Invention Application
US20170024136A1 MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE
审中-公开
存储器管理方法,存储器控制电路单元和存储器存储器件
- Patent Title: MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE
- Patent Title (中): 存储器管理方法,存储器控制电路单元和存储器存储器件
-
Application No.: US14846830Application Date: 2015-09-07
-
Publication No.: US20170024136A1Publication Date: 2017-01-26
- Inventor: Kok-Yong Tan , Horng-Sheng Yan
- Applicant: PHISON ELECTRONICS CORP.
- Priority: TW104123602 20150721
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory management method, a memory control circuit unit and a memory storage device are provided. In an exemplary embodiment, the memory management method includes: receiving a first write command and first write data and obtaining a first number; programming the first write data and moving first storage data stored in a plurality of first physical programming units, where a total number of the first physical programming units conforms to the first number; receiving a second write command and second write data and obtaining a second number; programming the second write data and moving second storage data stored in a plurality of second physical programming units, where a total number of the second physical programming units conforms to the second number; and erasing at least one physical erasing unit. Accordingly, waste of system resource in the data merging procedure may be reduced.
Public/Granted literature
- US10338854B2 Memory management method, memory control circuit unit and memory storage device Public/Granted day:2019-07-02
Information query