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公开(公告)号：KR1020130038161A
公开(公告)日：2013-04-17
申请号：KR1020120110547
申请日：2012-10-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/45536 , C23C16/45544 , C23C16/507 , H01J37/321 , H01J37/3211
Abstract: PURPOSE: A film forming apparatus and a substrate processing apparatus are provided to successively supply multiple types of process gas to a substrate and to perform a plasma process for uniformly processing the substrate at the same time. CONSTITUTION: A plasma generation part includes an antenna(44), a faraday shield(51), an insulating member(59), and a housing. The faraday shield is installed in the recess part(64) of the housing. The faraday shield includes a lower plate and a vertical plate(53). Slits(55) are formed in the lower plate of the faraday shield. The antenna changes gas for generating plasma into plasma by an induction coupling method. The antenna faces the substrate mounting surface of a rotation table(2).
Abstract translation: 目的：提供一种成膜装置和基板处理装置，以连续地向基板供给多种处理气体，并且同时执行用于均匀地处理基板的等离子体处理。 构成：等离子体产生部件包括天线（44），法拉第屏蔽（51），绝缘构件（59）和壳体。 法拉第屏蔽件安装在壳体的凹部（64）中。 法拉第屏蔽包括下板和垂直板（53）。 狭缝（55）形成在法拉第屏蔽的下板中。 天线通过感应耦合方法改变产生等离子体的气体。 天线面向旋转台（2）的基板安装表面。
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公开(公告)号：KR101509860B1
公开(公告)日：2015-04-07
申请号：KR1020120092242
申请日：2012-08-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02164 , C23C16/4554 , C23C16/45548 , C23C16/4585 , C23C16/4586 , H01J37/321 , H01J37/3244 , H01J37/32715 , H01L21/0228 , H01L21/0234
Abstract: 본발명은, 기판을수납하는진공용기와, 기판을적재하는기판적재영역이그 일면측에형성된적재대와, 플라즈마발생가스공급부와, 플라즈마발생용가스를유도결합에의해플라즈마화하기위해서세로방향의축의둘레에권회된안테나와, 상기안테나의주위에발생한전자기계에있어서의전계성분의통과를저지하기위해서접지된도전성의판형상체로이루어지는패러데이실드를구비하고, 상기패러데이실드는, 상기전자기계에있어서의자계성분을기판측으로통과시키는슬릿군과, 상기판형상체에있어서의상기슬릿군에둘러싸이는영역에개구하는, 플라즈마의발광상태확인용창부를구비하고, 상기창부와상기슬릿군 사이에는, 당해창부가상기슬릿에연통하지않도록, 접지된도전로가상기창부를둘러싸도록개재되고, 상기슬릿군에있어서의상기창부측과반대측의단부에는, 접지된도전로가당해슬릿군을둘러싸도록설치되어있는기판처리장치에관한것이다.
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公开(公告)号：KR1020130023114A
公开(公告)日：2013-03-07
申请号：KR1020120092242
申请日：2012-08-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02164 , C23C16/4554 , C23C16/45548 , C23C16/4585 , C23C16/4586 , H01J37/321 , H01J37/3244 , H01J37/32715 , H01L21/0228 , H01L21/0234
Abstract: PURPOSE: A film forming device, a substrate processing apparatus, and a plasma generating apparatus are provided to prevent an insulation breakdown of a gate oxide layer by installing a faraday shield of a conductive planar shape grounded between an antenna and a substrate. CONSTITUTION: A rotary table(2) is fixed to a cylindrical core part(21). A first process gas supply unit and a second process gas supply unit supplies a first process gas and a second process gas, respectively. A plasma generating gas supply unit supplies a plasma generating gas to a vacuum container(1). An antenna(83) faces a substrate loading region and changes the plasma generating gas to plasma by induction coupling. A faraday shield(95) is installed between the antenna and the substrate and includes a slit(97) arranged in a longitudinal direction of the antenna. [Reference numerals] (95) Faraday shield; (97) Slit
Abstract translation: 目的：提供一种成膜装置，基板处理装置和等离子体产生装置，以通过安装在天线和基板之间接地的导电平面形状的法拉第屏蔽来防止栅极氧化物层的绝缘击穿。 构成：旋转台（2）固定在圆筒形芯部（21）上。 第一处理气体供应单元和第二处理气体供应单元分别提供第一处理气体和第二处理气体。 等离子体产生气体供应单元将等离子体产生气体供应到真空容器（1）。 天线（83）面向衬底加载区域，并通过感应耦合将等离子体产生气体改变为等离子体。 法拉第屏蔽（95）安装在天线和基板之间，并且包括沿天线的纵向布置的狭缝（97）。 （附图标记）（95）法拉第屏蔽; （97）狭缝
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公开(公告)号：KR101560864B1
公开(公告)日：2015-10-15
申请号：KR1020120110547
申请日：2012-10-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/45536 , C23C16/45544 , C23C16/507 , H01J37/321 , H01J37/3211
Abstract: 회전테이블에있어서의기판적재영역측의면에플라즈마생성용가스를공급하는가스공급부와, 플라즈마생성용가스를유도결합에의해플라즈마화하기위해, 상기회전테이블의중앙부로부터외주부에걸쳐신장되도록당해회전테이블에있어서의기판적재영역측의면에대향하여설치된안테나를구비하도록장치를구성한다. 그리고상기안테나는, 상기기판적재영역에있어서의회전테이블의중앙부측과의이격거리가, 상기기판적재영역에있어서의회전테이블의외주부측과의이격거리보다도 3㎜이상커지도록배치한다.
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