Abstract:
PURPOSE: A quantum dot light emitting device and a manufacturing method thereof are provided to reduce manufacturing costs by forming a quantum light emitting layer and a charge transport layer by a solution process. CONSTITUTION: An anode(210) is formed in the top of a substrate. A quantum light-emitting layer(230) is formed on the anode and a charge transport particle and a quantum dot are mixed. A cathode is formed on the quantum light-emitting layer. A charge transport particle is an oxide nano particle. The diameter of a quantum dot is 2nm to 20nm. An electron-transport layer(240a) is composed an N-type semiconductor nano particle and is formed on the quantum light-emitting layer.
Abstract:
본 발명은 IGZO를 이용한 역구조 유기 태양전지 및 그 제조 방법을 제공한다. 역구조 유기 태양전지는 기판 상에 순차 적층된 제1 전극, 전자 추출층, 광활성층, 정공 추출층 및 제2 전극을 포함하고, 상기 전자 추출층은 인듐(In), 갈륨(Ga)을 도핑한 산화아연 선구체 용액을 졸젤 방법(sol-gel) 에 의해 형성한 금속 산화물 박막(IGZO) 인 것을 특징으로 한다. 본 발명에 따르면, 전력변환효율이 우수한 역구조 유기 태양전지를 제작할 수 있다.
Abstract:
본 발명은 역구조(inverted type)의 양자점 발광 소자를 적용하여, 용액 공정으로 진행하는 양자점 발광층의 형성 후 정공 수송층을 형성함으로써, 양자점 발광층으로의 유입이 용이한 정공 수송층 형성 재료의 선택이 자유로운 양자점 발광 소자 및 이를 이용한 디스플레이와 이들의 제조 방법에 관한 것으로, 본 발명의 양자점 발광 소자는 기판 상부에 형성된 음극;과, 상기 음극 상에 형성된 양자점 발광층; 및 상기 양자점 발광층 상에 형성된 양극을 포함하여 이루어진 것을 특징으로 한다.
Abstract:
The present invention relates to an organic solar cell to introduce an exciton blocking layer on both a hole extraction layer and an electron extraction layer and, more particularly, to an organic solar cell which is composed of hole and electron exciton blocking layers on two metal layers and a light absorption layer which is formed by a bulk heterojunction. Charges generated by light are smoothly moved by smoothing transporting the charges by simultaneously introducing a hole transport layer and an electron transport layer for an exciton blocking layer with a high charge transport property. If materials with a large energy level difference are used, the light conversion efficiency of the solar cell is improved by blocking a leakage current.
Abstract:
본 발명은 광흡수층 제작방법 및 이 광흡수층을 포함하는 반도체 소자의 제작방법에 관한 것으로, 일 실시예에 따르면, 기판 위에 반도체 나노입자 용액을 도포하여 나노입자 박막을 형성하는 단계; 나노입자간의 결합을 유도하기 위해, 형성된 상기 나노입자 박막을 적어도 1회 이상 열처리하는 단계; 및 상기 나노입자 박막에 광흡수재 용액을 도포하여 광흡수층을 형성하는 단계;를 포함하는 광흡수층의 제작 방법 및 이 광흡수층을 포함하는 반도체 소자의 제작 방법을 개시한다.
Abstract:
PURPOSE: A method for manufacturing a quantum dot element is provided to simplify the structure of a touch pad by inserting a quantum dot or an organic semiconductor absorbing infrared rays in around red, green, and blue pixels. CONSTITUTION: A display using a quantum dot light emitting diode comprises an organic compound or an inorganic semiconductor pixel(13). The organic compound or the inorganic semiconductor pixel absorbs infrared rays in around a luminous pixel. A quantum dot pixel absorbing the infrared ray is formed with a stamp method. An organic semiconductor absorbing the infrared rays is formed with one or more methods selected in a group consisting of a vapor deposit method, a screen printing method, an inkjet printing method, and a M-contact printing method.
Abstract:
PURPOSE: A method for forming multilayer thin firm of a colloid semiconductor nanoparticle is provided to laminate a semiconductor nanoparticle by reforming the surface of the semiconductor nanoparticle. CONSTITUTION: Nano particles(11) in which the surface is reformed are formed in a stamp(10). The nano particles formed in the stamp contact an element and gravitation between the nano particles is strengthened. A thin film is transferred. The nano particles are one or more species selected from a group consisting of a metal oxide or an II-VI group material, an III-V group material, an IV-IV group material, and an IV-VI group material.
Abstract:
PURPOSE: An organic solar cell and a manufacturing method thereof are provided to improve efficiency by adding forward voltage to both electrodes of the organic solar cell and turning on the electricity for predetermined time. CONSTITUTION: A diode is formed by sequentially arranging a substrate, an anode, a hole implant layer(12), a photoactive layer, a electron injection layer, and a cathode or sequentially arranging the substrate, the cathode, the electron injection layer, the photoactive layer, the hole implant layer, and the anode. The anode and the cathode are formed by ITO and AZO or metal, alloy, conductivity polymer, carbon nano-tube, and graphene. A photoactive layer(13) uses an organic compound of 30nm-300nm or inorganic synthesized material.
Abstract:
PURPOSE: A quantum dot light emitting diode device and a display using the same are provided to prevent a hole-transport layer from being solved in a solution by forming the hole-transport layer after a liquid solution process for forming the quantum dot light emitting diode. CONSTITUTION: In a quantum dot light emitting diode device and a display using the same, a cathode(310) is formed on a substrate(300). A quantum dot light-emitting layer(330) is formed on the cathode. An anode(350) is formed on the quantum dot light-emitting layer. An electron-transport layer(320) is formed between the cathode and the quantum dot light-emitting layer. A hole-transport layer(340) is formed between the quantum dot light-emitting layer and the anode.