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公开(公告)号：US20150179896A1
公开(公告)日：2015-06-25
申请号：US14576218
申请日：2014-12-19
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Po-Jen Su , Chih-Ling Wu , Shao-Ying Ting , Yi-Ru Huang , Yu-Yun Lo
CPC classification number: H01L33/486 , H01L33/62 , H01L2224/48091 , H01L2933/0066 , H01L2924/00014
Abstract: A package structure of light emitting diode includes a substrate and a light emitting diode die. The substrate has an upper surface and a lower surface opposite to each other. Two upper metal pads without mutual conduction are arranged on the upper surface. Two lower metal pads without mutual conduction are arranged on the lower surface. The light emitting diode die is disposed across the two upper metal pads. The light emitting diode die has a first electrode and a second electrode electrically connected to the two upper metal pads respectively. Wherein an orthographic projection area of one of the lower metal pads is greater than or equal to an orthographic projection area of the light emitting diode die, and the orthographic projection area of the light emitting diode die is totally located within the orthographic projection area of one of the lower metal pads.
Abstract translation: 发光二极管的封装结构包括衬底和发光二极管管芯。 基板具有彼此相对的上表面和下表面。 在上表面上设有两个不相互导电的上部金属焊盘。 在下表面上布置两个没有相互导电的下部金属焊盘。 发光二极管管芯设置在两个上部金属焊盘之间。 发光二极管管芯具有分别与两个上部金属焊盘电连接的第一电极和第二电极。 其中一个下部金属焊盘的正投影区域大于或等于发光二极管管芯的正投影区域，并且发光二极管管芯的正投影区域完全位于一个正交投影区域内 的下部金属垫。
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2.发明申请公开(公告)号：US20150179888A1
公开(公告)日：2015-06-25
申请号：US14576207
申请日：2014-12-19
Applicant: Genesis Photonics Inc.
Inventor： Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/382 , H01L33/486 , H01L33/505
Abstract: A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.
Abstract translation: 半导体发光结构包括外延结构，N型电极焊盘，P型电极焊盘和绝缘层。 N型电极焊盘和P型电极焊盘分开设置在外延结构上，其中P型电极焊盘具有第一上表面。 绝缘层设置在外延结构上并且位于N型电极焊盘和P型电极焊盘之间，其中绝缘层具有第二上表面。 P型电极焊盘的第一上表面和绝缘层的第二上表面是共面的。
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公开(公告)号：US10263156B2
公开(公告)日：2019-04-16
申请号：US15871891
申请日：2018-01-15
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.
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公开(公告)号：US20170005236A1
公开(公告)日：2017-01-05
申请号：US15264564
申请日：2016-09-13
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Shao-Ying Ting , Po-Jen Su , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
CPC classification number: H01L33/502 , H01L25/0753 , H01L33/486 , H01L33/504 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2933/0033
Abstract: A light emitting diode (LED) package includes at least one light emitting unit having a first electrode and a second electrode, a first molding compound covering a part of the light emitting unit to expose the first electrode and the second electrode, and a first light transmissive plate disposed on the first molding compound opposite the light emitting unit. A side surface of the first molding compound and a side surface of the first light transmissive plate are coplanar or have even adjoined edges.
Abstract translation: 发光二极管（LED）封装包括至少一个具有第一电极和第二电极的发光单元，覆盖发光单元的一部分以暴露第一电极和第二电极的第一模塑料和第一光 设置在与发光单元相对的第一模塑料上的透光板。 第一模塑料的侧表面和第一透光板的侧表面是共面的或具有相邻的边缘。
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公开(公告)号：US20150188000A1
公开(公告)日：2015-07-02
申请号：US14583210
申请日：2014-12-26
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Shao-Ying Ting , Po-Jen Su , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
CPC classification number: H01L33/502 , H01L25/0753 , H01L33/486 , H01L33/504 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2933/0033
Abstract: A light emitting diode (LED) package includes at least one light emitting unit having a first electrode and a second electrode, a first molding compound covering a part of the light emitting unit to expose the first electrode and the second electrode, and a first light transmissive plate disposed on the first molding compound opposite the light emitting unit. A side surface of the first molding compound and a side surface of the first light transmissive plate are coplanar or have even adjoined edges.
Abstract translation: 发光二极管（LED）封装包括至少一个具有第一电极和第二电极的发光单元，覆盖发光单元的一部分以暴露第一电极和第二电极的第一模塑料和第一光 设置在与发光单元相对的第一模塑料上的透光板。 第一模塑料的侧表面和第一透光板的侧表面是共面的或具有相邻的边缘。
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Patent Agency Ranking
公开(公告)号：US20150102377A1
公开(公告)日：2015-04-16
申请号：US14513215
申请日：2014-10-14
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Shao-Ying Ting , Chih-Ling Wu , Kuan-Yung Liao , Yi-Ru Huang , Yu-Yun Lo
CPC classification number: H01L33/505 , H01L33/486 , H01L33/50 , H01L33/54 , H01L33/58
Abstract: A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit.
Abstract translation: 倒装芯片发光二极管封装结构包括封装载体，导光单元和至少一个发光单元。 导光单元和发光单元设置在封装载体上，并且发光单元位于导光单元和封装载体之间。 导光单元的水平投影区域大于发光单元的水平投影区域。 发光单元适于发射光束，并且光束进入导光单元并且从导光单元的上表面离开发光单元发射。
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公开(公告)号：US20180138369A1
公开(公告)日：2018-05-17
申请号：US15871891
申请日：2018-01-15
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/405 , H01L33/42
Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.
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公开(公告)号：US20170084791A1
公开(公告)日：2017-03-23
申请号：US15365918
申请日：2016-11-30
Applicant: Genesis Photonics Inc.
Inventor： Yu-Yun Lo , Yi-Ru Huang , Chih-Ling Wu , Tzu-Yang Lin , Yun-Li Li
CPC classification number: H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2224/14 , H01L2933/0016
Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.
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9.发明授权公开(公告)号：US09431579B2
公开(公告)日：2016-08-30
申请号：US14576207
申请日：2014-12-19
Applicant: Genesis Photonics Inc.
Inventor： Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/382 , H01L33/486 , H01L33/505
Abstract: A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.
Abstract translation: 半导体发光结构包括外延结构，N型电极焊盘，P型电极焊盘和绝缘层。 N型电极焊盘和P型电极焊盘分开设置在外延结构上，其中P型电极焊盘具有第一上表面。 绝缘层设置在外延结构上并且位于N型电极焊盘和P型电极焊盘之间，其中绝缘层具有第二上表面。 P型电极焊盘的第一上表面和绝缘层的第二上表面是共面的。
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10.发明授权Light emitting diode device and flip-chip packaged light emitting diode device 有权发光二极管器件和倒装芯片封装的发光二极管器件公开(公告)号：US09196797B2
公开(公告)日：2015-11-24
申请号：US13661272
申请日：2012-10-26
Applicant: GENESIS PHOTONICS INC.
Inventor： Yu-Yun Lo , Yi-Ru Huang , Chih-Ling Wu , Tzu-Yang Lin , Yun-Li Li
CPC classification number: H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2224/14 , H01L2933/0016
Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.
Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。
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