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1.发明申请SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, CRYSTAL, AND MANUFACTURING METHOD FOR SAME 有权半导体器件及其制造方法，用于其的晶体和制造方法公开(公告)号：US20160149005A1
公开(公告)日：2016-05-26
申请号：US14904042
申请日：2014-07-02
Applicant: FLOSFIA INC.
Inventor： Masaya Oda , Toshimi Hitora , Tomohiro Yamaguchi , Tohru Honda
CPC classification number: H01L29/24 , C01G15/00 , C01G15/006 , C01P2002/72 , C30B25/02 , C30B25/183 , C30B29/16 , C30B29/22 , C30B29/403 , H01L29/04 , H01L29/122
Abstract: A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.
Abstract translation: 提供了抑制刚玉结构氧化物晶体在高温下的相变的半导体器件或晶体。 根据本发明，提供一种半导体器件或晶体结构，其包括含有铟原子和镓原子中的一个或两者的刚玉结构氧化物晶体，其中氧化物晶体至少在晶体的晶格点之间的间隙中含有铝原子 格子。
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2.发明申请公开(公告)号：US20180226472A1
公开(公告)日：2018-08-09
申请号：US15945553
申请日：2018-04-04
Applicant: FLOSFIA INC.
Inventor： Masaya Oda , Toshimi Hitora , Tomohiro Yamaguchi , Tohru Honda
IPC: H01L29/24 , C30B29/16 , C01G15/00 , H01L29/04 , C30B29/40 , C30B29/22 , C30B25/18 , C30B25/02 , H01L29/12
CPC classification number: H01L29/24 , C01G15/00 , C01G15/006 , C01P2002/72 , C30B25/02 , C30B25/183 , C30B29/16 , C30B29/22 , C30B29/403 , H01L29/04 , H01L29/122
Abstract: A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.
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3.发明授权公开(公告)号：US09966439B2
公开(公告)日：2018-05-08
申请号：US14904042
申请日：2014-07-02
Applicant: FLOSFIA INC.
Inventor： Masaya Oda , Toshimi Hitora , Tomohiro Yamaguchi , Tohru Honda
IPC: H01L21/02 , C09K11/80 , H01L29/24 , C01G15/00 , C30B29/16 , C30B29/22 , C30B25/18 , C30B29/40 , C30B25/02 , H01L29/04 , H01L29/12
CPC classification number: H01L29/24 , C01G15/00 , C01G15/006 , C01P2002/72 , C30B25/02 , C30B25/183 , C30B29/16 , C30B29/22 , C30B29/403 , H01L29/04 , H01L29/122
Abstract: A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.
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