

CPC classification number: H01L21/02126 ,  C23C16/45553 ,  C23C16/36 ,  H01L21/02274 ,  H01L21/76829 ,  H01L21/0228

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US20200283893A1

公开(公告)日：2020-09-10

申请号：US16802920

申请日：2020-02-27

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: C23C16/36 ,  C23C16/455

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US11742198B2

公开(公告)日：2023-08-29

申请号：US16802920

申请日：2020-02-27

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: C23C16/36 ,  C23C16/455 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02126 ,  C23C16/36 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/76829

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US20200286725A1

公开(公告)日：2020-09-10

申请号：US16800114

申请日：2020-02-25

Applicant: ASM IP Holding B.V.

Inventor： Bed Prasad Sharma ,  Shankar Swaminathan ,  YoungChol Byun ,  Eric James Shero

IPC: H01L21/02 ,  C23C28/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/36

Abstract: A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.

公开(公告)号：US12293911B2

公开(公告)日：2025-05-06

申请号：US18225366

申请日：2023-07-24

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: C23C16/455 ,  C23C16/36 ,  H01L21/02 ,  H01L21/768

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US11114294B2

公开(公告)日：2021-09-07

申请号：US16800114

申请日：2020-02-25

Applicant: ASM IP Holding B.V.

Inventor： Bed Prasad Sharma ,  Shankar Swaminathan ,  YoungChol Byun ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/36 ,  C23C28/04 ,  C23C16/455

Abstract: A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.

公开(公告)号：US11901175B2

公开(公告)日：2024-02-13

申请号：US17859929

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  C23C16/24 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32724 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02315 ,  H01L21/68714 ,  H01L21/76897 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02208 ,  H01L21/67184

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US20220351958A1

公开(公告)日：2022-11-03

申请号：US17859929

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34 ,  H01L21/687

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US11424119B2

公开(公告)日：2022-08-23

申请号：US16801910

申请日：2020-02-26

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  C23C16/34 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  H01L21/687 ,  H01L21/67

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US20200286726A1

公开(公告)日：2020-09-10

申请号：US16801910

申请日：2020-02-26

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/768 ,  H01L21/687 ,  C23C16/455 ,  C23C16/34

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.