Abstract:
The invention relates to a method for producing a power semiconductor module (1), wherein a contact (40-43) is formed between a contact area (20-23) and a contact element (30-32) in the form of an ultrasound-welded contact, a sonotrode (50) used for the ultrasound welding process is also used for assembling the contact areas (20-23) with contact ends (33, 34) and, thereby for assembling contacts (40, 42) with base areas (F, F1-F3).
Abstract:
Vorgeschlagen wird ein Verfahren zum Herstellen eines Leistungshalbleitermoduls (1) , bei welchem ein Kontakt (40 - 43) zwischen einem Kontaktbereich (20 - 23) und einem Kontaktelement (30 - 32) als Ultraschallschweißkontakt ausgebildet wird, indem eine Sonotrode (50), die für den Ultraschallschweißvorgang verwendet wird, auch zum Fügen der Kontaktbereiche (20 - 22) mit den Kontaktenden (33, 34) und mithin zum Fügen der Kontakte (40, 42) und der Fußbereiche (F, Fl - F3) verwendet wird.
Abstract:
A method for structured application of a laminatable intermediate layer (9) to a substrate (1) for a semiconductor module, wherein a separating layer is indirectly or directly applied to said substrate (1) over a large surface, the intermediate layer (9) is applied to the substrate (1), including the separating layer(s), by means of lamination, over a large surface, the intermediate layer (9) is opened in places on said substrate (1), where recesses are provided for the intermediate layer (9), and the separating layer (8) is removed in said places.
Abstract:
A method and device is provided for thermal treatment of workpieces or components, in particular for producing a soldered joint between a solder material and at least one component or workpiece which is used as a carrier for said solder material, by melting of the solder material arranged on the solder material carrier. At least one component is heated in a melt chamber (12) in a process atmosphere which is sealed off from the environment. In a subsequent step the component is cooled in a cooling chamber (13) in a process atmosphere which is sealed off from the environment. The component is heated and cooled in process chamber (12, 13) which are independent of each other.