Invention Grant
- Patent Title: Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same
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Application No.: US14904042Application Date: 2014-07-02
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Publication No.: US09966439B2Publication Date: 2018-05-08
- Inventor: Masaya Oda , Toshimi Hitora , Tomohiro Yamaguchi , Tohru Honda
- Applicant: FLOSFIA INC.
- Applicant Address: JP Kyoto
- Assignee: FLOSFIA INC.
- Current Assignee: FLOSFIA INC.
- Current Assignee Address: JP Kyoto
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Priority: JP2013-144012 20130709; JP2013-218298 20131021
- International Application: PCT/JP2014/067715 WO 20140702
- International Announcement: WO2015/005202 WO 20150115
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C09K11/80 ; H01L29/24 ; C01G15/00 ; C30B29/16 ; C30B29/22 ; C30B25/18 ; C30B29/40 ; C30B25/02 ; H01L29/04 ; H01L29/12
Abstract:
A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.
Public/Granted literature
- US20160149005A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, CRYSTAL, AND MANUFACTURING METHOD FOR SAME Public/Granted day:2016-05-26
Information query
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