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公开(公告)号：KR1020110092485A
公开(公告)日：2011-08-18
申请号：KR1020100011929
申请日：2010-02-09
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065
CPC classification number: H01L21/32137 , H01J37/32009 , H01J37/32357 , H01J37/32422 , H01L21/3065
Abstract: PURPOSE: An apparatus and method for etching an atomic layer are provided to etch the atomic layer with various material films by simultaneously removing reactive radical and surface materials of an etched layer using neutral beams. CONSTITUTION: A stage(50) which receives an etched substrate(51) is formed in a reactive chamber(80). A purge gas supply tube(70) is installed on one side of the reactive chamber to supply purge gas. A plasma generator(10) generates neutral beams and reactive radical. A shutter(20) controls the supply of the neutral beam and radical to the reactive chamber. A controller(40) controls the supply of the source gas and purge gas.
Abstract translation: 目的：提供用于蚀刻原子层的装置和方法，以通过使用中性光束同时去除蚀刻层的反应性基团和表面材料来蚀刻具有各种材料膜的原子层。 构成：在反应室（80）中形成接受蚀刻的基板（51）的台（50）。 吹扫气体供给管（70）安装在反应室的一侧以供应净化气体。 等离子体发生器（10）产生中性束和反应基。 快门（20）控制向反应室供应中性束和自由基。 控制器（40）控制源气体和净化气体的供应。
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公开(公告)号：KR1020080081873A
公开(公告)日：2008-09-10
申请号：KR1020080061416
申请日：2008-06-27
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065
CPC classification number: H01J37/32422 , H01L21/67069
Abstract: A neutral beam grid structure is provided to facilitate a micro-patterning process by maintaining a straightness of a neutral beam. An ion beam from an ion beam source(100) passes through a grid(200), which is located behind an ion source. Plural slits(300) are normally formed in a vertical direction on a surface of the grid. The slits are formed to be in a bar-like oval shape. A ratio of a diameter of the slit with respect to a hole size of the ion beam source lies between 1:0.3 and 1:0.5, such that a mechanical strength of the grid is increased. The number of slits formed on the grid is determined according to a grid size and a spacing between the grids.
Abstract translation: 提供中性束格栅结构以便通过维持中性光束的平直度来促进微图形化过程。 来自离子束源（100）的离子束通过位于离子源之后的栅格（200）。 多个狭缝（300）通常在网格的表面上沿垂直方向形成。 狭缝形成为棒状的椭圆形。 狭缝的直径相对于离子束源的孔尺寸的比率在1:0.3至1:0.5之间，使得网格的机械强度增加。 栅格上形成的狭缝的数量根据网格尺寸和网格之间的间距来确定。
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公开(公告)号：KR100857840B1
公开(公告)日：2008-09-10
申请号：KR1020070021853
申请日：2007-03-06
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065
CPC classification number: H01J37/321 , H01J37/32935
Abstract: A high-density plasma source and a controlling method thereof are provided to increase or decrease a size of a power electrode by forming a chamber with a conductive chamber. A conductive chamber(4) is used for forming a plasma generation space. A substrate is loaded on a lower part of the inside of the conductive chamber. An inductive coil(2) is installed in the inside or the outside of the conductive chamber. A power supply unit(6,7) generates plasma in the inside of the conductive chamber by applying RF power to at least one of the conductive chamber and the inductive coil. A control unit controls the power supply unit in order to control one of a gap between plasma sheaths formed in the inside of the conductive chamber or a profile. The power supply unit applies the power to each of plural regions of the conductive chamber.
Abstract translation: 提供高密度等离子体源及其控制方法，以通过形成具有导电室的室来增加或减小功率电极的尺寸。 导电室（4）用于形成等离子体产生空间。 衬底被装载在导电室的内部的下部。 感应线圈（2）安装在导电室的内部或外部。 电源单元（6,7）通过向导电室和感应线圈中的至少一个施加RF功率来在导电室的内部产生等离子体。 控制单元控制电源单元以控制形成在导电室内部的等离子体护套之间的间隙或者轮廓之一。 电源单元对导电室的多个区域中的每一个施加电力。
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公开(公告)号：KR100801614B1
公开(公告)日：2008-02-11
申请号：KR1020070022192
申请日：2007-03-06
Applicant: 성균관대학교산학협력단
IPC: H01L29/778 , H01L21/3065
CPC classification number: H01L29/66621 , H01L29/66462
Abstract: A gate recess etching method of an HEMT(High Electron Mobility Transistor) device is provided to improve etch selectivity by using a neutral beam using neon particles instead of argon particles. A loading process is performed to load an HEMT device to an inside of an etch chamber(S200). An absorbing process is performed to apply an etch gas to an etching target layer of the HEMT device by inputting the etch gas into the inside of the etch chamber(S210). An etch gas removal process is performed to remove the remaining etch gas(S220). An irradiation process is performed to irradiate a neutral beam onto the etching target layer of the HEMT device(S230). An etching residue removal process is performed to remove etching residues(S240). The energy of the neutral beam is maintained to be smaller than the bond strength of the etching target layer.
Abstract translation: 提供HEMT（高电子迁移率晶体管）器件的栅极凹槽蚀刻方法，以通过使用氖颗粒代替氩颗粒使用中性束来提高蚀刻选择性。 执行加载过程以将HEMT装置加载到蚀刻室的内部（S200）。 通过将蚀刻气体输入到蚀刻室的内部，执行吸收处理以将蚀刻气体施加到HEMT器件的蚀刻目标层（S210）。 执行蚀刻气体去除工艺以除去剩余的蚀刻气体（S220）。 执行照射处理以将中性束照射到HEMT装置的蚀刻目标层上（S230）。 进行蚀刻残留物去除处理以去除蚀刻残留物（S240）。 中性光束的能量保持小于蚀刻目标层的结合强度。
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Patent Agency Ranking
公开(公告)号：KR100866902B1
公开(公告)日：2008-11-04
申请号：KR1020070021847
申请日：2007-03-06
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065
Abstract: 본 발명은 중성 빔 식각장치에 관한 것으로서, 더욱 상세하게는 그리드에 형성되는 슬릿의 형태를 개선하여 전체 그리드 면적대비 높은 추출구 비율을 가지는 그리드 구조에 관한 것으로, 플라즈마로부터 이온 빔을 발생하는 이온소스로부터 발생된 이온 빔의 진행 경로상에 위치하여 이온 빔의 방향을 조절하는 복수개의 그리드를 포함하고, 상기 복수개의 그리드의 표면에는 각각 수직으로 다수개의 슬롯이 형성되어 있는 그리드 구조를 제공함으로써, 보다 높은 밀도의 이온을 추출할 수 있고, 그리드의 기계적 강도를 고려함으로서 쉽게 파손 되지 않으며, 변환되는 중성 빔의 직진성을 유지하도록 하여 미세 패턴 가공이 가능하도록 하는 효과가 있다.
이온 빔, 중성 빔, 그리드, 슬롯-
公开(公告)号：KR100813090B1
公开(公告)日：2008-03-17
申请号：KR1020070021854
申请日：2007-03-06
Applicant: 성균관대학교산학협력단
IPC: H01L21/205 , H01L21/3065 , H01L21/00
Abstract: A neutral beam source for processing a large area is provided to minimize the length of an induction coil by using a plurality of ICP(inductively coupled plasma) sources with independent loops as an ion source wherein the ICP source is linear in the space of a plasma generation chamber. An ion beam source includes a chamber(11), at least one induction coil part(13) of a linear type and a power supply part. The chamber forms a space for generating plasma wherein the lower end part of the chamber is connected to a grid(20) for extracting an ion beam from an ion beam source and accelerating the extracted ion beam. The induction coil part penetrates the inside of the chamber widthwise wherein both ends of the induction coil part are exposed to the outside of the lateral surface of the chamber. The power supply part applies RF power to one end of each induction coil part so as to generate plasma in the chambers. Each induction coil part includes an induction coil made of copper, stainless steel or aluminum and an insulation material surrounding the induction coil.
Abstract translation: 提供用于处理大面积的中性束源，以通过使用具有独立环路的多个ICP（电感耦合等离子体）源作为离子源来最小化感应线圈的长度，其中ICP源在等离子体的空间中是线性的 一代室。 离子束源包括室（11），至少一个线性类型的感应线圈部分（13）和电源部分。 室形成用于产生等离子体的空间，其中室的下端部分连接到栅格（20），用于从离子束源提取离子束并加速提取的离子束。 感应线圈部分宽度方向穿过腔室内部，其中感应线圈部分的两端暴露在腔室的侧表面的外侧。 电源部分将RF功率施加到每个感应线圈部分的一端，以在腔室中产生等离子体。 每个感应线圈部分包括由铜，不锈钢或铝制成的感应线圈和围绕感应线圈的绝缘材料。
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公开(公告)号：KR101080604B1
公开(公告)日：2011-11-04
申请号：KR1020100011929
申请日：2010-02-09
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065
CPC classification number: H01L21/32137 , H01J37/32009 , H01J37/32357 , H01J37/32422 , H01L21/3065
Abstract: 본발명은반응성라디칼및 중성빔을이용하는원자층식각장치및 이를이용한식각방법에관한것으로, 본발명의원자층식각장치는내부에피식각기판을안착할수 있는스테이지를구비하는반응챔버; 상기반응챔버로반응성라디칼및 중성빔을공급하며, 소스가스를공급받아플라즈마를발생시키는플라즈마챔버와, 상기플라즈마챔버외부를감싸면전기장을발생시키는유도코일과, 상기플라즈마챔버하부에위치하여이온빔을추출하는제 1, 제 2, 제 3 그리드로이루어지는그리드어셈블리와, 상기그리드어셈블리하부에서이온빔에전자를공급하여중성빔으로전환시키는반사체를포함하는플라즈마발생부; 상기플라즈마발생부와반응챔버의사이에설치되며, 상기반응챔버내로의중성빔의공급을조절하는셔터; 상기반응챔버내에퍼지가스를공급하는퍼지가스공급부; 및상기소스가스, 식각가스및 퍼지가스의공급을제어하며, 상기셔터의개폐를제어하는제어부를포함한다.
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公开(公告)号：KR1020080081596A
公开(公告)日：2008-09-10
申请号：KR1020070021847
申请日：2007-03-06
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065
CPC classification number: H01J37/32422
Abstract: A neutral beam grid structure is provided to enable processing of a fine pattern by maintaining straightness of a transformed neutral beam. A plurality of slits(300) are vertically formed on the surface of a grid(200) used in a neutral beam etching apparatus for extracting an ion beam. The plurality of slits can be separated from each by a predetermined interval. A reflector can be position at a predetermined angle to the lengthwise direction of the plurality of slits.
Abstract translation: 提供了一种中性光束格栅结构，以通过保持变换的中性光束的平直度来处理精细图案。 在用于提取离子束的中性光束蚀刻装置中使用的格栅（200）的表面上垂直地形成有多个狭缝（300）。 多个狭缝可以每隔一定间隔分开。 反射器可以位于与多个狭缝的长度方向成预定角度。
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公开(公告)号：KR100733844B1
公开(公告)日：2007-06-29
申请号：KR1020060026187
申请日：2006-03-22
Applicant: 성균관대학교산학협력단
IPC: H05H1/34
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