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    진동 센서 및 그 제조 방법
    1.
    发明公开
    진동 센서 및 그 제조 방법 有权
    振动传感器及制造传感器的方法

    公开(公告)号：KR1020090039750A

    公开(公告)日：2009-04-22

    申请号：KR1020097002569

    申请日：2007-07-20

    Applicant: 오므론 가부시키가이샤

    Inventor： 카사이타카시 ,  호리모토야스히로 ,  카토후미히토 ,  무네치카마사키 ,  와카바야시슈이치 ,  타카하시토시유키 ,  이누가마사유키

    IPC: H01L29/84 ,  H01L21/306 ,  H04R19/04

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

    Abstract: A protective film (20) of an SiO2 thin film is formed on a front surface of an Si substrate (12), and a part of the protective film (20) is removed to form an etching window (22). A sacrifice layer (23) of polycrystalline Si is formed in the etching window (22). A protective film (24) of SiO2 is formed on the front surface of the Si substrate (12) from the top of the sacrifice layer (23), and a thin film (13) as an element formed of polycrystalline Si is further formed on the protective film (24). A backside etching window (26) is opened in a protective film (21) on the back side of the Si substrate (12). The Si substrate (12) is soaked in TMAH to perform crystal anisotropic etching in the Si substrate (12) through the backside etching window (26) to provide a through-hole (14) in the Si substrate (12). When the sacrifice layer (23) is exposed to the interior of the through-hole (14), the sacrifice layer (23) is etching-removed to provide a gap (19) between the protective film (24) and the Si substrate (12) and crystal anisotropic etching of the Si substrate (12) is carried out from its front side and backside.

    Abstract translation: 在Si衬底（12）的前表面上形成SiO 2薄膜的保护膜（20），并且去除保护膜（20）的一部分以形成蚀刻窗口（22）。 在蚀刻窗（22）中形成多晶Si的牺牲层（23）。 在牺牲层（23）的顶部的Si衬底（12）的前表面上形成SiO 2的保护膜（24），并且作为由多晶Si形成的元件的薄膜（13）还形成在 保护膜（24）。 在Si衬底（12）的背侧上的保护膜（21）中打开背面蚀刻窗（26）。 Si衬底（12）浸泡在TMAH中，通过背面蚀刻窗（26）在Si衬底（12）中进行晶体各向异性蚀刻，以在Si衬底（12）中提供通孔（14）。 当牺牲层（23）暴露于通孔（14）的内部时，牺牲层（23）被蚀刻去除，以在保护膜（24）和Si衬底（24）之间提供间隙（19） 12）和Si衬底（12）的晶体各向异性蚀刻从其正面和背面进行。

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