公开(公告)号：AU2013267481A1

公开(公告)日：2015-01-22

申请号：AU2013267481

申请日：2013-05-29

Applicant: COUTANT SOLENE ,  SEUTTER SEAN ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  SOLEXEL INC ,  KAPUR PAWAN ,  RATTLE BENJAMINE ,  DESHAZER HEATHER ,  DESHPANDE ANAND ,  MOSLEHI MEHRDAD ,  RANA VIRENDRA

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/04 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：EP2856512A4

公开(公告)日：2015-12-16

申请号：EP13798110

申请日：2013-05-29

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER DAWN ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2856512A1

公开(公告)日：2015-04-08

申请号：EP13798110.6

申请日：2013-05-29

Applicant: Solexel, Inc. ,  Deshpande, Anand ,  Kapur, Pawan ,  Rana, Virendra, V. ,  Moslehi, Mehrdad, M. ,  Seutter, Sean, M. ,  Deshazer, Heather Dawn ,  Kommera, Swaroop ,  Anbalagan, Pranav ,  Rattle, Benjamine, E. ,  Coutant, Solene

Inventor： DESHPANDE, Anand ,  KAPUR, Pawan ,  RANA, Virendra, V. ,  MOSLEHI, Mehrdad, M. ,  SEUTTER, Sean, M. ,  DESHAZER, Heather ,  KOMMERA, Swaroop ,  ANBALAGAN, Pranav ,  RATTLE, Benjamine, E. ,  COUTANT, Solene

IPC: H01L31/04 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

Abstract translation: 描述了与太阳能电池的多层金属化相关的制造方法和结构。 在一个实施例中，背接触太阳能电池包括具有衬底的衬底，所述衬底具有光接收前表面和用于形成图案化发射极和非嵌套基极区的背侧表面。 叉指掺杂的发射极和基极区形成在晶体半导体衬底的背侧表面上。 包括至少掺杂层和未掺杂盖层的组合的图案化电绝缘层堆叠形成在图案化的掺杂发射极区和基极区上。 形成包括接触发射极区的发射极金属化电极和接触基极区的非嵌套基极金属化电极的接触金属化图案，其中未嵌套的基础金属化电极被允许超出基极区以重叠所述图案的至少一部分 而不会在太阳能电池中引起电气分流。

公开(公告)号：WO2009052147A2

公开(公告)日：2009-04-23

申请号：PCT/US2008079943

申请日：2008-10-15

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  BRAUN DAVID M ,  BHOWMIK SIDDHARTHA ,  KOMMERA SWAROOP K ,  ORAM RICHARD J ,  ROURKE PHILIP G ,  SMITH JOSHUA W ,  ASCHOFF CHRISTOPHER C

Inventor： BRAUN DAVID M ,  BHOWMIK SIDDHARTHA ,  KOMMERA SWAROOP K ,  ORAM RICHARD J ,  ROURKE PHILIP G ,  SMITH JOSHUA W ,  ASCHOFF CHRISTOPHER C

CPC classification number: B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  Y10T29/49401

Abstract: Methods and an apparatus are disclosed, wherein a print head die includes a slot and ribs across the slot. The ribs are recessed from one or both sides of the die.

Abstract translation: 公开了一种方法和装置，其中打印头模具包括穿过狭槽的槽和肋。 肋从模具的一侧或两侧凹入。

公开(公告)号：WO2009025986A1

公开(公告)日：2009-02-26

申请号：PCT/US2008/072155

申请日：2008-08-04

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  KOMMERA, Swaroop K. ,  BHOWMIK, Siddhartha ,  ORAM, Richard, J. ,  RAMAMOORTHI, Sriram ,  BRAUN, David, M.

Inventor： KOMMERA, Swaroop K. ,  BHOWMIK, Siddhartha ,  ORAM, Richard, J. ,  RAMAMOORTHI, Sriram ,  BRAUN, David, M.

IPC: H01L21/302

CPC classification number: B81C1/00087 ,  B41J2/16 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B81B2201/052 ,  H01L21/76898

Abstract: A slot (18) is formed that reaches through a first side (21) of a silicon substrate (12) to a second side of the silicon substrate (12). A trench (15) is laser patterned. The trench (15) has a mouth at the first side (21) of the silicon substrate (12). The trench (15) does not reach the second side of the silicon substrate (12). the trench (15) is dry etched until a depth of at least a portion of the trench (15) is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot (18). the wet etch etches silicon from all surfaces of the trench (15).

Abstract translation: 形成了通过硅衬底（12）的第一侧（21）到达硅衬底（12）的第二侧的槽（18）。 激光图案的沟槽（15）。 沟槽（15）在硅衬底（12）的第一侧（21）处具有口。 沟槽（15）没有到达硅衬底（12）的第二侧。 干式蚀刻沟槽（15）直到沟槽（15）的至少一部分的深度大致延伸到硅衬底（12）的第二侧。 执行湿蚀刻以完成狭槽（18）的形成。 湿蚀刻从沟槽（15）的所有表面蚀刻硅。

公开(公告)号：WO2014179366A1

公开(公告)日：2014-11-06

申请号：PCT/US2014/035961

申请日：2014-04-29

Applicant: SOIEXEL, INC. ,  RANA, Virendra, V. ,  MOSLEHI, Mehrdad, M. ,  KAPUR, Pawan ,  BENJAMIN, Rattle ,  DESHAZER, Heather ,  COUTANT, Solene ,  KOMMERA, Swaroop

Inventor： RANA, Virendra, V. ,  MOSLEHI, Mehrdad, M. ,  KAPUR, Pawan ,  BENJAMIN, Rattle ,  DESHAZER, Heather ,  COUTANT, Solene ,  KOMMERA, Swaroop

IPC: H01L31/18 ,  H01L31/024 ,  H01L31/04

CPC classification number: H01L31/0682 ,  H01L21/268 ,  H01L21/324 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  Y02E10/547

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。

公开(公告)号：WO2010005434A1

公开(公告)日：2010-01-14

申请号：PCT/US2008/069570

申请日：2008-07-09

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  BHOWMIK, Siddhartha ,  KOMMERA, Swaroop K. ,  GIRI, Manish ,  BROWNING, Robert N.k. ,  SCHMIDT, Charles Gustav

Inventor： BHOWMIK, Siddhartha ,  KOMMERA, Swaroop K. ,  GIRI, Manish ,  BROWNING, Robert N.k. ,  SCHMIDT, Charles Gustav

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1601 ,  B41J2/14145 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634

Abstract: A print head die (30) includes slot ribs (41) having edges (62, 64) with triangular notches. In one embodiment, the print head die is formed by dry etching from a first side (50) of a wafer (30) a series of spaced openings (220) completely through the wafer (30) and separated by ribs (41) followed by wet etching the wafer (30) from a second opposite side (44) to recess the ribs (41) from the second side (44).

Abstract translation: 打印头模具（30）包括具有三角形凹口的边缘（62,64）的槽肋（41）。 在一个实施例中，打印头模具通过从晶片（30）的第一侧（50）干燥蚀刻而形成，所述第一侧（30）具有完全穿过晶片（30）的一系列间隔开的开口（220），并且被肋（41）隔开， 从第二相对侧（44）湿式蚀刻晶片（30）以将肋（41）从第二侧（44）凹入。

公开(公告)号：WO2009052147A3

公开(公告)日：2009-04-23

申请号：PCT/US2008/079943

申请日：2008-10-15

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  BRAUN, David M. ,  BHOWMIK, Siddhartha ,  KOMMERA, Swaroop K. ,  ORAM, Richard J. ,  ROURKE, Philip G. ,  SMITH, Joshua W. ,  ASCHOFF, Christopher C.

Inventor： BRAUN, David M. ,  BHOWMIK, Siddhartha ,  KOMMERA, Swaroop K. ,  ORAM, Richard J. ,  ROURKE, Philip G. ,  SMITH, Joshua W. ,  ASCHOFF, Christopher C.

IPC: B41J2/01 ,  B41J2/16

Abstract: Methods and an apparatus are disclosed, wherein a print head die includes a slot and ribs across the slot. The ribs are recessed from one or both sides of the die.

公开(公告)号：WO2014176380A1

公开(公告)日：2014-10-30

申请号：PCT/US2014/035209

申请日：2014-04-23

Applicant: SOLEXEL, INC. ,  KOMMERA, Swaroop ,  KAPUR, Pawan ,  SU, Yen-sheng ,  DESHPANDE, Anande ,  MOSLEHI, Mehrdad, M.

Inventor： KOMMERA, Swaroop ,  KAPUR, Pawan ,  SU, Yen-sheng ,  DESHPANDE, Anande ,  MOSLEHI, Mehrdad, M.

IPC: H01L31/0224 ,  H01L31/04

CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50

Abstract: An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (Ml) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M2) layer is connected to the first level metal (Ml) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M2). The substantially parallel interdigitated metallization of Ml collects carriers of opposite polarity of the corresponding busbar.

Abstract translation: 提供了交错的背接触太阳能电池。 太阳能电池包括具有光接收前侧的太阳能电池基板和包括基极和发射极区域的背面。 第一级金属（M1）层位于与基极和发射极区接触的衬底背面。 第二级金属（M2）层连接到第一级金属（M1）层，并且包括基极母线和发射极母线。 第一级金属包括位于第二级金属（M2）上的基极和发射极母线之下并对应于基本上正交叉指金属化的基本上平行的叉指金属化。 M1的基本上平行的叉指金属化收集相应母线相反极性的载体。

公开(公告)号：WO2013181298A1

公开(公告)日：2013-12-05

申请号：PCT/US2013/043193

申请日：2013-05-29

Applicant: SOLEXEL, INC. ,  DESHPANDE, Anand ,  KAPUR, Pawan ,  RANA, Virendra, V. ,  MOSLEHI, Mehrdad, M. ,  SEUTTER, Sean, M. ,  DESHAZER, Heather ,  KOMMERA, Swaroop ,  ANBALAGAN, Pranav ,  RATTLE, Benjamine, E. ,  COUTANT, Solene

Inventor： DESHPANDE, Anand ,  KAPUR, Pawan ,  RANA, Virendra, V. ,  MOSLEHI, Mehrdad, M. ,  SEUTTER, Sean, M. ,  DESHAZER, Heather ,  KOMMERA, Swaroop ,  ANBALAGAN, Pranav ,  RATTLE, Benjamine, E. ,  COUTANT, Solene

IPC: H01L31/04 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

Abstract translation: 描述与太阳能电池的多层金属化相关的制造方法和结构。 在一个实施例中，背接触太阳能电池包括具有具有光接收前侧表面的基板和用于形成图案化发射极和非嵌套基极区域的背面的基板。 交叉掺杂的发射极和基极区形成在晶体半导体衬底的背面上。 包括至少掺杂层和未掺杂覆盖层的组合的图案化电绝缘层堆叠形成在图案化的掺杂发射极和基极区上。 形成接触金属化图案，其包括接触发射极区域的发射极金属化电极和接触基极区域的非嵌套基底金属化电极，其中非嵌套基底金属化电极被允许超过基极区域以与所述图案化的至少一部分重叠 绝缘体，而不会在太阳能电池中造成电分路。