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公开(公告)号：KR100421800B1
公开(公告)日：2004-03-10
申请号：KR1020010017301
申请日：2001-04-02
IPC: H01L21/324
Abstract: PURPOSE: A method for fabricating a zinc oxide semiconductor is provided to improve an electric characteristic by activating a dopant included in a zinc oxide layer. CONSTITUTION: A zinc oxide layer including a dopant is deposited on a silicon substrate or a sapphire substrate. In order to from an n type zinc oxide semiconductor, the dopant selected from a group of Al, In, Ga, and B or an oxide including Al, In, Ga, and B is added to the zinc oxide layer. In order to from a p type zinc oxide semiconductor, the dopant selected from a group of Li, Na, K, N, P, As, and Ni or an oxide including Li, Na, K, N, P, As, and Ni is added to the zinc oxide. The substrate including the zinc oxide layer is loaded into a thermal processing reactor. The dopant of the zinc oxide layer is activated by performing the thermal process for the zincs oxide layer under atmosphere of one element selected from H, O, N, Ar, NO, N2O, and NO2 gas.
Abstract translation: 目的：提供一种用于制造氧化锌半导体的方法，以通过激活包含在氧化锌层中的掺杂剂来改善电特性。 构成：包括掺杂剂的氧化锌层沉积在硅衬底或蓝宝石衬底上。 为了从n型氧化锌半导体中将选自Al，In，Ga和B的组中的掺杂剂或包含Al，In，Ga和B的氧化物添加到氧化锌层中。 为了从p型氧化锌半导体中选择Li，Na，K，N，P，As，Ni或包含Li，Na，K，N，P，As和Ni的氧化物的掺杂剂， 添加到氧化锌中。 将包含氧化锌层的基材装载到热处理反应器中。 通过在选自H，O，N，Ar，NO，N 2 O和NO 2气体中的一种元素的气氛下对锌氧化物层执行热处理来活化氧化锌层的掺杂剂。
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公开(公告)号：KR100377509B1
公开(公告)日：2003-03-26
申请号：KR1020000047355
申请日：2000-08-17
IPC: H01L21/205
Abstract: PURPOSE: A plasma treatment process for improving an ohmic contact characteristic of a zinc oxide semiconductor is to provide low specific contact resistivity and an excellent optical characteristic by a simplified method, and to prevent the capacity of the semiconductor from being deteriorated by omitting a high heat treatment process. CONSTITUTION: A substrate on which the zinc oxide semiconductor is deposited is settled on a susceptor in a reaction chamber. Plasma including hydrogen is formed in the reaction chamber to expose the surface of the zinc oxide semiconductor to the plasma. The plasma including the hydrogen further includes one selected from an inert gas group composed of He, Ne, Ar, Kr, Xe and Rn, or mixture gas including at least one of the inert gas group.
Abstract translation: 目的：用于改善氧化锌半导体的欧姆接触特性的等离子体处理工艺是通过简化的方法提供低比接触电阻率和优异的光学特性，并且通过省略高热来防止半导体的容量劣化 治疗过程。 构成：沉积氧化锌半导体的衬底沉积在反应室中的基座上。 包含氢的等离子体在反应室中形成以将氧化锌半导体的表面暴露于等离子体。 包括氢的等离子体还包括从由He，Ne，Ar，Kr，Xe和Rn组成的惰性气体组中选择的一种或者包括至少一种惰性气体组的混合气体。
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公开(公告)号：KR1020020014201A
公开(公告)日：2002-02-25
申请号：KR1020000047355
申请日：2000-08-17
IPC: H01L21/205
Abstract: PURPOSE: A plasma treatment process for improving an ohmic contact characteristic of a zinc oxide semiconductor is to provide low specific contact resistivity and an excellent optical characteristic by a simplified method, and to prevent the capacity of the semiconductor from being deteriorated by omitting a high heat treatment process. CONSTITUTION: A substrate on which the zinc oxide semiconductor is deposited is settled on a susceptor in a reaction chamber. Plasma including hydrogen is formed in the reaction chamber to expose the surface of the zinc oxide semiconductor to the plasma. The plasma including the hydrogen further includes one selected from an inert gas group composed of He, Ne, Ar, Kr, Xe and Rn, or mixture gas including at least one of the inert gas group.
Abstract translation: 目的：改善氧化锌半导体的欧姆接触特性的等离子体处理方法是通过简化的方法提供低比接触电阻率和优异的光学特性，并且通过省略高热来防止半导体的劣化 治疗过程。 构成：将沉积有氧化锌半导体的基板沉积在反应室中的基座上。 在反应室中形成包括氢的等离子体，以将氧化锌半导体的表面暴露于等离子体。 包括氢的等离子体还包括选自由He，Ne，Ar，Kr，Xe和Rn组成的惰性气体组中的一种或包含至少一种惰性气体组的混合气体。
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公开(公告)号：KR1020020077557A
公开(公告)日：2002-10-12
申请号：KR1020010017301
申请日：2001-04-02
IPC: H01L21/324
Abstract: PURPOSE: A method for fabricating a zinc oxide semiconductor is provided to improve an electric characteristic by activating a dopant included in a zinc oxide layer. CONSTITUTION: A zinc oxide layer including a dopant is deposited on a silicon substrate or a sapphire substrate. In order to from an n type zinc oxide semiconductor, the dopant selected from a group of Al, In, Ga, and B or an oxide including Al, In, Ga, and B is added to the zinc oxide layer. In order to from a p type zinc oxide semiconductor, the dopant selected from a group of Li, Na, K, N, P, As, and Ni or an oxide including Li, Na, K, N, P, As, and Ni is added to the zinc oxide. The substrate including the zinc oxide layer is loaded into a thermal processing reactor. The dopant of the zinc oxide layer is activated by performing the thermal process for the zincs oxide layer under atmosphere of one element selected from H, O, N, Ar, NO, N2O, and NO2 gas.
Abstract translation: 目的：提供一种制造氧化锌半导体的方法，以通过激活包含在氧化锌层中的掺杂剂来改善电特性。 构成：包含掺杂剂的氧化锌层沉积在硅衬底或蓝宝石衬底上。 为了从n型氧化锌半导体中，将选自Al，In，Ga和B的掺杂剂或包含Al，In，Ga和B的氧化物添加到氧化锌层中。 为了从ap型氧化锌半导体，选自Li，Na，K，N，P，As和Ni中的掺杂剂或包含Li，Na，K，N，P，As和Ni的氧化物是 加入到氧化锌中。 将包含氧化锌层的基板装载到热处理反应器中。 通过在选自H，O，N，Ar，NO，N 2 O和NO 2气体中的一种元素的气氛下进行氧化锌层的热处理来激活氧化锌层的掺杂剂。
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Patent Agency Ranking
公开(公告)号：KR1020020014202A
公开(公告)日：2002-02-25
申请号：KR1020000047356
申请日：2000-08-17
IPC: H01L21/3065
Abstract: PURPOSE: A method for dry-etching a zinc oxide is provided to obtain a higher etch rate as compared with a conventional wet-etch method, to improve an optical characteristic of a thin film by using a hydrogen passivation effect and to improve an isotropic etch characteristic by controlling radio frequency(RF) power. CONSTITUTION: A substrate on which a zinc oxide is deposited is settled on a susceptor in a reaction chamber. Gas including methane is supplied to the inside of the reaction chamber to generate plasma. The zinc oxide is dry-etched by using the plasma. The gas including the methane further includes hydrogen or argon.
Abstract translation: 目的：提供一种用于干法蚀刻氧化锌的方法，以获得比常规湿式蚀刻方法更高的蚀刻速率，通过使用氢钝化效应来改善薄膜的光学特性并改善各向同性蚀刻 通过控制射频（RF）功率的特性。 构成：将沉积有氧化锌的基板沉积在反应室中的基座上。 包括甲烷在内的气体被供应到反应室的内部以产生等离子体。 通过使用等离子体对氧化锌进行干式蚀刻。 包括甲烷在内的气体还包括氢或氩。
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公开(公告)号：KR100343949B1
公开(公告)日：2002-07-24
申请号：KR1020000003690
申请日：2000-01-26
Applicant: 한국과학기술연구원
Abstract: 본 발명은 종래의 Ⅲ-Ⅴ족 화합물인 GaN를 대체하기 위하여 상온에서 딥-레벨 발광이 전혀 없고 단지 NBE만이 관측될 수 있는 양질의 ZnO 박막을 제조하기 위한 경제적으로 저렴한 방법 및 그를 위한 장치를 제공하기 위하여, 진공 챔버내로 소정 비율의 Ar, O
2 가스를 1 내지 500 mTorr 이하의 챔버내 진공도를 유지하도록 도입하고, 기판을 예열하고, 기판 위에 설치되는 원자 라디칼원으로부터 C 및 N을 도입하면서 RF 마그네트론 스퍼터링법으로 기판 위에 ZnO 단결정 박막을 증착한 후, 상기 ZnO 박막 증착시 사용하였던 챔버내 산소 분압을 유지하면서 상기 기판을 서냉시키는 상온에서 작동하는 자외선 수광, 발광 소자용 ZnO 박막의 제조방법 및 그를 위한 장치를 제공한다.-
公开(公告)号：KR1020010102794A
公开(公告)日：2001-11-16
申请号：KR1020000024465
申请日：2000-05-08
IPC: H01L33/14
Abstract: 본 발명은 청색 및 녹색 발광다이오드(LED: Blue/Green Light Emitting Diode) 및 레이저다이오드(LD: laser diode)와 같은 광전자소자의 제작에 핵심 기술인 고품위 산화아연(ZnO) 산화물 반도체 박막 제조 방법에 관한 것이다.
본 발명은 최근 차세대 발광다이오드용 물질로 각광 받고 있는 산화아연(ZnO) 산화물 반도체를 기존의 단순한 성장조건 변화에 따른 박막제조 방법이 아닌 특정가스 분위기 하에서 후 열처리(post-growth annealing treatment)를 시행함으로써 전기적, 구조적, 광학적 특성이 우수한 산화아연박막을 제조하는 것을 특징으로 한다. 따라서, 본 발명은, 스퍼터 시스템(sputter system)으로 반에피텍시 박막을 성장시키고 이 박막을 고온의 산소분위기 하에서 열처리하여 그레인(grain) 재배열을 유도함으로써 구조적 특성을 향상시켰으며, 산소분위기 열처리에 의한 산소 주입으로 산화아연 박막내의 산소공공(vacancy)을 줄여줌으로써 전기적, 광학적 특성이 우수한 박막을 구현할 수 있다.-
公开(公告)号：KR1020010076504A
公开(公告)日：2001-08-16
申请号：KR1020000003690
申请日：2000-01-26
Applicant: 한국과학기술연구원
CPC classification number: C23C14/34 , C23C14/0047 , C23C14/086 , C30B23/02 , C30B29/16
Abstract: PURPOSE: A method for manufacturing ZnO film for an infrared light receiving and emitting device operated at normal temperature and an apparatus therefor are provided to replace GaN by manufacturing ZnO film at lower costs. CONSTITUTION: The method for manufacturing ZnO film for the infrared light receiving and emitting device operated at normal temperature includes following steps. At first, a gas including Ar and O2 gases at predetermined ratio in a vacuum chamber to maintain the vacuum level lower than 1 to 500mTorr. Then, the substrate is pre-heated. At third, C and N are induced from an atom radicals implemented on the substrate and a ZnO single crystal film is vaporized on the substrate(3) by using an RF magnetron sputtering method. At third, the partial pressure of the oxygen in the chamber used while vaporizing ZnO film is maintained while the substrate is cooled down slowly. The Ar/O2 ratio is much less than 4/1. Alternatively, the Ar/O2 ratio is much less than 4/1.
Abstract translation: 目的：提供一种用于制造在常温下工作的红外光接收和发射装置的ZnO膜的方法及其装置，以较低成本制造ZnO膜来代替GaN。 构成：在常温下工作的红外光接收和发射装置的ZnO膜的制造方法包括以下步骤。 首先，在真空室中以预定比例包括Ar和O 2气体的气体以保持真空度低于1至500mTorr。 然后，将衬底预热。 第三，通过使用RF磁控溅射法，在基板上实现的原子自由基诱导C和N，并在基板（3）上蒸发ZnO单晶膜。 第三，在使衬底缓慢冷却的同时保持在蒸镀ZnO膜时使用的室中的氧的分压。 Ar / O2比值远低于4/1。 或者，Ar / O 2比远小于4/1。
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公开(公告)号：KR100403191B1
公开(公告)日：2003-10-23
申请号：KR1020000024465
申请日：2000-05-08
IPC: H01L33/14
Abstract: 본 발명은 청색 및 녹색 발광다이오드(LED: Blue/Green Light Emitting Diode) 및 레이저다이오드(LD: laser diode)와 같은 광전자소자의 제작에 핵심 기술인 고품위 산화아연(ZnO) 산화물 반도체 박막 제조 방법에 관한 것이다.
본 발명은 최근 차세대 발광다이오드용 물질로 각광 받고 있는 산화아연(ZnO) 산화물 반도체를 기존의 단순한 성장조건 변화에 따른 박막제조 방법이 아닌 특정가스 분위기 하에서 후 열처리(post-growth annealing treatment)를 시행함으로써 전기적, 구조적, 광학적 특성이 우수한 산화아연박막을 제조하는 것을 특징으로 한다. 따라서, 본 발명은, 스퍼터 시스템(sputter system)으로 반에피텍시 박막을 성장시키고 이 박막을 99.9%이상의 고순도 산소분위기 하에서 고온 열처리하여 그레인(grain) 재배열을 유도함으로써 구조적 특성을 향상시켰으며, 산소분위기 열처리에 의한 산소 주입으로 산화아연 박막내의 산소공공(vacancy)을 줄여줌으로써 전기적, 광학적 특성이 우수한 박막을 구현할 수 있다.
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