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公开(公告)号：KR101731497B1
公开(公告)日：2017-04-28
申请号：KR1020150082816
申请日：2015-06-11
Applicant: 한국과학기술연구원
IPC: H01L31/0236 , H01L31/0392 , H01L21/3065 , H01L21/3105
CPC classification number: Y02E10/50
Abstract: 본발명은반도체기판상에저융점금속을증착하는단계, 상기저융점금속이증착된기판을건식에칭하는단계및 상기건식에칭된기판으로부터상기금속을제거하는단계를포함하는반도체기판의텍스쳐링방법, 이방법에따라제조된반도체기판및 이를포함하는태양전지를제공한다. 본발명에따르면경제적이고, 풀웨이퍼(full wafer) 스케일의대면적응용이가능한반도체기판의텍스쳐링방법을제공할수 있고, 이렇게제조된반도체기판의경우광흡수율이우수하며초박형태양전지에적용이가능하다.
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公开(公告)号：KR1020070102066A
公开(公告)日：2007-10-18
申请号：KR1020060033717
申请日：2006-04-13
Applicant: 한국과학기술연구원
IPC: C23C14/48
CPC classification number: C23C14/20
Abstract: A method for depositing the metal thin films on the polymer based materials is provided to improve interface adhesion between the deposited metal thin films by executing a process of high flux ion irradiation having hundreds of beam energy before depositing the metal thin films. A method for depositing the metal thin films on the polymer based materials comprises a first step of washing the surface of the polymer based materials by injecting a metal ion generated from a high flux metallic ion source(10) applying high voltage while having hundreds of beam energy onto the polymer based materials; a second step of modifying the surface of the polymer based materials by the carbonization effect of the polymer surface through elastic scatter between the metal ion and the polymer atom of the polymer based materials; a third step of forming a metallic ion injection layer on the surface of the modified polymer based materials through a continuous injection of the metal ion; and a fourth step of depositing the metal thin films on the metallic ion injection layer.
Abstract translation: 提供了一种在基于聚合物的材料上沉积金属薄膜的方法，以通过在沉积金属薄膜之前执行具有数百束能量的高通量离子辐照的方法来改善沉积的金属薄膜之间的界面粘附。 将金属薄膜沉积在基于聚合物的材料上的方法包括：通过注入从施加高电压的高通量金属离子源（10）产生的金属离子同时具有数百束的方式来洗涤基于聚合物的材料的表面的第一步骤 能量聚合物基材料; 通过聚合物表面的金属化作用，通过金属离子和聚合物基材料的聚合物原子之间的弹性散射来改性聚合物基材料的表面的第二步骤; 通过连续注入金属离子在改性聚合物基材料的表面上形成金属离子注入层的第三步骤; 以及在金属离子注入层上沉积金属薄膜的第四步骤。
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3.发明公开
公开(公告)号：KR1020070078191A
公开(公告)日：2007-07-31
申请号：KR1020060008217
申请日：2006-01-26
Applicant: 한국과학기술연구원
Abstract: A photo device epitaxial layer of a lattice-matched InGaAs/InGaAsP multiple-quantum-well structure and a method of manufacturing the same are provided to maximize the wavelength shift of band gap by optimizing a quantum well intermixing process. An n-InP lower cladding layer is formed on a substrate. An active layer is formed on the n-InP lower cladding layer. The active layer is composed of InGaAs well layers and InGaAsP barrier layers alternately stacked each other. A p-InP upper cladding layer and an InGaAs electrode layer are sequentially formed on the resultant structure. An InP protection layer is formed on the InGaAs electrode layer to prevent the contamination of an upper surface of the InGaAs electrode layer and the generation of vacancy due to the deviation of Ga from the InGaAs electrode layer.
Abstract translation: 提供晶格匹配的InGaAs / InGaAsP多量子阱结构的光器件外延层及其制造方法，通过优化量子阱混合处理来最大化带隙的波长偏移。 在衬底上形成n-InP下包层。 在n-InP下包层上形成有源层。 有源层由彼此交替堆叠的InGaAs阱层和InGaAsP势垒层组成。 在所得结构上依次形成p-InP上覆层和InGaAs电极层。 在InGaAs电极层上形成InP保护层，以防止InGaAs电极层的上表面被污染，并且由于Ga与InGaAs电极层的偏移而产生空位。
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公开(公告)号：KR100375595B1
公开(公告)日：2003-03-15
申请号：KR1020000046213
申请日：2000-08-09
Applicant: 한국과학기술연구원
IPC: H01L29/872
Abstract: PURPOSE: A method for forming a high voltage Schottky diode is provided to increase a breakdown voltage, by performing an ion implantation process in a self-aligned method to carry out an edge termination. CONSTITUTION: A metal layer pattern is formed on a silicon substrate(110). Ions are implanted into the silicon substrate by using the meal layer pattern as an ion implantation mask. Boron ions are used in the ion implantation process. The silicon substrate has an N-type conductivity. The metal layer pattern is composed of gold.
Abstract translation: 目的：提供一种形成高压肖特基二极管的方法，以通过以自对准方法执行离子注入工艺来执行边缘端接来增加击穿电压。 构成：在硅衬底（110）上形成金属层图案。 通过使用膳食层图案作为离子注入掩模将离子注入到硅衬底中。 硼离子用于离子注入过程。 硅衬底具有N型导电性。 金属层图案由金组成。
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公开(公告)号：KR100336407B1
公开(公告)日：2002-05-10
申请号：KR1020000041408
申请日：2000-07-19
Applicant: 한국과학기술연구원
IPC: H01M10/38
Abstract: 본 발명은 리튬 이온 전지의 전해질로 이용되는 LiPON 박막의 원료인 박막 전지를 위한 전해질용 리튬인산염 스퍼터링 타겟 제조 방법에 관한 것으로, 리튬인산염 분말을 600∼950℃의 온도 범위에서 하소 처리하는 단계와; 상기 단계에서 하소 처리된 분말을 분쇄하는 단계와; 상기 단계에서 분쇄된 분말을 압축 성형하는 단계와; 상기 단계에서 압축 성형된 성형체를 500∼1500℃의 온도 범위에서 소결 처리하는 단계를 포함하여 이루어진다.
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Patent Agency Ranking
公开(公告)号：KR1020020012942A
公开(公告)日：2002-02-20
申请号：KR1020000046213
申请日：2000-08-09
Applicant: 한국과학기술연구원
IPC: H01L29/872
Abstract: PURPOSE: A method for forming a high voltage Schottky diode is provided to increase a breakdown voltage, by performing an ion implantation process in a self-aligned method to carry out an edge termination. CONSTITUTION: A metal layer pattern is formed on a silicon substrate(110). Ions are implanted into the silicon substrate by using the meal layer pattern as an ion implantation mask. Boron ions are used in the ion implantation process. The silicon substrate has an N-type conductivity. The metal layer pattern is composed of gold.
Abstract translation: 目的：提供一种用于形成高电压肖特基二极管的方法，以通过以自对准方式执行离子注入工艺来实现边缘终止来增加击穿电压。 构成：在硅衬底（110）上形成金属层图案。 通过使用餐层图案作为离子注入掩模将离子注入到硅衬底中。 硼离子用于离子注入工艺。 硅衬底具有N型导电性。 金属层图案由金组成。
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公开(公告)号：KR1020160146126A
公开(公告)日：2016-12-21
申请号：KR1020150082816
申请日：2015-06-11
Applicant: 한국과학기술연구원
IPC: H01L31/0236 , H01L31/0392 , H01L21/3065 , H01L21/3105
CPC classification number: Y02E10/50
Abstract: 본발명은반도체기판상에저융점금속을증착하는단계, 상기저융점금속이증착된기판을건식에칭하는단계및 상기건식에칭된기판으로부터상기금속을제거하는단계를포함하는반도체기판의텍스쳐링방법, 이방법에따라제조된반도체기판및 이를포함하는태양전지를제공한다. 본발명에따르면경제적이고, 풀웨이퍼(full wafer) 스케일의대면적응용이가능한반도체기판의텍스쳐링방법을제공할수 있고, 이렇게제조된반도체기판의경우광흡수율이우수하며초박형태양전지에적용이가능하다.
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公开(公告)号：KR101626369B1
公开(公告)日：2016-06-01
申请号：KR1020140046189
申请日：2014-04-17
Applicant: 한국과학기술연구원
Abstract: 본발명의시료주입기(10)는제1 내부공간을가지는몸체(15); 상기몸체(15)의일측단부에연결되고시료가적재되는제2 내부공간을가지는튜브(14); 상기제1 내부공간에서이동및 정지가가능한압축바(11); 및상기압축바(11)에연결되어, 상기압축바(11)의이동에따라제2 내부공간의부피를변화시킬수 있도록제2 내부공간에서이동및 정지가가능한플런저(13);을포함한다. 또한, 상기시료주입기(10)를사용하여, 시료를주입하는방법을제공한다. 이를통하여미량의시료를간단하게포집할수 있고, 시료를포집하는시간이저울을사용하는것에비하여 10배이상단축시킬수 있는등의효과를얻을수 있다.
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公开(公告)号：KR1020150120212A
公开(公告)日：2015-10-27
申请号：KR1020140046189
申请日：2014-04-17
Applicant: 한국과학기술연구원
Abstract: 본발명의시료주입기(10)는제1 내부공간을가지는몸체(15); 상기몸체(15)의일측단부에연결되고시료가적재되는제2 내부공간을가지는튜브(14); 상기제1 내부공간에서이동및 정지가가능한압축바(11); 및상기압축바(11)에연결되어, 상기압축바(11)의이동에따라제2 내부공간의부피를변화시킬수 있도록제2 내부공간에서이동및 정지가가능한플런저(13);을포함한다. 또한, 상기시료주입기(10)를사용하여, 시료를주입하는방법을제공한다. 이를통하여미량의시료를간단하게포집할수 있고, 시료를포집하는시간이저울을사용하는것에비하여 10배이상단축시킬수 있는등의효과를얻을수 있다.
Abstract translation: 本发明的样品注射器（10）包括：具有第一内部空间的主体（15）; 连接到所述主体（15）的一个端部并且具有第二内部空间的管（14），所述第二内部空间中装载有样品; 能够在第一内部空间中移动和停止的压缩杆（11）; 以及连接到所述压缩杆（11）并且能够在所述第二内部空间中移动和停止以根据所述压缩杆（11）的移动来改变所述第二内部空间的体积的柱塞（13）。 此外，本发明提供了一种通过使用样品注射器（10）注入样品的方法。 因此，可以容易地收集少量的样品，并且收集样品的时间可以比使用刻度减少十倍。
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