Invention Grant
- Patent Title: Light emitting diode and flip-chip light emitting diode package
- Patent Title (中): 发光二极管和倒装芯片的发光二极管封装
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Application No.: US13687120Application Date: 2012-11-28
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Publication No.: US08829549B2Publication Date: 2014-09-09
- Inventor: Yi-Ru Huang , Chih-Ling Wu , Yu-Yun Lo , Po-Jen Su
- Applicant: Genesis Photonics Inc.
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics, Inc.
- Current Assignee: Genesis Photonics, Inc.
- Current Assignee Address: TW Tainan
- Agency: Rosenberg, Klein & Lee
- Priority: TW100145899A 20111213
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/60 ; H01L33/20 ; H01L33/44 ; H01L33/64 ; H01L33/38 ; H01L33/62 ; H01L33/40

Abstract:
A light emitting diode including a first doped layer, a light emitting layer, a second doped layer and a substrate is provided. A plurality of first grooves penetrate through the second doped layer and the light emitting layer. Thus, a partial surface of the first doped layer is exposed. At least one of the plurality of first grooves extends to edges of the second dope layer and the light emitting layer. An insulating layer is disposed over a part of second doped layer and extends to sidewalls of the first grooves. A first contact is set in the first grooves and electrically connected to the first doped layer. A second contact is set on the second doped layer and electrically connected to the second doped layer. By the first grooves, the first contact can be electrically connected to the first doped layer for improving current spreading.
Public/Granted literature
- US20130146915A1 LIGHT EMITTING DIODE AND FLIP-CHIP LIGHT EMITTING DIODE PACKAGE Public/Granted day:2013-06-13
Information query
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