-
公开(公告)号：KR1020020077557A
公开(公告)日：2002-10-12
申请号：KR1020010017301
申请日：2001-04-02
IPC: H01L21/324
Abstract: PURPOSE: A method for fabricating a zinc oxide semiconductor is provided to improve an electric characteristic by activating a dopant included in a zinc oxide layer. CONSTITUTION: A zinc oxide layer including a dopant is deposited on a silicon substrate or a sapphire substrate. In order to from an n type zinc oxide semiconductor, the dopant selected from a group of Al, In, Ga, and B or an oxide including Al, In, Ga, and B is added to the zinc oxide layer. In order to from a p type zinc oxide semiconductor, the dopant selected from a group of Li, Na, K, N, P, As, and Ni or an oxide including Li, Na, K, N, P, As, and Ni is added to the zinc oxide. The substrate including the zinc oxide layer is loaded into a thermal processing reactor. The dopant of the zinc oxide layer is activated by performing the thermal process for the zincs oxide layer under atmosphere of one element selected from H, O, N, Ar, NO, N2O, and NO2 gas.
Abstract translation: 目的：提供一种制造氧化锌半导体的方法，以通过激活包含在氧化锌层中的掺杂剂来改善电特性。 构成：包含掺杂剂的氧化锌层沉积在硅衬底或蓝宝石衬底上。 为了从n型氧化锌半导体中，将选自Al，In，Ga和B的掺杂剂或包含Al，In，Ga和B的氧化物添加到氧化锌层中。 为了从ap型氧化锌半导体，选自Li，Na，K，N，P，As和Ni中的掺杂剂或包含Li，Na，K，N，P，As和Ni的氧化物是 加入到氧化锌中。 将包含氧化锌层的基板装载到热处理反应器中。 通过在选自H，O，N，Ar，NO，N 2 O和NO 2气体中的一种元素的气氛下进行氧化锌层的热处理来激活氧化锌层的掺杂剂。
-
公开(公告)号：KR100421800B1
公开(公告)日：2004-03-10
申请号：KR1020010017301
申请日：2001-04-02
IPC: H01L21/324
Abstract: PURPOSE: A method for fabricating a zinc oxide semiconductor is provided to improve an electric characteristic by activating a dopant included in a zinc oxide layer. CONSTITUTION: A zinc oxide layer including a dopant is deposited on a silicon substrate or a sapphire substrate. In order to from an n type zinc oxide semiconductor, the dopant selected from a group of Al, In, Ga, and B or an oxide including Al, In, Ga, and B is added to the zinc oxide layer. In order to from a p type zinc oxide semiconductor, the dopant selected from a group of Li, Na, K, N, P, As, and Ni or an oxide including Li, Na, K, N, P, As, and Ni is added to the zinc oxide. The substrate including the zinc oxide layer is loaded into a thermal processing reactor. The dopant of the zinc oxide layer is activated by performing the thermal process for the zincs oxide layer under atmosphere of one element selected from H, O, N, Ar, NO, N2O, and NO2 gas.
Abstract translation: 目的：提供一种用于制造氧化锌半导体的方法，以通过激活包含在氧化锌层中的掺杂剂来改善电特性。 构成：包括掺杂剂的氧化锌层沉积在硅衬底或蓝宝石衬底上。 为了从n型氧化锌半导体中将选自Al，In，Ga和B的组中的掺杂剂或包含Al，In，Ga和B的氧化物添加到氧化锌层中。 为了从p型氧化锌半导体中选择Li，Na，K，N，P，As，Ni或包含Li，Na，K，N，P，As和Ni的氧化物的掺杂剂， 添加到氧化锌中。 将包含氧化锌层的基材装载到热处理反应器中。 通过在选自H，O，N，Ar，NO，N 2 O和NO 2气体中的一种元素的气氛下对锌氧化物层执行热处理来活化氧化锌层的掺杂剂。
-
公开(公告)号：KR100402200B1
公开(公告)日：2003-10-17
申请号：KR1020010003412
申请日：2001-01-20
Applicant: 한국과학기술연구원
IPC: H01J37/30
Abstract: PURPOSE: A gas cluster ion accelerator is provided to generate gas cluster by using adiabatic expansion and readily adjust acceleration energy of gas cluster. CONSTITUTION: A gas cluster ion accelerator comprises a cluster generating unit, an ionizing unit(32), a lens unit(52), a cluster measuring unit(36), an accelerating unit(54) and scanning units(56,58). The cluster generating unit jets gas from high pressure to low pressure under adiabatic expansion condition to convert the gas to cluster state. The ionizing unit(32) ionizes the cluster from the cluster generating unit. The lens part(52) adjusts focus of the ionized cluster from the ionizing unit(32). The cluster measuring unit(36) measures size of the ionized cluster from the lens part(52). The accelerating unit accelerates the ionized cluster. The scanning units(56,58) scan the accelerated ionized cluster from the accelerating unit(54) onto a target(75).
Abstract translation: 用途：提供气体团簇离子加速器，利用绝热膨胀产生气体团簇，随时调整气体团簇的加速能量。 本发明公开了一种气体团簇离子加速器，包括团簇生成单元，电离单元32，透镜单元52，簇测量单元36，加速单元54和扫描单元56,58。 气体发生单元在绝热膨胀条件下将气体从高压喷射到低压，以将气体转化为团簇状态。 电离单元（32）使簇生成单元的簇离子化。 透镜部分（52）调整来自电离单元（32）的电离簇的焦点。 簇测量单元（36）测量来自透镜部分（52）的电离簇的尺寸。 加速单元加速电离簇。 扫描单元（56,58）将加速离子化簇从加速单元（54）扫描到目标（75）上。
-
公开(公告)号：KR100376137B1
公开(公告)日：2003-03-15
申请号：KR1020000077156
申请日：2000-12-15
Applicant: 한국과학기술연구원
IPC: H02N2/00
CPC classification number: H02N2/163 , H02N2/0065
Abstract: The present invention relates to a ring-type piezoelectric ultrasonic motor that is different from the electro-magnetically driven conventional motors and that has applications in robots and automation equipments. More specifically, the present invention relates to a ring-type piezoelectric ultrasonic motor that is driven by a frictional force between rotor and stator, and stator is produced a mechanical displacement by a piezoelectric ceramics applying an alternate electric field with an ultrasonic frequency (above 16 kHz).
Abstract translation: 环形压电超声波马达技术领域本发明涉及与电磁驱动的传统马达不同的环形压电超声波马达，并且该环形压电超声波马达具有在机器人和自动化设备中的应用。 更具体地说，本发明涉及一种由转子和定子之间的摩擦力驱动的环形压电超声波马达，并且定子通过施加具有超声波频率的交变电场的压电陶瓷产生机械位移（超过16 千赫）。
-
公开(公告)号：KR100356640B1
公开(公告)日：2002-10-18
申请号：KR1020000001092
申请日：2000-01-11
Applicant: 한국과학기술연구원
IPC: C04B35/491 , H01L41/187
Abstract: 본 발명은 Pb(Al
1/2 Nb
1/2 )O
3 -Pb(Zr,Ti)O
3 (PAN-PZT) 압전 세라믹 조성물에 첨가물인 Nb
2 O
5 가 첨가되어 있거나, 또는 Nb
2 O
5 와 MnO
2 가 첨가되어 있어 유전율 (K
33
T ), 전기기계 결합계수 (k
p ) 및 압전상수 (d
33 )가 높을 뿐만 아니라 기계적 품질계수 (Q
m )도 큰 압전재료용 산화물 조성물에 관한 것이다.-
Patent Agency Ranking
公开(公告)号：KR1020020036125A
公开(公告)日：2002-05-16
申请号：KR1020000066143
申请日：2000-11-08
Applicant: 한국과학기술연구원
IPC: H01L33/02
Abstract: PURPOSE: A ZnO/Si heterojunction photodiode is provided to simply embody a photodiode through a single deposition process of a ZnO thin film by using the ZnO thin film as a visible ray transmission window, and to increase quantum efficiency by 50 percent through a thickness control of the ZnO thin film and crystallinity. CONSTITUTION: A heterojunction photodiode includes a silicon substrate and a zinc oxide layer formed on the silicon substrate. The silicon substrate is of a p-type conductivity type, and the zinc oxide layer is of an n-type conductivity type. The zinc oxide layer has an energy band gap of 3.1-3.2 electron-volt.
Abstract translation: 目的：提供ZnO / Si异质结光电二极管，通过使用ZnO薄膜作为可见光透射窗，通过ZnO薄膜的单次沉积工艺实现光电二极管，并通过厚度控制将量子效率提高了50％ 的ZnO薄膜和结晶度。 构成：异质结光电二极管包括形成在硅衬底上的硅衬底和氧化锌层。 硅衬底为p型导电型，氧化锌层为n型导电型。 氧化锌层的能带隙为3.1-3.2电子伏特。
-
公开(公告)号：KR100329807B1
公开(公告)日：2002-03-25
申请号：KR1019990032789
申请日：1999-08-10
Applicant: 한국과학기술연구원
IPC: G01N27/30
Abstract: 본발명은반도성을갖는세라믹물질의박·후막을이용한가스감지소자에관한것으로서, 특히전극의배열방법을변화시켜센싱특성을증진시킨박·후막형반도체식가스감지소자에관한것이다. 본발명의목적은가스센싱의정확도를향상시키고재현성있는전극을제공함과아울러회복속도및 응답특성을향상시키고자하는데있다. 본발명은기판(1)과, 상기기판상면에소정의패턴으로형성되는하부전극(2')과, 상기하부전극이형성된기판의상면에형성되는박·후막형반도성물질감지막(3)과, 상기감지막상면에소정의패턴으로형성되는상부전극(2')과, 상기기판하면에형성되는히터(4)와, 상기히터가형성된기판의하면에형성되는절연재(5)로이루어지는가스센서를제공한다. 본발명의바람직한실시예에따르면, 상기상·하부전극(2', 2')은 I자형태를가진다. 또한, 상기상·하부전극은박막또는후막형태로이루어지고, 상기상부전극(2')과하부전극(2')은다른재질로이루어질수 있다.
-
公开(公告)号：KR100316586B1
公开(公告)日：2002-02-28
申请号：KR1019960011994
申请日：1996-04-19
Applicant: 한국과학기술연구원
Abstract: PURPOSE: Provided are a method for modifying a polymer surface, which decrease a contact angle of the polymer surface, or increase adhesiveness of the polymer surface, and a material having surface modified by the method. CONSTITUTION: The method comprises directly blowing a reactive gas selected from oxygen, nitrogen, hydrogen, ammonia, carbon monooxide, and a mixture thereof on the polymer surface, and then irradiating an ion particle having energy of 0.5-2.5 KeV to the polymer surface to decrease a contact angle or increase an adhesion in the polymer surface. The amount of blown gas is 1-8 ml/min. The polymer is selected from polycarbonate, polymethylmethacrylate, polyimide, teflon, polyvinylidene fluoride, polyethylene terephthalate, polyethylene, and silicone rubber.
-
公开(公告)号：KR100307806B1
公开(公告)日：2001-11-30
申请号：KR1019980057666
申请日：1998-12-23
Applicant: 주식회사 삼양홀딩스 , 한국과학기술연구원
IPC: C08J7/00
Abstract: 본 발명은 이온빔을 이용하여 친수성으로 표면개질된 고분자 멤브레인 및 그 표면 개질방법에 관한 것으로, 고분자 멤브레인 표면으로, 반응성 기체를 유입시키면서 2000 eV 이하의 에너지를 가진 이온빔을 조사시킴으로써 상기 이온빔으로 고분자 멤브레인의 표면을 활성화시키면서 활성화된 고분자 멤브레인의 표면과 상기 반응성 기체를 반응시켜 그 표면에 친수성기를 형성시키는 고분자 멤브레인의 표면개질 방법과 그에 의해 표면개질된 고분자 멤브레인을 제공한다.
-
公开(公告)号：KR1020010068942A
公开(公告)日：2001-07-23
申请号：KR1020000001092
申请日：2000-01-11
Applicant: 한국과학기술연구원
IPC: C04B35/491 , H01L41/187
CPC classification number: H01L41/1876 , C04B35/493
Abstract: PURPOSE: An oxide composition for piezo-electric material is provided for obtaining superior dielectric coefficient K33T, electrical-mechanical combination factor kp and piezo-electric constant d33 and excellent mechanical quality factor Qm of the composition by adding specific oxides such as Nb2O3 or Nb2O5 and MnO2. CONSTITUTION: The composition has the formula of 0.05(Al(1/2)Nb(1/2))O3 - 0.494PbZrO3 - 0.456PbTiO3 + mNb2O5 (wherein m represents 0.1 to 1.0 wt based on total weight of the composition) or the other formula of 0.05(Al(1/2)Nb(1/2))O3 - 0.494PbZrO3 - 0.456PbTiO3 + mNb2O5 + nMnO2 (wherein m represents 0.6 to 0.9 wt and n represents 0.3 to 0.8 wt. based on total weight of the composition). The composition is prepared by general combination procedure to add Nb2O5 or Nb2O5 and MnO2 into PZT three-base materials composition.
Abstract translation: 目的：提供一种用于压电材料的氧化物组合物，通过添加诸如Nb 2 O 3或Nb 2 O 5的特定氧化物，获得优异的介电系数K33T，机电组合因子kp和压电常数d33以及优异的机械品质因子Qm， 二氧化锰。 组成：该组合物具有0.05（Al（1/2）Nb（1/2））O3-0.494PbZrO3-0.456PbTiO3 + mNb2O5（其中m表示基于组合物的总重量为0.1至1.0wt）或式 0.05（Al（1/2）Nb（1/2））O3 - 0.494PbZrO3 - 0.456PbTiO3 + mNb2O5 + nMnO2（其中m表示0.6〜0.9重量％，n表示0.3〜0.8重量％ 组成）。 通过一般组合方法制备组合物，将Nb2O5或Nb2O5和MnO2添加到PZT三基材料组成中。
-
-
-
-
-
-
-
-
-
Search Results
206
records
(took 0.024 seconds)
