Invention Application
US20170024136A1 MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE 审中-公开
存储器管理方法,存储器控制电路单元和存储器存储器件

  • Patent Title: MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE
  • Patent Title (中): 存储器管理方法,存储器控制电路单元和存储器存储器件
  • Application No.: US14846830
    Application Date: 2015-09-07
  • Publication No.: US20170024136A1
    Publication Date: 2017-01-26
  • Inventor: Kok-Yong TanHorng-Sheng Yan
  • Applicant: PHISON ELECTRONICS CORP.
  • Priority: TW104123602 20150721
  • Main IPC: G06F3/06
  • IPC: G06F3/06
MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE
Abstract:
A memory management method, a memory control circuit unit and a memory storage device are provided. In an exemplary embodiment, the memory management method includes: receiving a first write command and first write data and obtaining a first number; programming the first write data and moving first storage data stored in a plurality of first physical programming units, where a total number of the first physical programming units conforms to the first number; receiving a second write command and second write data and obtaining a second number; programming the second write data and moving second storage data stored in a plurality of second physical programming units, where a total number of the second physical programming units conforms to the second number; and erasing at least one physical erasing unit. Accordingly, waste of system resource in the data merging procedure may be reduced.
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