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公开(公告)号：KR101889920B1
公开(公告)日：2018-08-21
申请号：KR1020120151135
申请日：2012-12-21
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L51/50 , H01L31/042 , H01L31/18
CPC classification number: H01L51/442 , B82Y10/00 , H01L51/003 , H01L51/0036 , H01L51/0043 , H01L51/0047 , H01L51/4253 , Y02E10/549 , Y02P70/521
Abstract: 친수성고분자막을포함하는전사용스탬프의일면에친수성용액을코팅하여전사막을형성하는단계, 그리고기재위에상기전사막을전사하는단계를포함하는박막형성방법, 전자소자및 그제조방법에관한것이다.
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公开(公告)号：KR1020160114320A
公开(公告)日：2016-10-05
申请号：KR1020150040635
申请日：2015-03-24
Applicant: 성균관대학교산학협력단
IPC: C01B31/04 , H01L29/786 , H01L29/66
CPC classification number: C01B32/194 , H01L29/66477 , H01L29/786
Abstract: 그래핀의도핑방법에관한것이다.
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Patent Agency Ranking
公开(公告)号：KR1020140083081A
公开(公告)日：2014-07-04
申请号：KR1020120151135
申请日：2012-12-21
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L51/50 , H01L31/042 , H01L31/18
CPC classification number: H01L51/442 , B82Y10/00 , H01L51/003 , H01L51/0036 , H01L51/0043 , H01L51/0047 , H01L51/4253 , Y02E10/549 , Y02P70/521
Abstract: The present invention relates to a thin film forming method, an electronic device, and a manufacturing method thereof. The thin film forming method according to the embodiment of the present invention includes the steps of: forming a transfer layer by coating one side of a transfer stamp including a hydrophilic polymer layer with hydrophilic solutions; and transferring the transfer layer on a base material.
Abstract translation: 本发明涉及薄膜形成方法，电子装置及其制造方法。 根据本发明实施方式的薄膜形成方法包括以下步骤：通过用亲水溶液涂覆包括亲水性聚合物层的转印印模的一面来形成转印层; 并将转印层转印到基材上。
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公开(公告)号：KR1020130113229A
公开(公告)日：2013-10-15
申请号：KR1020120035653
申请日：2012-04-05
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01G23/00 , C01B33/06 , H01L31/042
CPC classification number: H01L31/02167 , C01B13/326 , C01G1/02 , C01G23/00 , C01G23/053 , C01P2002/82 , C01P2002/85 , C01P2006/40 , H01L51/422 , H01L51/4253 , H01L51/4273 , Y02E10/549
Abstract: PURPOSE: A hybrid metal oxide is provided to selectively control the mobility of the electric charge by applying in the intermediate layer with including a first metal, oxygen, and a part in which a second metal is connected with a covalent bond. CONSTITUTION: A hybrid metal oxide of a network structure comprises a first metal, oxygen, and a part in which a second metal is connected with a covalent bond. At least one of the first metal and the second metal has more than two oxidation states. The hybrid metal oxide is represented as below chemical formula 1. Chemical formula 1: M1O2-xM2Ox. In the chemical formula 1, M1 is the first metal, M2 is the second metal, and x satisfies 0.01
Abstract translation: 目的：提供混合金属氧化物以通过在中间层中施加包括第一金属，氧和第二金属与共价键连接的部分来选择性地控制电荷的迁移率。 构成：网络结构的杂化金属氧化物包含第一金属，氧和第二金属与共价键连接的部分。 第一金属和第二金属中的至少一种具有两个以上的氧化态。 杂化金属氧化物表示如下化学式1.化学式1：M1O2-xM2Ox。 在化学式1中，M1是第一种金属，M2是第二种金属，x满足0.01
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公开(公告)号：KR101880153B1
公开(公告)日：2018-07-20
申请号：KR1020120035653
申请日：2012-04-05
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01G23/00 , C01B33/06 , H01L31/042
CPC classification number: H01L31/02167 , C01B13/326 , C01G1/02 , C01G23/00 , C01G23/053 , C01P2002/82 , C01P2002/85 , C01P2006/40 , H01L51/422 , H01L51/4253 , H01L51/4273 , Y02E10/549
Abstract: 제1 금속, 산소및 제2 금속이공유결합으로연결되어있는부분을포함하는망목구조(network structure)를가지고상기제1 금속및 상기제2 금속중 적어도하나는둘 이상의산화상태(oxidation state)를가지는혼성금속산화물및 그형성방법과상기혼성금속산화물을포함하는태양전지에관한것이다.
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公开(公告)号：KR101711391B1
公开(公告)日：2017-03-02
申请号：KR1020150040635
申请日：2015-03-24
Applicant: 성균관대학교산학협력단
IPC: C01B31/04 , H01L29/786 , H01L29/66
Abstract: 그래핀의도핑방법에관한것이다.
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公开(公告)号：KR101556644B1
公开(公告)日：2015-10-01
申请号：KR1020140154687
申请日：2014-11-07
Applicant: 성균관대학교산학협력단
IPC: H01L29/786
CPC classification number: H01L29/7869
Abstract: 금속산화물트랜지스터및 상기금속산화물트랜지스터의제조방법에관한것이다.
Abstract translation: 金属氧化物晶体管及其制造方法技术领域本发明涉及金属氧化物晶体管及其制造方法。 金属氧化物晶体管包括基板（110），源极和漏极（120），栅电极（130），半导体层（140）和离子凝胶层（150）。
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