Invention Grant
- Patent Title: Method and system of chemical bath deposition
- Patent Title (中): 化学浴沉积的方法和系统
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Application No.: US14186002Application Date: 2014-02-21
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Publication No.: US09433966B2Publication Date: 2016-09-06
- Inventor: Pei-Chen Tsai
- Applicant: TSMC Solar Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: B05C3/00
- IPC: B05C3/00 ; B05C11/00 ; B05C13/00 ; B05C11/10 ; B05C3/02 ; H01L31/18

Abstract:
An apparatus for chemical bath deposition includes a housing defining a chemical tank, a circulation pipe, and at least one flow adjustment device disposed inside the chemical tank. The chemical tank has an opening on a top surface and is configured to accept and hold at least one substrate inside the chemical tank. The circulation pipe has at least one portion inside the chemical tank, and is configured to supply at least one chemical to the chemical tank. The at least one flowing adjustment device includes any one of a turbine, a diffuser and a bubbler, or a combination thereof.
Public/Granted literature
- US20150239001A1 METHOD AND SYSTEM OF CHEMICAL BATH DEPOSITION Public/Granted day:2015-08-27
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